CY7C1380CV25规格书应用电路现货行情报价-IC资料网

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型号	功能描述	生产厂家企业	LOGO
CY7C1380CV25	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-167AC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-167AI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-167BGC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-167BGI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-167BZC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-167BZI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-200AC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-200AI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-200BGC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-200BGI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-200BZC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-200BZI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-225AC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-225AI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-225BGC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-225BGI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-225BZC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-250AC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-250BGC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-250BZC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25_04	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-133AC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-167AC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-167AI	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-167BGC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-167BGI	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-167BZC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-167BZI	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-200AC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-200BGC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-200BZC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-225AC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-225BGC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-225BZC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-250AC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-250BGC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1380CV25-250BZC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress

CY7C1380CV25产品属性

类型
描述
型号
CY7C1380CV25
制造商
Cypress Semiconductor

CY7C1380CV25供应商更多...

更新时间：2025-10-8 17:06:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
谛辉(北京/上海/青岛 )电子科技有限公司	CY7C1380D-167AXC		25+	原厂原封装	18000	原厂直接发货进口原装	询价
深圳市华斯顿科技有限公司	CY7C1380CV25-167AC	CYPRESS	25+23+	QFP	24147	绝对原装正品全新进口深圳现货	询价
深圳市赛尔通科技有限公司	CY7C1380D-167AXC	Cypress	23+	100-TQFP	65600		询价
深圳市毅创腾电子科技有限公司	CY7C1380CV25-167AC	CYRESS?	23+	TQFP	5700	绝对全新原装!现货!特价!请放心订购!	询价
深圳市一线半导体有限公司	CY7C1380D-167AXC	CYPRESS	24+	QFP	330		询价
深圳市河锋鑫科技有限公司	CY7C1380D167AXC	Cypress	22+	100TQFP (14x20)	9000	原厂渠道,现货配单	询价
标准国际(香港)有限公司	CY7C1380CV25-167AC	CY7C1380CV25-167AC		154	154		询价
齐创科技(上海,北京,青岛)有限公司	CY7C1380D-167AXC	CYPRESS	23+	TQFP	5000	原装正品,假一罚十	询价
深圳诚思涵科技有限公司	CY7C1380D-167AXC	CYPRESS	18+	QFP	85600	保证进口原装可开17%增值税发票	询价
易创佳业科技（深圳）有限公司	CY7C1380D167AXC	Cypress	23+	100TQFP (14x20)	9000	原装正品，支持实单	询价

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CY7C1462AV33-167AXC 原装现货
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全新原装
2019-3-30

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CY7C1380CV25产品属性

CY7C1380CV25供应商更多...

CY7C1380CV25芯片相关品牌

CY7C1380CV25规格书下载地址

CY7C1380CV25参数引脚图相关

CY7C1380CV25数据表相关新闻

CY7C1462AV33-167AXC 原装现货

CY7C1399B-12ZC 十年IC，一家专业军工级IC供货商

CY7C1399B-12ZC十年IC，一家专业军工级IC供货商

CY7C1370D-167AXI产品资料 CYPRESS/赛普拉斯

CY7C1350G-133AXC公司原装现货/长期供应

CY7C1354C-166AXI公司原装现货/长期供应

DdatasheetPDF页码索引