DMG9N65CT价格
参考价格：￥2.7578
型号：DMG9N65CT 品牌：Diodes 备注：这里有DMG9N65CT多少钱，2026年最近7天走势，今日出价，今日竞价，DMG9N65CT批发/采购报价，DMG9N65CT行情走势销售排行榜，DMG9N65CT报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DMG9N65CT | N-CHANNEL ENHANCEMENT MODE MOSFET This new generation complementary dual MOSFET features low onresistance\nand fast switching, making it ideal for high efficiency power management applications. | DIODES 美台半导体 |   | |
DMG9N65CT | isc N-Channel MOSFET Transistor 文件：305.35 Kbytes Page：2 Pages | ISC 无锡固电 | | |
DMG9N65CT | Low Input Capacitance 文件：233.29 Kbytes Page：6 Pages | DIODES 美台半导体 | | |
N-CHANNEL ENHANCEMENT MODE MOSFET DIODES has been fabricated using an\nadvanced high voltage MOSFET process ,\nThis advanced technology has been especially tailored to minimize\non-state resistance, provide superior switching performance,\nand withstand high energy pulse in the avalanche and\ncommutation mode. These devices are well | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：233.29 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
Low Input Capacitance 文件：438.34 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
isc N-Channel MOSFET Transistor 文件：296.33 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：438.34 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A) HEXFET® Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● | IRF | | ||
Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A) HEXFET® Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● | IRF | | ||
SMPS MOSFET HEXFET® Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● | IRF | | ||
HIPERFET Power MOSFTETs HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications. | IXYS 艾赛斯 | | ||
Power MOSFET 文件：158.11 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |
DMG9N65CT产品属性
- 类型
描述
- AutomotiveCompliantPPAP：
No
- Polarity：
N
- ESDDiodes：
No
- VDS：
650V
- VGS：
30±V
- IDS@TA=+25°C：
9A
- PD@TA=+25°C：
165W
- RDS(ON)Max@VGS(10V)：
1300mΩ
- RDS(ON)Max@VGS(4.5V)：
N/AmΩ
- RDS(ON)Max@VGS(2.5V)：
N/AmΩ
- RDS(ON)Max@VGS(1.8V)：
N/AmΩ
- VGS(th)Max：
5V
- QGTyp@VGS=4.5V(nC)：
N/AnC
- QGTyp@VGS=10V(nC)：
39nC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Diodes(美台) |
2511 |
标准封装 |
12000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
DIODES原 |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
26+ |
N/A |
74000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Diodes(美台) |
23+ |
标准封装 |
12000 |
正规渠道,只有原装! |
|||
VBsemi(台湾微碧) |
2447 |
SC75-3 |
105000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
DIODES/美台 |
23+ |
SOT-523 |
50000 |
全新原装正品现货,支持订货 |
|||
DIODES |
23+ |
TO-220F |
8560 |
受权代理!全新原装现货特价热卖! |
|||
Diodes |
22+ |
TO2203 Isolated Tab |
9000 |
原厂渠道,现货配单 |
|||
DiodesZetex |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
Diodes(美台) |
25+ |
SOT |
28000 |
原装正品，可来电咨询 |
DMG9N65CT规格书下载地址
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2020-1-9
DdatasheetPDF页码索引
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