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IRFB9N65A价格
参考价格：￥7.7233
型号：IRFB9N65APBF 品牌：Vishay 备注：这里有IRFB9N65A多少钱，2025年最近7天走势，今日出价，今日竞价，IRFB9N65A批发/采购报价，IRFB9N65A行情走势销售排行榜，IRFB9N65A报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFB9N65A | Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A) HEXFET® Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● | IRF |   | |
IRFB9N65A | Power MOSFET 文件：158.11 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | |
IRFB9N65A | iscN-Channel MOSFET Transistor 文件：329.14 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFB9N65A | Power MOSFET 文件：180.51 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | |
IRFB9N65A | SMPS MOSFET | Infineon 英飞凌 | | |
SMPS MOSFET HEXFET® Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● | IRF | | ||
SMPS MOSFET HEXFET® Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● | IRF | | ||
Power MOSFET 文件：180.51 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：180.51 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：158.11 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：180.51 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | ||
Fast Switching Speed 文件：67.88 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
9A, 650V N-CHANNEL POWER MOSFET 文件：177.83 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.10568 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
9A 650V N-channel enhancement mode field effect transistor 文件：961.5 Kbytes Page：6 Pages | YFWDIODE 佑风微 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.10567 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | |
IRFB9N65A产品属性
- 类型
描述
- 型号
IRFB9N65A
- 功能描述
MOSFET N-Chan 650V 8.5 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
23+ |
TO-220-3 |
50000 |
原装正品 支持实单 |
|||
IR |
24+ |
TO-220 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
IR |
2511 |
TO-220 |
12800 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
IR |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
2015+ |
TO-220AB |
12500 |
全新原装,现货库存长期供应 |
|||
IR |
23+ |
TO-220 |
12800 |
正规渠道,只有原装! |
|||
VISHAY/威世 |
25+ |
TO-220 |
880000 |
明嘉莱只做原装正品现货 |
|||
VISHAY/威世 |
24+ |
TO-220 |
6000 |
全新原装,一手货源,全场热卖! |
|||
IR |
23+ |
TO-263 |
8000 |
只做原装现货 |
|||
IR |
23+ |
NA |
2860 |
原装正品代理渠道价格优势 |
IRFB9N65A规格书下载地址
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2019-5-5
DdatasheetPDF页码索引
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