iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =0.93Ω (MAX) • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

Power MOSFET

Power MOSFET

文件：158.11 Kbytes Page：8 Pages

Power MOSFET

文件：158.11 Kbytes Page：8 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.10568 Mbytes Page：10 Pages

Fast Switching Speed

文件：67.88 Kbytes Page：2 Pages

9A, 650V N-CHANNEL POWER MOSFET

文件：177.83 Kbytes Page：5 Pages

9A 650V N-channel enhancement mode field effect transistor

文件：961.5 Kbytes Page：6 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.10567 Mbytes Page：10 Pages