128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

GENERAL DESCRIPTION The K6F2016U4E families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery b

128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

GENERAL DESCRIPTION The K6F2016U4E families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery b

128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

GENERAL DESCRIPTION The K6F2016U4E families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery b

128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

文件：117.7 Kbytes Page：9 Pages

128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

文件：117.7 Kbytes Page：9 Pages