位置:DS1225Y-170-IND > DS1225Y-170-IND详情

DS1225Y-170-IND中文资料

厂家型号

DS1225Y-170-IND

文件大小

80.83Kbytes

页面数量

8

功能描述

64K Nonvolatile SRAM

数据手册

下载地址一下载地址二到原厂下载

生产厂商

DALLAS

DS1225Y-170-IND数据手册规格书PDF详情

DESCRIPTION

The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and writeprotection is unconditionally enabled to prevent data corruption. The NV SRAM can be used in place of existing 8k x 8 SRAMs directly conforming to the popular bytewide 28-pin DIP standard.

FEATURES

10 years minimum data retention in the absence of external power

Data is automatically protected during power loss

Directly replaces 2k x 8 volatile static RAM or EEPROM

Unlimited write cycles

Low-power CMOS

JEDEC standard 28-pin DIP package

Read and write access times as fast as 150 ns

Full ±10 operating range

Optional industrial temperature range of

-40°C to +85°C, designated IND

DS1225Y-170-IND产品属性

  • 类型

    描述

  • 型号

    DS1225Y-170-IND

  • 制造商

    DALLAS

  • 制造商全称

    Dallas Semiconductor

  • 功能描述

    64K Nonvolatile SRAM

更新时间:2025-11-27 10:34:00
供应商 型号 品牌 批号 封装 库存 备注 价格
DALLAS
24+
DIP
6980
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16+
DIP-28
12
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99+
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350
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22+
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受权代理!全新原装现货特价热卖!
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绝对全新原装!100%保质量特价!请放心订购!
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MOD
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全新原装环保