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位置：首页 > IC中文资料 > DMN2013UFDE

DMN2013UFDE价格

参考价格：￥1.4108

型号：DMN2013UFDE-7 品牌：Diodes 备注：这里有DMN2013UFDE多少钱，2026年最近7天走势，今日出价，今日竞价，DMN2013UFDE批发/采购报价，DMN2013UFDE行情走势销售排行榜，DMN2013UFDE报价。
型号 功能描述 生产厂家 企业 LOGO 操作
DMN2013UFDE

N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation 20V N Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.

DIODES

美台半导体

DMN2013UFDE

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：220.14 Kbytes Page：6 Pages

DIODES

美台半导体

DMN2013UFDEQ

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2013UFDEQ is suitable for automotive

DIODES

美台半导体

DMN2013UFDEQ

20V N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. •0.6mm Profile – Ideal for Low Profile Applications\n•PCB Footprint of 4mm2\n•Low Gate Threshold Voltage\n•ESD Protected Gate\n•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)\n•Halogen and Antimony Free. “Green” Device (Note 3)\n•The DMN2013UFDEQ is suitable for automotive applications requi;

DIODES

美台半导体

DMN2013UFDEQ-13

丝印代码：N6；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2013UFDEQ is suitable for automotive

DIODES

美台半导体

DMN2013UFDEQ-7

丝印代码：N6；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2013UFDEQ is suitable for automotive

DIODES

美台半导体

DMN2013UFDEWQ

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  Low Gate Threshold Voltage  ESD Protected Gate  Additional Tin-Plated on Sidewall Pads for Optical Solder Inspection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3

DIODES

美台半导体

DMN2013UFDEWQ-13

丝印代码：N6P；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  Low Gate Threshold Voltage  ESD Protected Gate  Additional Tin-Plated on Sidewall Pads for Optical Solder Inspection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3

DIODES

美台半导体

DMN2013UFDEWQ-7

丝印代码：N6P；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  Low Gate Threshold Voltage  ESD Protected Gate  Additional Tin-Plated on Sidewall Pads for Optical Solder Inspection  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3

DIODES

美台半导体

DMN2013UFDE_15

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：293.96 Kbytes Page：6 Pages

DIODES

美台半导体

DMN2013UFDE-13

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：293.96 Kbytes Page：6 Pages

DIODES

美台半导体

DMN2013UFDE-13

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：220.14 Kbytes Page：6 Pages

DIODES

美台半导体

DMN2013UFDE-7

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：293.96 Kbytes Page：6 Pages

DIODES

美台半导体

DMN2013UFDE-7

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：220.14 Kbytes Page：6 Pages

DIODES

美台半导体

DMN2013UFDEQ-13

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：293.96 Kbytes Page：6 Pages

DIODES

美台半导体

DMN2013UFDEQ-7

20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：293.96 Kbytes Page：6 Pages

DIODES

美台半导体

DMN2013UFDEWQ

20V N-Channel Enhancement Mode MOSFET

DIODES

美台半导体

CGY2013G

GSM 4 W power amplifier

GENERAL DESCRIPTION The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply. The PA requires only a 30 dB harmonic low-pass filter to comply with the GSM transmit spurious specification. It can be

PHILIPS

飞利浦

F2013

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

POLYFET

NTE2013

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

NTE

SAA2013

Adaptive allocation and scaling for PASC coding in DCC systems

GENERAL DESCRIPTION The SAA2013 performs the adaptive allocation and scaling function in the Precision Adaptive Sub-band Coding (PASC) system. It is not required in playback only applications, and is only used during recording. To complete the PASC processor, a SAA2003 stereo filter and codec is

PHILIPS

飞利浦

SAA2013H

Adaptive allocation and scaling for PASC coding in DCC systems

GENERAL DESCRIPTION The SAA2013 performs the adaptive allocation and scaling function in the Precision Adaptive Sub-band Coding (PASC) system. It is not required in playback only applications, and is only used during recording. To complete the PASC processor, a SAA2003 stereo filter and codec is

PHILIPS

飞利浦

DMN2013UFDE产品属性

  • 类型

    描述

  • Automotive Compliant PPAP：

    On Request*

  • Polarity：

    N

  • ESD Diodes：

    Yes

  • VDS：

    20 V

  • VGS：

    8 ±V

  • IDS @ TA = +25°C：

    10.5 A

  • PD @ TA = +25°C：

    0.66 W

  • RDS(ON) Max @ VGS (10V)：

    N/A mΩ

  • RDS(ON) Max @ VGS (4.5V)：

    11 mΩ

  • RDS(ON) Max @ VGS (2.5V)：

    13 mΩ

  • RDS(ON) Max @ VGS (1.8V)：

    N/A mΩ

  • VGS (th) Max：

    1.1 V

  • QG Typ @ VGS = 4.5V (nC)：

    14.3 nC

  • QG Typ @ VGS = 10V (nC)：

    32 nC

  • Packages：

    U-DFN2020-6 (Type E)

DMN2013UFDE供应商更多...

更新时间：2026-8-3 16:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市美思瑞电子科技有限公司
DMN2013UFDE-7
DIODES/美台
22+
N/A
12245
现货,原厂原装假一罚十!
询价
深圳市高捷芯城科技有限公司
DMN2013UFDEQ-7
DIODES(美台)
25+
UDFN2020-6
6843
样件支持,可原厂排单订货!
询价
深圳市粤骏腾电子科技有限公司
DMN2013UFDE
DIODES/美台
26+
U-DFN2020-6
98000
原装现货假一罚十
询价
深圳市达恩科技有限公司
DMN2013UFDE-7
DiodesZetex
24+
NA
3000
进口原装正品优势供应
询价
上海金庆电子技术有限公司
DMN2013UFDE-7
DIODES
1505+
U-DFN2020
21105
全新 发货1-2天
询价
深圳市乾能惠电子有限公司
DMN2013UFDE-7
DIODES/美台
24+
N/A
500000
美台原厂超低价支持
询价
深圳市米数科技有限公司
DMN2013UFDE-7
DIODES/美台
25+
NA
3100
DIODES授权代理商
询价
深圳市科恒伟业电子有限公司
DMN2013UFDE-7
DIODES/美台
2450+
U-DFN2020-6
9850
只做原厂原装正品现货或订货假一赔十!
询价
深圳市百诺芯科技有限公司
DMN2013UFDEWQ-7
DIODES/美台
23+
NA
12730
原装正品代理渠道价格优势
询价
深圳市勤思达科技有限公司
DMN2013UFDE-7
DIODES(美台)
U-DFN2020-6(E 类)
5280
全新原装正品现货可开票
询价

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