20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2013UFDEQ is suitable for automotive

20V N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. •0.6mm Profile – Ideal for Low Profile Applications\n•PCB Footprint of 4mm2\n•Low Gate Threshold Voltage\n•ESD Protected Gate\n•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)\n•Halogen and Antimony Free. “Green” Device (Note 3)\n•The DMN2013UFDEQ is suitable for automotive applications requi;

丝印代码：N6；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2013UFDEQ is suitable for automotive

丝印代码：N6；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2013UFDEQ is suitable for automotive

20V N-CHANNEL ENHANCEMENT MODE MOSFET

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20V N-CHANNEL ENHANCEMENT MODE MOSFET

文件：293.96 Kbytes Page：6 Pages

GSM 4 W power amplifier

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Adaptive allocation and scaling for PASC coding in DCC systems

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