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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CY7C1382CV25 | 512Kx36/1Mx18PipelinedSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshighspeed,low-powerCMOSdesignsusingadvancedsingle-layerpolysilicon,triple-layermetaltechnology.Eachmemorycellconsistsofsixtransistors. Features •Fastclockspeed:250,225,200,167MHz •Providehigh-p | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 |  |   |
CY7C1382CV25 | 18-Mbit(512Kx36/1Mx18)PipelinedSRAM 文件：510.23 Kbytes Page：33 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | |
512Kx36/1Mx18PipelinedSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshighspeed,low-powerCMOSdesignsusingadvancedsingle-layerpolysilicon,triple-layermetaltechnology.Eachmemorycellconsistsofsixtransistors. Features •Fastclockspeed:250,225,200,167MHz •Providehigh-p | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
512Kx36/1Mx18PipelinedSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshighspeed,low-powerCMOSdesignsusingadvancedsingle-layerpolysilicon,triple-layermetaltechnology.Eachmemorycellconsistsofsixtransistors. Features •Fastclockspeed:250,225,200,167MHz •Providehigh-p | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
512Kx36/1Mx18PipelinedSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshighspeed,low-powerCMOSdesignsusingadvancedsingle-layerpolysilicon,triple-layermetaltechnology.Eachmemorycellconsistsofsixtransistors. Features •Fastclockspeed:250,225,200,167MHz •Providehigh-p | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
512Kx36/1Mx18PipelinedSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshighspeed,low-powerCMOSdesignsusingadvancedsingle-layerpolysilicon,triple-layermetaltechnology.Eachmemorycellconsistsofsixtransistors. Features •Fastclockspeed:250,225,200,167MHz •Providehigh-p | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
512Kx36/1Mx18PipelinedSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshighspeed,low-powerCMOSdesignsusingadvancedsingle-layerpolysilicon,triple-layermetaltechnology.Eachmemorycellconsistsofsixtransistors. Features •Fastclockspeed:250,225,200,167MHz •Providehigh-p | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
512Kx36/1Mx18PipelinedSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshighspeed,low-powerCMOSdesignsusingadvancedsingle-layerpolysilicon,triple-layermetaltechnology.Eachmemorycellconsistsofsixtransistors. Features •Fastclockspeed:250,225,200,167MHz •Providehigh-p | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
512Kx36/1Mx18PipelinedSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshighspeed,low-powerCMOSdesignsusingadvancedsingle-layerpolysilicon,triple-layermetaltechnology.Eachmemorycellconsistsofsixtransistors. Features •Fastclockspeed:250,225,200,167MHz •Providehigh-p | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
512Kx36/1Mx18PipelinedSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshighspeed,low-powerCMOSdesignsusingadvancedsingle-layerpolysilicon,triple-layermetaltechnology.Eachmemorycellconsistsofsixtransistors. Features •Fastclockspeed:250,225,200,167MHz •Providehigh-p | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
512Kx36/1Mx18PipelinedSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshighspeed,low-powerCMOSdesignsusingadvancedsingle-layerpolysilicon,triple-layermetaltechnology.Eachmemorycellconsistsofsixtransistors. Features •Fastclockspeed:250,225,200,167MHz •Providehigh-p | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
512Kx36/1Mx18PipelinedSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshighspeed,low-powerCMOSdesignsusingadvancedsingle-layerpolysilicon,triple-layermetaltechnology.Eachmemorycellconsistsofsixtransistors. Features •Fastclockspeed:250,225,200,167MHz •Providehigh-p | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
512Kx36/1Mx18PipelinedSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshighspeed,low-powerCMOSdesignsusingadvancedsingle-layerpolysilicon,triple-layermetaltechnology.Eachmemorycellconsistsofsixtransistors. Features •Fastclockspeed:250,225,200,167MHz •Providehigh-p | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
512Kx36/1Mx18PipelinedSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshighspeed,low-powerCMOSdesignsusingadvancedsingle-layerpolysilicon,triple-layermetaltechnology.Eachmemorycellconsistsofsixtransistors. Features •Fastclockspeed:250,225,200,167MHz •Providehigh-p | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
512Kx36/1Mx18PipelinedSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshighspeed,low-powerCMOSdesignsusingadvancedsingle-layerpolysilicon,triple-layermetaltechnology.Eachmemorycellconsistsofsixtransistors. Features •Fastclockspeed:250,225,200,167MHz •Providehigh-p | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
512Kx36/1Mx18PipelinedSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshighspeed,low-powerCMOSdesignsusingadvancedsingle-layerpolysilicon,triple-layermetaltechnology.Eachmemorycellconsistsofsixtransistors. Features •Fastclockspeed:250,225,200,167MHz •Providehigh-p | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
