型号 功能描述 生产厂家 企业 LOGO 操作
DS_K7B803625B

256Kx36 & 512Kx18-Bit Synchronous Burst SRAM

GENERAL DESCRIPTION The K7B803625B and K7B801825B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. FEATURES • Synchronous Operation. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip

SAMSUNG

三星

DS_K7B803625B

256Kx36 & 512Kx18-Bit Synchronous Burst SRAM

SAMSUNG

三星

256Kx36 & 512Kx18-Bit Synchronous Burst SRAM

GENERAL DESCRIPTION The K7B803625B and K7B801825B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. FEATURES • Synchronous Operation. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip

SAMSUNG

三星

256Kx36 & 512Kx18 Synchronous SRAM

GENERAL DESCRIPTION The K7B803625B and K7B801825B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. FEATURES • Synchronous Operation. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip

SAMSUNG

三星

256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM

文件:400.63 Kbytes Page:18 Pages

SAMSUNG

三星

256Kx36 & 512Kx18 Synchronous SRAM

文件:582.63 Kbytes Page:21 Pages

SAMSUNG

三星

DS_K7B803625B产品属性

  • 类型

    描述

  • 型号

    DS_K7B803625B

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    256Kx36 & 512Kx18-Bit Synchronous Burst SRAM

更新时间:2026-1-28 21:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NS
05+
DIP8
160
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SMAL
2026+
BGA
520
原装正品,假一罚十!
24+
DIP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
NS/国半
QQ咨询
DIP
105
全新原装 研究所指定供货商
NS
24+
DIP-8
3500
原装现货,可开13%税票
DEUTSCH
23+
65480
RICHTEK/立锜
25+
SOT23-5
15000
全新原装现货,价格优势
NS
22+
DIP8
8000
原装正品支持实单
NS
25+
DIP-8
3000
全新原装、诚信经营、公司现货销售
DAL
05+
原厂原装
97
只做全新原装真实现货供应

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