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DMG9N65CT价格
参考价格：￥2.7578
型号：DMG9N65CT 品牌：Diodes 备注：这里有DMG9N65CT多少钱，2026年最近7天走势，今日出价，今日竞价，DMG9N65CT批发/采购报价，DMG9N65CT行情走势销售排行榜，DMG9N65CT报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DMG9N65CT | Low Input Capacitance 文件：233.29 Kbytes Page：6 Pages | DIODES 美台半导体 |   | |
DMG9N65CT | isc N-Channel MOSFET Transistor 文件：305.35 Kbytes Page：2 Pages | ISC 无锡固电 | | |
DMG9N65CT | N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | |
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：233.29 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
Low Input Capacitance 文件：438.34 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | ||
isc N-Channel MOSFET Transistor 文件：296.33 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：438.34 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A) HEXFET® Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● | IRF | | ||
Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A) HEXFET® Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● | IRF | | ||
SMPS MOSFET HEXFET® Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● | IRF | | ||
HIPERFET Power MOSFTETs HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications. | IXYS 艾赛斯 | | ||
Power MOSFET 文件：158.11 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |
DMG9N65CT产品属性
- 类型
描述
- 型号
DMG9N65CT
- 功能描述
MOSFET N-Ch Enh Mode FET 650V 10V VGS 9.0A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Diodes Inc |
25+ |
N/A |
6843 |
样件支持,可原厂排单订货! |
|||
Diodes Inc |
25+ |
N/A |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
DIODES原 |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
Diodes |
22+ |
TO2203 Isolated Tab |
9000 |
原厂渠道,现货配单 |
|||
DIODES/美台 |
1628+ |
TO-220 |
150 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
大东 |
2025+ |
DIP |
32000 |
原装正品现货供应商原厂渠道物美价优 |
|||
DiodesZetex |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
DIODES/美台 |
25+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
DIODES/美台 |
24+ |
N/A |
500000 |
美台原厂超低价支持 |
|||
DIODES/美台 |
23+ |
SO-8 |
12000 |
原装正品假一罚百!可开增票! |
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DMG9N65CT规格书下载地址
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2020-1-9
DdatasheetPDF页码索引
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