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IRFB9N65价格
参考价格：￥7.7233
型号：IRFB9N65APBF 品牌：Vishay 备注：这里有IRFB9N65多少钱，2025年最近7天走势，今日出价，今日竞价，IRFB9N65批发/采购报价，IRFB9N65行情走势销售排行榜，IRFB9N65报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFB9N65 | Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A) HEXFET® Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● | IRF |   | |
IRFB9N65 | SMPS MOSFET | Infineon 英飞凌 | | |
Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A) HEXFET® Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● | IRF | | ||
SMPS MOSFET HEXFET® Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● | IRF | | ||
SMPS MOSFET HEXFET® Power MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● | IRF | | ||
SMPS MOSFET | Infineon 英飞凌 | | ||
Power MOSFET 文件：180.51 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：158.11 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
iscN-Channel MOSFET Transistor 文件：329.14 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFET 文件：180.51 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：180.51 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：158.11 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | ||
Power MOSFET 文件：180.51 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | ||
Fast Switching Speed 文件：67.88 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
9A, 650V N-CHANNEL POWER MOSFET 文件：177.83 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.10568 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
9A 650V N-channel enhancement mode field effect transistor 文件：961.5 Kbytes Page：6 Pages | YFWDIODE 佑风微 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.10567 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | |
IRFB9N65产品属性
- 类型
描述
- 型号
IRFB9N65
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
23+ |
TO-220-3 |
50000 |
原装正品 支持实单 |
|||
IR |
24+ |
TO-220 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
IR |
2511 |
TO-220 |
12800 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
IR |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
23+ |
TO-220 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
2015+ |
TO-220AB |
12500 |
全新原装,现货库存长期供应 |
|||
VISHAY/威世 |
25+ |
TO-220 |
880000 |
明嘉莱只做原装正品现货 |
|||
IR |
23+ |
TO-220 |
12800 |
正规渠道,只有原装! |
|||
IR |
23+ |
TO-263 |
8000 |
只做原装现货 |
|||
VISHAY/威世 |
24+ |
TO-220 |
6000 |
全新原装,一手货源,全场热卖! |
IRFB9N65规格书下载地址
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DdatasheetPDF页码索引
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