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型号	功能描述	生产厂家企业	LOGO
CY7C1380CV25	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-167AC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-167AI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-167BGC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-167BGI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-167BZC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-167BZI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-200AC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-200AI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-200BGC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-200BGI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-200BZC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-200BZI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-225AC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-225AI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-225BGC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-225BGI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-225BZC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-250AC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-250BGC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-250BZC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25_04	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-133AC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-167AC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-167AI	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-167BGC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-167BGI	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-167BZC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-167BZI	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-200AC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-200BGC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-200BZC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-225AC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-225BGC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-225BZC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-250AC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-250BGC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1380CV25-250BZC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS

CY7C1380CV25产品属性

类型
描述
型号
CY7C1380CV25
制造商
Cypress Semiconductor

CY7C1380CV25供应商更多...

更新时间：2026-3-2 17:29:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
华富测量(深圳)传感技术有限公司	CY7C1380D-167AXC	CYPRESS	2138+	原厂标准封装	8960	代理CYPRESS全系列芯片,原装现货	询价
标准国际(香港)有限公司	CY7C1380CV25-167AC	CY7C1380CV25-167AC	25+	154	154		询价
深圳市凯睿晟科技有限公司	CY7C1380D-167AXC	CYPRESS/赛普拉斯	21+	QFP100	2000	百域芯优势实单必成可开13点增值税发票	询价
深圳市福田区绿盛电子商行	CY7C1380D-167AXC	CYPRESS	2015+	SOP/QFP/PLCC	19889	一级代理原装现货,特价热卖!	询价
深圳市华斯顿科技有限公司	CY7C1380CV25-167AC	CYPRESS	25+23+	QFP	24147	绝对原装正品全新进口深圳现货	询价
深圳市正纳电子有限公司	CY7C1380D-167AXC	Cypress(赛普拉斯)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市卓越微芯电子有限公司	CY7C1380D-167AXC	CYPRESS	25+	QFP	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市欧立现代科技有限公司	CY7C1380CV25-167AC	CYRESS	24+	TQFP	6980	原装现货,可开13%税票	询价
深圳市毅创腾电子科技有限公司	CY7C1380CV25-167AC	CYRESS?	23+	TQFP	5700	绝对全新原装!现货!特价!请放心订购!	询价
深圳市一线半导体有限公司	CY7C1380D-167AXC	CYPRESS	24+	QFP	330		询价

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CY7C1380CV25规格书下载地址

CY7C1380CV25参数引脚图相关

CY7C1380CV25数据表相关新闻

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全新原装
2019-3-30

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CY7C1380CV25产品属性

CY7C1380CV25供应商更多...

CY7C1380CV25芯片相关品牌

CY7C1380CV25规格书下载地址

CY7C1380CV25参数引脚图相关

CY7C1380CV25数据表相关新闻

CY7C1462AV33-167AXC 原装现货

CY7C1399B-12ZC 十年IC，一家专业军工级IC供货商

CY7C1399B-12ZC十年IC，一家专业军工级IC供货商

CY7C1370D-167AXI产品资料 CYPRESS/赛普拉斯

CY7C1350G-133AXC公司原装现货/长期供应

CY7C1354C-166AXI公司原装现货/长期供应

DdatasheetPDF页码索引