N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • 70mΩ @VGS = 4.5V • 100mΩ @VGS = 2.5V • 170mΩ @VGS = 1.5V • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 2, 3 and 6) • Qualified to AEC-Q101 S

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • 70mΩ @VGS = 4.5V • 100mΩ @VGS = 2.5V • 170mΩ @VGS = 1.5V • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 2, 3 and 6) • Qualified to AEC-Q101 S

Customer Specification

Construction 1) Conductor a) Material Tinned Copper, per ASTMB-33 and CID-A-A-59551 b) Stranding Solid c) Diameter 0.0063 2) Braid Data a) Nominal ID 13/64 (.203) b) AWG of Ends 34 c) Number of Carriers 24 d) Nominal Percent Coverage 99 e) Total Number of Ends 192 f) Approx. Equiv. AWG

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