型号 功能描述 生产厂家&企业 LOGO 操作
CY7C1049B

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1049B

512Kx8StaticRAM

文件:293.91 Kbytes Page:9 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription TheCY7C1049isahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —1210mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400µWa

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

CY7C1049B产品属性

  • 类型

    描述

  • 型号

    CY7C1049B

  • 功能描述

    IC SRAM 4MBIT 15NS 36SOJ

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    96

  • 系列

    - 格式 -

  • 存储器

    闪存

  • 存储器类型

    FLASH

  • 存储容量

    16M(2M x 8,1M x 16)

  • 速度

    70ns

  • 接口

    并联

  • 电源电压

    2.65 V ~ 3.6 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    48-TFSOP(0.724,18.40mm 宽)

  • 供应商设备封装

    48-TSOP

  • 包装

    托盘

更新时间:2025-6-24 18:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS
101
SOJ-36
2500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CYPRESS
23+
NA
125
专做原装正品,假一罚百!
CYPRESS/赛普拉斯
25+
NA
65248
百分百原装现货 实单必成
Cypress(赛普拉斯)
24+
NA/
8735
原厂直销,现货供应,账期支持!
CYPRESS
23+
SOJ-36L
12800
公司只有原装 欢迎来电咨询。
CY10
25+
TSSOP
20000
全部原装现货优势产品
CY
1844+
SOJ36
6528
只做原装正品假一赔十为客户做到零风险!!
CY
24+
SOJ36
5650
公司原厂原装现货假一罚十!特价出售!强势库存!
CRYESS
2015+
SOJ
19889
一级代理原装现货,特价热卖!
CYPRESS
18+
TSOP44
85600
保证进口原装可开17%增值税发票

CY7C1049B芯片相关品牌

  • AMPHENOL
  • CK-COMPONENTS
  • DDK
  • GLENAIR
  • MACOM
  • Mitsubishi
  • MOLEX6
  • Panasonic
  • POWERDYNAMICS
  • RHOMBUS-IND
  • TELEDYNE
  • YAMAICHI

CY7C1049B数据表相关新闻