CERAMIC SURFACE MOUNT MULTI - LAYER

文件：458.31 Kbytes Page：9 Pages

DS RELAYS

文件：92.91 Kbytes Page：6 Pages

Higher cutting ability, better cutting quality

文件：476.04 Kbytes Page：2 Pages

150W A OC IP66/IP67 Driver with 440Vac Protection

Features InputOverVoltageProtectionat440Vacwith48Hours FullPoweratWideOutputCurrentRange(ConstantPower) AdjustableOutputCurrent(AOC)withPotentiometer Non-dimmingControl InputSurgeProtection:DM4kV,CM6kV All-AroundProtection:IOVP,OVP,SCP,OTP IP66

Future Technology Devices International Ltd FT231X

[FutureTechnologyDevicesInternationalLimited] TheFT231XisaUSBtofullhandshakeserialUARTinterfacedevicewhichsimplifiesUSBimplementationsandreducesexternalcomponentcountbyfullyintegratinganMTPmemory,andanintegratedclockcircuitwhichrequiresnoexternalcrystal

Future Technology Devices International Ltd.

1TypicalApplications ConnectingAndroidphonestoUSBaccessories ConnectingAndroidtabletstoUSBaccessories ControllinginstrumentationfromAndroiddevices. HomeautomationviaAndroiddevices DataloggingfromUSBaccessories ConnectingserialprintingdevicestoAndroi

1Mx16 bit Uni-Transistor Random Access Memory

1Mx16bitUni-TransistorCMOSRAM GENERALDESCRIPTION TheK1S161611AisfabricatedbySAMSUNG¢sadvancedCMOStechnologyusingonetransistormemorycell.ThedevicesupportsIndustrialtemperaturerangeand48ballChipScalePackageforuserflexibilityofsystemdesign.Thedevicealsosupp

1M x 16 SDRAM

GENERALDESCRIPTION TheK4S161622Dis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

1M x 16 SDRAM

GENERALDESCRIPTION TheK4S161622Eis16,777,216bitssynchronoushighdatarateDynamicRAMorganizedas2x524,288wordsby16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepos

64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

GENERALDESCRIPTION TheK6F1016U4CfamiliesarefabricatedbySAMSUNG¢sadvancedfullCMOSprocesstechnology.Thefamiliessupportindustrialtemperaturerangeand48ballChipScalePackageforuserflexibilityofsystemdesign.Thefamiliesalsosupportlowdataretentionvoltageforbatteryb

256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

GENERALDESCRIPTION TheK6F2008U2EfamiliesarefabricatedbySAMSUNG¢sadvancedFullCMOSprocesstechnology.Thefamiliessupportvariousoperatingtemperaturerangesandhavevariouspackagetypesforuserflexibilityofsystemdesign.Thefamiliesalsosupportslowdataretentionvoltagefor

128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

GENERALDESCRIPTION TheK6F2016U4EfamiliesarefabricatedbySAMSUNG¢sadvancedfullCMOSprocesstechnology.Thefamiliessupportindustrialtemperaturerangeand48ballChipScalePackageforuserflexibilityofsystemdesign.Thefamiliesalsosupportlowdataretentionvoltageforbatteryb

2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

GENERALDESCRIPTION TheK6F3216T6MfamiliesarefabricatedbySAMSUNG¢sadvancedfullCMOSprocesstechnology.Thefamiliessupportindustrialoperatingtemperaturerangesandhavechipscalepackageforuserflexibilityofsystemdesign.Thefamiliesalsosupportlowdataretentionvoltageforb

256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM

GENERALDESCRIPTION TheK6F4016U6GfamiliesarefabricatedbySAMSUNG¢sadvancedfullCMOSprocesstechnology.Thefamiliessupportindustrialtemperaturerangeand48ballChipScalePackageforuserflexibilityofsystemdesign.Thefamilyalsosupportslowdataretentionvoltageforbatteryba

