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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DS_K7R323682M | 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM FEATURES • 1.8V+0.1V/-0.1V Power Supply. • DLL circuitry for wide output data valid window and future freguency scaling. • I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O. • Separate independent read and write data ports with concurrent read and write | Samsung 三星 |   | |
DS_K7R323682M | 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM | Samsung 三星 | | |
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM FEATURES • 1.8V+0.1V/-0.1V Power Supply. • DLL circuitry for wide output data valid window and future freguency scaling. • I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O. • Separate independent read and write data ports with concurrent read and write | Samsung 三星 | | ||
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM FEATURES • 1.8V+0.1V/-0.1V Power Supply. • DLL circuitry for wide output data valid window and future freguency scaling. • I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O. • Separate independent read and write data ports with concurrent read and write | Samsung 三星 | | ||
1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM 文件：458.51 Kbytes Page：20 Pages | Samsung 三星 | |
DS_K7R323682M产品属性
- 类型
描述
- 型号
DS_K7R323682M
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RICHTEK/立锜 |
25+ |
SOT23-5 |
15000 |
全新原装现货,价格优势 |
|||
NS |
23+ |
NA |
12000 |
全新原装假一赔十 |
|||
NS |
25+ |
DIP-8 |
3000 |
全新原装、诚信经营、公司现货销售 |
|||
25+ |
DIP3 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
||||
Microchip |
23+ |
2017-MI |
21500 |
受权代理!全新原装现货特价热卖! |
|||
MICROCHIP/微芯 |
22+ |
N/A |
8000 |
现货,原厂原装假一罚十! |
|||
NS |
200 |
专营CAN铁帽CDIP |
|||||
RICHTEK/立锜 |
23+ |
QFN |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
N/A |
25+ |
DIP3 |
2500 |
强调现货,随时查询! |
|||
RTCHTEK |
2447 |
QFN |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
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DS_K7R323682M规格书下载地址
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