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CY7C138价格
参考价格：￥115.2244
型号：CY7C1380D-167AXC 品牌：Cynergy 3 备注：这里有CY7C138多少钱，2025年最近7天走势，今日出价，今日竞价，CY7C138批发/采购报价，CY7C138行情走势销售排行榜，CY7C138报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CY7C138 | 4K x 8/9 Dual-Port Static RAM 文件：300.63 Kbytes Page：15 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 |   | |
CY7C138 | 4K x 8/9 Dual-Port Static RAM with Sem, Int, Busy 文件：476 Kbytes Page：16 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | |
CY7C138 | 4K x 8/9 Dual-Port Static RAM with Sem, Int, Busy | Infineon 英飞凌 | | |
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM Functional Description [1] The CY7C1381D/CY7C1383D/CY7C1381F/CY7C1383F is a 3.3V, 512K x 36 and 1M x 18 synchronous flow through SRAMs, designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |
CY7C138产品属性
- 类型
描述
- 型号
CY7C138
- 制造商
Cypress Semiconductor
- 功能描述
SRAM Chip Sync Quad 3.3V 18M-Bit 512K x 36 4.2ns 100-Pin TQFP
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CY |
24+ |
QFP |
3000 |
全新原装现货 优势库存 |
|||
CYPRESS |
2014+ |
144 |
公司原装现货常备库存! |
||||
CYPRESS/赛普拉斯 |
24+ |
BGA |
9600 |
原装现货,优势供应,支持实单! |
|||
CYPRESS(赛普拉斯) |
24+ |
LQFP-100 |
5591 |
百分百原装正品,可原型号开票 |
|||
CYPRESS |
25+ |
原厂封装 |
10280 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
|||
Cypress |
24+ |
QFP |
6800 |
只做自己库存,全新原装进口正品假一赔百,可开13个点增票 |
|||
CYPRESS |
NEW |
TQFP/100 |
16463 |
全新原装正品,价格优势,长期供应,量大可订 |
|||
CY |
25+ |
QFP-100 |
3 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
CY |
25+ |
QFP |
3600 |
绝对原装!现货热卖! |
|||
CYPRESS |
2450+ |
TQFP |
9850 |
只做原装正品现货或订货假一赔十! |
CY7C138规格书下载地址
CY7C138参数引脚图相关
- DC-AC
- d880
- d870
- d828
- d7805
- d7804
- d641
- d609
- d415
- d408
- d403
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- d325
- d2007
- d2004
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- d126
- d1004
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- c波段
- CY7C187
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- CY7C182
- CY7C179
- CY7C178
- CY7C166
- CY7C164
- CY7C150
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- CY7C147
- CY7C146
- CY7C145
- CY7C144
- CY7C143
- CY7C142
- CY7C141
- CY7C140
- CY7C139
- CY7C1384D-166AXI
- CY7C1383D-133AXI
- CY7C1383D-133AXC
- CY7C1382DV33-200BZI
- CY7C1382DV33-167BZI
- CY7C1382D-200AXC
- CY7C1382D-167AXC
- CY7C138-25JXC
- CY7C1381D-133AXI
- CY7C1381D-133AXC
- CY7C1381D-100BZXI
- CY7C1381D-100BZI
- CY7C1381D-100AXC
- CY7C1380DV33-200BZI
- CY7C1380DV33-200AXI
- CY7C1380D-250AXC
- CY7C1380D-200AXC
- CY7C1380D-167BZC
- CY7C1380D-167AXI
- CY7C1380D-167AXC
- CY7C1373D-133AXI
- CY7C1373D-100AXC
- CY7C1372DV25-167AXC
- CY7C1372D-200AXC
- CY7C1372D-167AXI
- CY7C1372D-167AXC
- CY7C1371S-133AXC
- CY7C1371DV33-133BZI
- CY7C1371DV33-133AXI
- CY7C1371D-133BGC
- CY7C1371D-133AXC
- CY7C1371D-100AXI
- CY7C1371D-100AXC
- CY7C1370SV25-200AXC
- CY7C1370DV25-250AXC
- CY7C1370DV25-200BZC
- CY7C1370DV25-200AXC
- CY7C1370DV25-167AXC
- CY7C1370D-250AXI
- CY7C1370D-250AXC
- CY7C136
- CY7C135
- CY7C133
- CY7C132
- CY7C131
- CY7C130
- CY7C129
- CY7C109
- CY7C107
- CY7C057
- CY7C038
- CY7C037
- CY7C028
- CY7C027
- CY7C025
- CY7C024
- CY7C019
- CY7C018
- CY7C016
- CY7C009
CY7C138数据表相关新闻
CY7C1462AV33-167AXC 原装现货
CY7C1462AV33-167AXC 可做含税，支持实单
2021-9-18CY7C1399B-12ZC 十年IC，一家专业军工级IC供货商
CY7C1399B-12ZC CY7C1399B-12ZC，ALTERA（阿尔特拉），军工级IC专业优势渠道
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2020-7-15CY7C1370D-167AXI产品资料 CYPRESS/赛普拉斯
CY7C1370D-167AXI产品资料
2020-6-28CY7C1350G-133AXC公司原装现货/长期供应
全新原装
2019-3-30CY7C1354C-166AXI公司原装现货/长期供应
全新原装
2019-3-30
DdatasheetPDF页码索引
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