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

GENERALDESCRIPTION TheK6F8016U6BfamiliesarefabricatedbySAMSUNG¢sadvancedfullCMOSprocesstechnology.Thefamiliessupportindustrialoperatingtemperaturerangesandhavechipscalepackageforuserflexibilityofsystemdesign.Thefamiliesalsosupportlowdataretentionvoltageforb

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

GENERALDESCRIPTION TheK6F8016U6CfamiliesarefabricatedbySAMSUNG¢sadvancedfullCMOSprocesstechnology.Thefamiliessupportindustrialoperatingtemperaturerangesandhavechipscalepackageforuserflexibilityofsystemdesign.Thefamiliesalsosupportlowdataretentionvoltageforb

1Mx8 bit Low Power and Low Voltage CMOS Static RAM

GENERALDESCRIPTION TheK6X8008C2BfamiliesarefabricatedbySAMSUNG¢sadvancedfullCMOSprocesstechnology.Thefamiliessupportvariousoperatingtemperaturerangeforuserflexibilityofsystemdesign.Thefamiliesalsosupportlowdataretentionvoltageforbatteryback-upoperationwithlo

CMOS SRAM

GENERALDESCRIPTION TheK6X8008T2BfamiliesarefabricatedbySAMSUNG¢sadvancedfullCMOSprocesstechnology.Thefamiliessupportvariousoperatingtemperaturerangeforuserflexibilityofsystemdesign.Thefamiliesalsosupportlowdataretentionvoltageforbatteryback-upoperationwithlo

64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM

GENERALDESCRIPTION TheK6X8016C3BfamiliesarefabricatedbySAMSUNG¢sadvancedfullCMOSprocesstechnology.Thefamiliessupportvariousoperatingtemperaturerangeforuserflexibilityofsystemdesign.Thefamiliesalsosupportlowdataretentionvoltageforbatteryback-upoperationwithlo

256Kx36 & 512Kx18 Synchronous SRAM

GENERALDESCRIPTION TheK7A803600BandK7A801800Bare9,437,184-bitSynchronousStaticRandomAccessMemorydesignedforhighperformancesecondlevelcacheofPentiumandPowerPCbasedSystem. FEATURES •SynchronousOperation. •2StagePipelinedoperationwith4Burst. •On-ChipAddressCo

256Kx36 & 512Kx18-Bit Synchronous Burst SRAM

GENERALDESCRIPTION TheK7B803625BandK7B801825Bare9,437,184-bitSynchronousStaticRandomAccessMemorydesignedforhighperformancesecondlevelcacheofPentiumandPowerPCbasedSystem. FEATURES •SynchronousOperation. •On-ChipAddressCounter. •Self-TimedWriteCycle. •On-Chip

1Mx36 & 2Mx18 Flow-Through NtRAM

GENERALDESCRIPTION TheK7N323601MandK7N321801Mare37,748,736-bitsSynchronousStaticSRAMs. TheNtRAMTM,orNoTurnaroundRandomAccessMemoryutilizesallthebandwidthinanycombinationofoperatingcycles. Address,datainputs,andallcontrolsignalsexceptoutputenableandlinearbur

512Kx36 & 1Mx18 Pipelined NtRAM

GENERALDESCRIPTION TheK7N163601AandK7N161801Aare18,874,368-bitsSynchronousStaticSRAMs. TheNtRAMTM,orNoTurnaroundRandomAccessMemoryutilizesallthebandwidthinanycombinationofoperatingcycles.Address,datainputs,andallcontrolsignalsexceptoutputenableandlinearburs

1Mx36 & 2Mx18-Bit Pipelined NtRAM

GENERALDESCRIPTION TheK7N323601MandK7N321801Mare37,748,736-bitsSynchronousStaticSRAMs. TheNtRAMTM,orNoTurnaroundRandomAccessMemoryutilizesallthebandwidthinanycombinationofoperatingcycles. Address,datainputs,andallcontrolsignalsexceptoutputenableandlinearbur

256Kx36 & 512Kx18-Bit Pipelined NtRAM

GENERALDESCRIPTION TheK7N803601BandK7N801801Bare9,437,184bitsSynchronousStaticSRAMs.TheNtRAMTM,orNoTurnaroundRandomAccessMemoryutilizesallthebandwidthinanycombinationofoperatingcycles.Address,datainputs,andallcontrolsignalsexceptoutputenableandlinearburst

