位置:DS_K7A803600B > DS_K7A803600B详情

DS_K7A803600B中文资料

厂家型号

DS_K7A803600B

文件大小

401.61Kbytes

页面数量

18

功能描述

256Kx36 & 512Kx18 Synchronous SRAM

数据手册

下载地址一下载地址二到原厂下载

生产厂商

SAMSUNG

DS_K7A803600B数据手册规格书PDF详情

GENERAL DESCRIPTION

The K7A803600B and K7A801800B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

FEATURES

• Synchronous Operation.

• 2 Stage Pipelined operation with 4 Burst.

• On-Chip Address Counter.

• Self-Timed Write Cycle.

• On-Chip Address and Control Registers.

• 3.3V+0.165V/-0.165V Power Supply.

• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O

• 5V Tolerant Inputs Except I/O Pins.

• Byte Writable Function.

• Global Write Enable Controls a full bus-width write.

• Power Down State via ZZ Signal.

• LBO Pin allows a choice of either a interleaved burst or a linear burst.

• Three Chip Enables for simple depth expansion with No Data Contention only for TQFP ; 2cycle Enable, 1cycle Disable.

• Asynchronous Output Enable Control.

• ADSP, ADSC, ADV Burst Control Pins.

• TTL-Level Three-State Output.

• 100-TQFP-1420A

• Operating in commeical and industrial temperature range.

DS_K7A803600B产品属性

  • 类型

    描述

  • 型号

    DS_K7A803600B

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    256Kx36 & 512Kx18 Synchronous SRAM

更新时间:2025-10-10 16:14:00
供应商 型号 品牌 批号 封装 库存 备注 价格
RICHTEK/立锜
23+
SOT23-5
15000
全新原装现货,价格优势
RTCHTEK
2447
QFN
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
RICHTEK/立锜
23+
QFN
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
N/A
25+
DIP3
2500
强调现货,随时查询!
25+
DIP3
2987
只售原装自家现货!诚信经营!欢迎来电!
N/A
23+
原厂正规渠道
5000
专注配单,只做原装进口现货
原厂封装
24+
DIP3
15300
公司常备大量原装现货,可开13%增票!
A
24+
b
8
NS
200
专营CAN铁帽CDIP
DAL
05+
原厂原装
97
只做全新原装真实现货供应