512Kx36/1Mx18PipelinedSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshighspeed,low-powerCMOSdesignsusingadvancedsingle-layerpolysilicon,triple-layermetaltechnology.Eachmemorycellconsistsofsixtransistors. Features •Fastclockspeed:250,225,200,167MHz •Providehigh-p | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
512Kx36/1Mx18PipelinedSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshighspeed,low-powerCMOSdesignsusingadvancedsingle-layerpolysilicon,triple-layermetaltechnology.Eachmemorycellconsistsofsixtransistors. Features •Fastclockspeed:250,225,200,167MHz •Providehigh-p | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
512Kx36/1Mx18PipelinedSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshighspeed,low-powerCMOSdesignsusingadvancedsingle-layerpolysilicon,triple-layermetaltechnology.Eachmemorycellconsistsofsixtransistors. Features •Fastclockspeed:250,225,200,167MHz •Providehigh-p | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
512Kx36/1Mx18PipelinedSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshighspeed,low-powerCMOSdesignsusingadvancedsingle-layerpolysilicon,triple-layermetaltechnology.Eachmemorycellconsistsofsixtransistors. Features •Fastclockspeed:250,225,200,167MHz •Providehigh-p | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
512Kx36/1Mx18PipelinedSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshighspeed,low-powerCMOSdesignsusingadvancedsingle-layerpolysilicon,triple-layermetaltechnology.Eachmemorycellconsistsofsixtransistors. Features •Fastclockspeed:250,225,200,167MHz •Providehigh-p | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
512Kx36/1Mx18PipelinedSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshighspeed,low-powerCMOSdesignsusingadvancedsingle-layerpolysilicon,triple-layermetaltechnology.Eachmemorycellconsistsofsixtransistors. Features •Fastclockspeed:250,225,200,167MHz •Providehigh-p | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
512Kx36/1Mx18PipelinedSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshighspeed,low-powerCMOSdesignsusingadvancedsingle-layerpolysilicon,triple-layermetaltechnology.Eachmemorycellconsistsofsixtransistors. Features •Fastclockspeed:250,225,200,167MHz •Providehigh-p | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
18-Mbit(512Kx36/1Mx18)PipelinedSRAM 文件：510.23 Kbytes Page：33 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
18-Mbit(512Kx36/1Mx18)PipelinedSRAM 文件：510.23 Kbytes Page：33 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
18-Mbit(512Kx36/1Mx18)PipelinedSRAM 文件：510.23 Kbytes Page：33 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
18-Mbit(512Kx36/1Mx18)PipelinedSRAM 文件：510.23 Kbytes Page：33 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
18-Mbit(512Kx36/1Mx18)PipelinedSRAM 文件：510.23 Kbytes Page：33 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
18-Mbit(512Kx36/1Mx18)PipelinedSRAM 文件：510.23 Kbytes Page：33 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
18-Mbit(512Kx36/1Mx18)PipelinedSRAM 文件：510.23 Kbytes Page：33 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
18-Mbit(512Kx36/1Mx18)PipelinedSRAM 文件：510.23 Kbytes Page：33 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
18-Mbit(512Kx36/1Mx18)PipelinedSRAM 文件：510.23 Kbytes Page：33 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
18-Mbit(512Kx36/1Mx18)PipelinedSRAM 文件：510.23 Kbytes Page：33 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
18-Mbit(512Kx36/1Mx18)PipelinedSRAM 文件：510.23 Kbytes Page：33 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
18-Mbit(512Kx36/1Mx18)PipelinedSRAM 文件：510.23 Kbytes Page：33 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
18-Mbit(512Kx36/1Mx18)PipelinedSRAM 文件：510.23 Kbytes Page：33 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
18-Mbit(512Kx36/1Mx18)PipelinedSRAM 文件：510.23 Kbytes Page：33 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
18-Mbit(512Kx36/1Mx18)PipelinedSRAM 文件：510.23 Kbytes Page：33 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CYPRESS(赛普拉斯) |
24+ |
LQFP100 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
Cypress(赛普拉斯) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
Cypress Semiconductor Corp |
23+ |
100-TQFP14x20 |
7300 |
专注配单,只做原装进口现货 |
|||
CYPRESS/赛普拉斯 |
23+ |
NA |
1218 |
原装正品代理渠道价格优势 |
|||
Cypress Semiconductor Corp |
23+ |
100-TQFP14x20 |
7300 |
专注配单,只做原装进口现货 |
|||
Cypress(赛普拉斯) |
2324+ |
NA |
78920 |
二十余载金牌老企,研究所优秀合供单位,您的原厂窗口 |
|||
Cypress |
23+ |
100-TQFP(14x20) |
24840 |
专业分销产品!原装正品!价格优势! |
|||
CYPRESS/赛普拉斯 |
2021+ |
1218 |
十年专营原装现货,假一赔十 |
||||
CYPRESS |
2023+ |
100-TQFP |
65000 |
现货原装正品公司优 |
|||
Cypress Semiconductor Corp |
23+ |
100-TQFP(14x20) |
7535 |
正品原装货价格低 |
CY7C1382CV25芯片相关品牌
CY7C1382CV25规格书下载地址
CY7C1382CV25参数引脚图相关
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全新原装
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全新原装
2019-3-30
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