256Kx36 & 512Kx18-Bit Pipelined NtRAMTM

GENERALDESCRIPTION TheK7N803601BandK7N801801Bare9,437,184bitsSynchronousStaticSRAMs.TheNtRAMTM,orNoTurnaroundRandomAccessMemoryutilizesallthebandwidthinanycombinationofoperatingcycles.Address,datainputs,andallcontrolsignalsexceptoutputenableandlinearburst

1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM

FEATURES •1.8V+0.1V/-0.1VPowerSupply. •DLLcircuitryforwideoutputdatavalidwindowandfuture freguencyscaling. •I/OSupplyVoltage1.5V+0.1V/-0.1Vfor1.5VI/O, 1.8V+0.1V/-0.1Vfor1.8VI/O. •Separateindependentreadandwritedataports withconcurrentreadandwrite

64M x 8 Bit NAND Flash Memory

GeneralDescription TheK9F1208U0Misa64M(67,108,864)x8bitNANDFlashMemorywithaspare2,048K(2,097,152)x8bit.ItsNANDcellprovidesthemostcost-effectivesolutionforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200msonthe528-bytepageandaner

64M x 8 Bit NAND Flash Memory

GENERALDESCRIPTION TheK9K1208U0Aarea64M(67,108,864)x8bitNANDFlashMemorywithaspare2,048K(2,097,152)x8bit.ItsNANDcellprovidesthemostcost-effectivesolutionforthesolidstatemassstoragemarket.Aprogramoperationprogramsthe528-bytepageintypically200msandaneraseope

PC133/PC100 Unbuffered DIMM

GENERALDESCRIPTION TheSamsungM366S2953MTSisa64Mbitx64SynchronousDynamicRAMhighdensitymemorymodule.TheSamsungM366S2953MTSconsistsofsixteenCMOS64Mx8bitwith4banksSynchronousDRAMsinTSOP-II400milpackageanda2KEEPROMin8-pinTSSOPpackageona168-pinglass-epoxy

256MB DDR SDRAM MODULE

GENERALDESCRIPTION TheSamsungM368L3223DTLis32Mbitx64DoubleDataRateSDRAMhighdensitymemorymodules.TheSamsungM368L3223DTLconsistsofeightCMOS32Mx8bitwith4banksDoubleDataRateSDRAMsin66pinTSOP-II(400mil)packagesmountedona184pinglass-epoxysubstrate.Four0.1uF

SDRAM DIMM

GENERALDESCRIPTION TheSamsungM390S2858CT1isa128Mbitx72SynchronousDynamicRAMhighdensitymemorymodule.TheSamsungM390S2858CT1consistsofeighteenCMOSStacked128Mx4bitSynchronousDRAMsintwoTSOP-II400milpackages,three18-bitsDriveICsforinputcontrolsignal,onePLLin

PB/REC PRE AMP FOR 2 DECK

INTRODUTION TheS1A0291X01isamonolithicintegratedcircuitconsistingofadualinputplaybackamplifierandadualinputrecordamplifierfordouble-deckorauto-reverseoperation. Itissuitablefor6V—9Vdouble-deckorauto-reversecassetteapplications. FEATURES •Dualinputtwo-chann

VIDEO AMP MERGED OSD PROCESSOR FOR MONITORS

VIDEOAMPMERGEDOSDPROCESSOR TheS1D2502A01isaveryhighfrequencyvideoamplifier&widerangeOSDprocessor1chipsystemwithI2CBuscontrolusedinmonitors.Itcontains3matchedR/G/BvideoamplifierswithOSDprocessorandprovidesflexibleinterfacingtoI2CBuscontrolledadjust

