LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DPLS160) • Surface Mount Package Suited for Automated Assembly • Lead Free/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DPLS160) • Surface Mount Package Suited for Automated Assembly • Lead Free/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DPLS160V) • Surface Mount Package Suited for Automated Assembly • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q 101 Standards for High Reliab

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (DPLS160V) • Surface Mount Package Suited for Automated Assembly • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 1) • Green Device (Note 2) • Qualified to AEC-Q 101 Standards for High Reliab

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 60V 1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

封装/外壳：SOT-563，SOT-666 包装：散装 描述：TRANS NPN 60V 1A SOT563 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

POWER TRANSISTORS(10A,320-380V,125W)