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位置：首页 > IC中文资料第2040页 > CY7C138

CY7C138价格

参考价格：￥115.2244

型号：CY7C1380D-167AXC 品牌：Cynergy 3 备注：这里有CY7C138多少钱，2025年最近7天走势，今日出价，今日竞价，CY7C138批发/采购报价，CY7C138行情走势销售排行榜，CY7C138报价。
型号 功能描述 生产厂家 企业 LOGO 操作
CY7C138

4K x 8/9 Dual-Port Static RAM

文件：300.63 Kbytes Page：15 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C138

4K x 8/9 Dual-Port Static RAM with Sem, Int, Busy

文件：476 Kbytes Page：16 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C138

4K x 8/9 Dual-Port Static RAM with Sem, Int, Busy

Infineon

英飞凌

CY7C1380CV25

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380CV25-167AC

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380CV25-167AI

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380CV25-167BGC

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380CV25-167BGI

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380CV25-167BZC

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380CV25-167BZI

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380CV25-200AC

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380CV25-200AI

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380CV25-200BGC

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380CV25-200BGI

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380CV25-200BZC

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380CV25-200BZI

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380CV25-225AC

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380CV25-225AI

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380CV25-225BGC

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380CV25-225BGI

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380CV25-225BZC

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380CV25-250AC

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380CV25-250BGC

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1380CV25-250BZC

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1381D

18-Mbit (512K x 36/1M x 18) Flow-Through SRAM

Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1381D-100AXC

18-Mbit (512K x 36/1M x 18) Flow-Through SRAM

Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1381D-100AXI

18-Mbit (512K x 36/1M x 18) Flow-Through SRAM

Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1381D-100BGC

18-Mbit (512K x 36/1M x 18) Flow-Through SRAM

Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1381D-100BGI

18-Mbit (512K x 36/1M x 18) Flow-Through SRAM

Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1381D-100BGXC

18-Mbit (512K x 36/1M x 18) Flow-Through SRAM

Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1381D-100BGXI

18-Mbit (512K x 36/1M x 18) Flow-Through SRAM

Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1381D-100BZC

18-Mbit (512K x 36/1M x 18) Flow-Through SRAM

Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1381D-100BZI

18-Mbit (512K x 36/1M x 18) Flow-Through SRAM

Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1381D-100BZXC

18-Mbit (512K x 36/1M x 18) Flow-Through SRAM

Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1381D-100BZXI

18-Mbit (512K x 36/1M x 18) Flow-Through SRAM

Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1381D-133AXC

18-Mbit (512K x 36/1M x 18) Flow-Through SRAM

Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1381D-133BGC

18-Mbit (512K x 36/1M x 18) Flow-Through SRAM

Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1381D-133BGXC

18-Mbit (512K x 36/1M x 18) Flow-Through SRAM

Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1381D-133BZC

18-Mbit (512K x 36/1M x 18) Flow-Through SRAM

Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1381D-133BZXC

18-Mbit (512K x 36/1M x 18) Flow-Through SRAM

Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1382CV25

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1382CV25-167AC

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1382CV25-167AI

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1382CV25-167BGC

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1382CV25-167BGI

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1382CV25-167BZC

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1382CV25-167BZI

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1382CV25-200AC

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1382CV25-200AI

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1382CV25-200BGC

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1382CV25-200BGI

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1382CV25-200BZC

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1382CV25-200BZI

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1382CV25-225AC

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1382CV25-225AI

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1382CV25-225BGC

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1382CV25-225BGI

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1382CV25-225BZC

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1382CV25-225BZI

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1382CV25-250AC

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C138产品属性

  • 类型

    描述

  • 型号

    CY7C138

  • 制造商

    Cypress Semiconductor

  • 功能描述

    SRAM Chip Sync Quad 3.3V 18M-Bit 512K x 36 4.2ns 100-Pin TQFP

CY7C138供应商更多...

更新时间：2025-12-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
CY7C1381KVE33-133AXIT
CYPRESS(赛普拉斯)
24+
LQFP-100
5591
百分百原装正品,可原型号开票
询价
深圳市纳艾斯科技有限公司
CY7C1381KV33-133AXI
Cypress
24+
QFP
6800
只做自己库存,全新原装进口正品假一赔百,可开13个点增票
询价
深圳市科恒伟业电子有限公司
CY7C1380D-200AXC
CYPRESS
2450+
TQFP
9850
只做原装正品现货或订货假一赔十!
询价
深圳市正迈科技有限公司
CY7C1380D-167AXI
CYPRESS
23+
NA
9808
进口代理原装优势供应全系列可订货QQ1304306553
询价
中天科工半导体（深圳）有限公司
CY7C1383C-133AC
CYPRESS/赛普拉斯
25+
QFP
12496
CYPRESS/赛普拉斯原装正品CY7C1383C-133AC即刻询购立享优惠#长期有货
询价
深圳市富达微科技有限公司
CY7C1381KV33-133AXI
Infineon
24+
100-LQFP
30000
原厂原装，价格优势，欢迎洽谈！
询价
深圳市鸿昌盛电子科技有限公司
CY7C1380D-167AXC
CYPRESS
25+
144
公司原装现货常备库存!
询价
深圳市芯皇电子有限公司
CY7C1380C-133AC
CYPRESS/赛普拉斯
TQFP-100
23+
6000
原装现货有上库存就有货全网最低假一赔万
询价
深圳市力拓辉电子有限公司
CY7C1380D-167AXC
CYPRESS
21+
QFP100
2000
全新原装 鄙视假货
询价
深圳市明嘉莱科技有限公司
CY7C1380KV33-167AXC
CYPRESS/赛普拉斯
25+
100-LQFP
157481
明嘉莱只做原装正品现货
询价

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