FRACTIONAL-N RF/INTEGER-N IF DUAL PLL

INTRODUCTION TheS1M8836/37isaFractional-Nfrequencysynthesizerwithintegratedprescalers,designedforRFoperationupto1.0GHz/2.5GHzandforIFoperationupto520MHz.Thefractional-Nsynthesizerallowsfast-locking,lowphasenoisephase-lockedloopstobebuilteasily,thushavingrap

bipolar integrated circuit designed as a telephone bell replacement

INTRODUCTION TheS1T2410B01/B02isabipolarintegratedcircuitdesignedasatelephonebellreplacement. FEATURES •Designedfortelephonebellreplacement •Lowdraincurrent •SmallsizeMINIDIPpackage •Adjustable2-frequencytone •Adjustablewarblingrate •Built-inhysteresispreve

FM IF RECEIVER FOR FLEX PAGER

INTRODUCTION TheS1T8515AisadesignedforFMdetectionontheFLEXpagerset.ItconsistsofanOscillator,Mixer,LimitingIFAmp.QuadratureDetector,Regulator,RSSI(ReceivedSignalStrengthIndicator),BitRateFilter,anda2-level/4-levelFSKcomparator.Ithasa24-SSOP(0.65mm)Surfac

ENHANCED-1 CHIP CT0 RF IC

INTRODUCTION S1T8528isa1CHIPRFICwhichcanbeusedinhighperformanceCTOCLPsystemsatmax.60MHz.S1T8528isdesignedtoincludeareceiver,PLLandCOMPANDERtominimizePCBspacerequirements.ImprovedRXcharacteristicssuchasinter-modulation,spuriousresponseandadjacentchannel

CD and DVD playback

INTRODUCTION TheS5L1462B01isusedforCDandDVDplayback.Itreceivesopticalsignalfromtheopticalpick-uptoproducethedata-generatingRFsignal,theservoerrorsignalforstableservocontrol,andthemonitorsignal.ThisRFICcanbeusedintheCD1x,2x,ortheDVD1xCLV(Constant

FEEX ALPHANUMERIC DECODER II

INTRODUCTION ThisFLEXTMAlphanumericDecoderIIdatesheetdescribestheoperationoftheS5T8702. TheS5T8702simplifiesimplementationofaFLEXTMpagingdevicebyinterfacingwithanyofseveraloff-the-shelfpagingreceiversandanyofseveraloff-the-shelfhostmicrocontroller/microprocess

Future Technology Devices International Ltd

[FTDIChip] Introduction FunctionalDescription TheUSB-COM-Plusmodulesareafamilyofcommunicationdevices.Thismodel,USB-COM422-Plus1,providesasimplemethodofadaptinglegacyserialdeviceswithRS422interfacestomodernUSBports. Thisisaccomplishedbyincorporatingtheindustry

Single-Panel Liquid Crystal Optical Engine for Rear Projectors

Description TheDS001AKAisasingle-panelliquidcrystalopticalengineforuseinrearprojectors,capableoffull-colordisplayswithoutcolorfilters(CF). Thisengineprovidesawideaspectratioof16:9,suchasthoserepresentedinHD. Theside-blackfunctionalsoallowsanaspectratio

Single-Panel Liquid Crystal Optical Engine for Rear Projectors

Description TheDS002AKAisasingle-panelliquidcrystalopticalengineforuseinrearprojectors,capableoffull-colordisplayswithoutcolorfilters(CF).Up/downand/orright/leftinversionfunctionsaccommodatevariousmountingmethods. Shortprojectiondistancesaremadepossiblethrough

PIN Diode SP2T

FEATURES ■10-2000MHz ■TTLDriver ■Non-Reflective ■14PinDIP ■SeeCDS0622or100C1558 forConnectorizedVersions

Single-Panel Liquid Crystal Optical Engine for Rear Projectors

Description TheDS005AKAisasingle-panelliquidcrystalopticalengineforuseinrearprojectors,andiscapableoffull-colordisplayswithoutcolorfilters(CF). TheDS005AKAemploysasquarepixelarrangementoptimalfordataprojectorapplications,andallowscleargraphicandcharacterd

Single-Panel Liquid Crystal Optical Engine for Rear Projectors

Description TheDS005AKCisasingle-panelliquidcrystalopticalengineforuseinrearprojectors,andiscapableoffull-colordisplayswithoutcolorfilters(CF). TheDS005AKCemploysasquarepixelarrangementoptimalfordataprojectorapplications,andallowscleargraphicandcharacterd

PIN Diode SP3T

FEATURES ■50-500MHz ■2mA,+15VDC ■0.75dBInsertionLoss ■50dBIsolation ■Non-Reflective ■CMOSDriver

PIN Diode SP4T

FEATURES ■10-500MHz ■6mA,+15VDC ■CMOSDriver ■Non-Reflective ■Small14PinDIP ■LowCost

PIN Diode Transfer Switch

FEATURES ■15-300MHz ■5VCMOSDriver ■Small.75Sq.Package

PIN Diode SP7T

FEATURES ■20-400MHz ■Small16PinDIP ■LowCost ■LowCurrentConsumption

PolarFire SoC Advanced Datasheet

ThisdatasheetdescribesPolarFire®SoCdevicecharacteristicswithindustrialtemperaturerange(–40°Cto100°CTJ)andextendedcommercialtemperaturerange(0°Cto100°CTJ).Thedevicesareprovidedwithastandardspeedgrade(STD)anda–1speedgradewithhigherperformance.TheFPGAco

Detect Switch

Features/Benefits •Compactdesign •Lowactuationforce •Detectmechanicalmovement •Leftandrightoptions •Rightangleoptions TypicalApplications •Computerperipherals •Officeequipment •Consumerelectronics •Appliances •Audioandvisualequipment

Detect Switch

Features/Benefits •Compactdesign •Lowactuationforce •Detectmechanicalmovement •Leftandrightoptions •Rightangleoptions TypicalApplications •Computerperipherals •Officeequipment •Consumerelectronics •Appliances •Audioandvisualequipment

DIP SWITCH

FEATURES •2.54mmpitch •convexorflatbottomoption •2~12poleoptions •raisedorflatactuatoroption •throughhole

DIP SWITCH

FEATURES •2.54mmpitch •convexorflatbottomoption •2~12poleoptions •raisedorflatactuatoroption •throughhole

DIP SWITCH

FEATURES •2.54mmpitch •convexorflatbottomoption •2~12poleoptions •raisedorflatactuatoroption •throughhole

DIP SWITCH

FEATURES •2.54mmpitch •convexorflatbottomoption •2~12poleoptions •raisedorflatactuatoroption •throughhole

DIP SWITCH

FEATURES •2.54mmpitch •convexorflatbottomoption •2~12poleoptions •raisedorflatactuatoroption •throughhole

DIP SWITCH

FEATURES •2.54mmpitch •convexorflatbottomoption •2~12poleoptions •raisedorflatactuatoroption •throughhole

DIP SWITCH

FEATURES •2.54mmpitch •convexorflatbottomoption •2~12poleoptions •raisedorflatactuatoroption •throughhole

QUADRUPLE LINE DRIVERS

RS-232C QUAD LINE DRIVER

QUADRUPLE LINE DRIVERS

RS232C QUAD LINE DRIVER

QUADRUPLE LINE DRIVERS

QUAD MDTL LINE DRIVER EIA-232D

QUADRUPLE LINE DRIVERS

Quad Line EIA−232D Driver

QUADRUPLE LINE DRIVERS

QUADRUPLE LINE DRIVERS

QUADRUPLE LINE DRIVERS

RS-232 quad line driver

Quad Line EIA−232D Driver

RS232C QUAD LINE DRIVER

QUAD MDTL LINE DRIVER EIA-232D

RS-232C QUAD LINE DRIVER

QUADRUPLE LINE DRIVERS

QUADRUPLE LINE DRIVERS

QUADRUPLE LINE DRIVERS

QUADRUPLE LINE DRIVERS

QUADRUPLE LINE DRIVERS

QUADRUPLE LINE DRIVERS

Long Range Timer

High-Voltage, High-Current Darlington Transistor Arrays

High-Voltage, High-Current Darlington Transistor Arrays

Long Range Timer