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CY7C1049B	512K x 8 Static RAM Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049B	512K x 8 Static RAM 文件：293.91 Kbytes Page：9 Pages	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049	512K x 8 Static RAM Functional Description The CY7C1049 is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 1210 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW a	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049B-12VC	512K x 8 Static RAM Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049B-15VC	512K x 8 Static RAM Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049B-15VI	512K x 8 Static RAM Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049B-17VC	512K x 8 Static RAM Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049B-17VI	512K x 8 Static RAM Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049B-20VC	512K x 8 Static RAM Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049B-20VI	512K x 8 Static RAM Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049B-25VC	512K x 8 Static RAM Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049B-25VI	512K x 8 Static RAM Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BL-17VC	512K x 8 Static RAM Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BL-20VC	512K x 8 Static RAM Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BL-20VI	512K x 8 Static RAM Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BL-25VC	512K x 8 Static RAM Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BL-25VI	512K x 8 Static RAM Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BN	512K x 8 Static RAM Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BN-12VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BN-12VXC	512K x 8 Static RAM Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BN-15VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BN-15VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BN-15VXC	512K x 8 Static RAM Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BN-15VXI	512K x 8 Static RAM Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BN-17VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BN-17VXC	512K x 8 Static RAM Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BN-20VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BN-20VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BN-20VXC	512K x 8 Static RAM Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BN-20VXI	512K x 8 Static RAM Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BN-25VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BN-25VXI	512K x 8 Static RAM Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BNL-17VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BNL-20VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BNL-25VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BNV33	512K x 8 Static RAM Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BNV33-12VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BNV33-12VXC	512K x 8 Static RAM Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BNV33-12VXI	512K x 8 Static RAM Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BNV33-12ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BNV33-15VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BNV33-15VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BNV33-15VXC	512K x 8 Static RAM Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BNV33-15VXI	512K x 8 Static RAM Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BNV33-15ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BNV33-15ZI	512K x 8 Static RAM Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BNV33-20VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BNV33-20VXC	512K x 8 Static RAM Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BNV33-20VXI	512K x 8 Static RAM Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BNV33L-15VXC	512K x 8 Static RAM Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-12VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-12VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-12ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-15VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-15VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-15ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-15ZI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-17VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-17VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress

CY7C1049B产品属性

类型
描述
型号
CY7C1049B
功能描述
IC SRAM 4MBIT 15NS 36SOJ
RoHS
否
类别
集成电路(IC) >> 存储器
系列
-
标准包装
96
系列
- 格式 -
存储器
闪存
存储器类型
FLASH
存储容量
16M（2M x 8，1M x 16）
速度
70ns
接口
并联
电源电压
2.65 V ~ 3.6 V
工作温度
-40°C ~ 85°C
封装/外壳
48-TFSOP（0.724，18.40mm 宽）
供应商设备封装
48-TSOP
包装
托盘

CY7C1049B供应商更多...

更新时间：2025-8-15 23:11:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市英卓尔科技有限公司	CY7C1049BV33-12ZC	CYPRESS	20+	TSOP	2960	诚信交易大量库存现货	询价
深圳市得捷芯城科技有限公司	CY7C1049B-15VI	Cypress(赛普拉斯)	24+	NA/	8735	原厂直销,现货供应,账期支持!	询价
深圳市凌旭科技有限公司	CY7C1049BV33-15VCT	CYPRESS	2016+	SOJ44	9000	只做原装,假一罚十,公司可开17%增值税发票!	询价
上海意淼电子科技有限公司	CY7C1049B-20VC	CY	23+	SOJ	6500	全新原装假一赔十	询价
深圳市益百分电子有限公司	CY7C1049BV33-15VC	CY	SOJ36		127	全新原装进口自己库存优势	询价
深圳市纳艾斯科技有限公司	CY7C1049BV33-20VC	CYPRESS	24+	SOJ36	8000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳市天芯威科技有限公司	CY7C1049B-15VXC	CYPRESS	22+23+	SOJ	8000	新到现货，只做原装进口	询价
深圳市科芯源微电子有限公司	CY7C1049BL-25VI	CYPRESS/赛普拉斯	25+	NA	65248	百分百原装现货实单必成	询价
深圳市威雅利发展有限公司	CY7C1049BV33-20VCT	CYPRESS	101	SOJ-36	2500	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市恒达亿科技有限公司	CY7C1049BN-15VXCT	Cypress	25+	SOP/QFP	3200	全新原装、诚信经营、公司现货销售!	询价

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DdatasheetPDF页码索引

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CY7C1049B产品属性

CY7C1049B供应商更多...

CY7C1049B芯片相关品牌

CY7C1049B规格书下载地址

CY7C1049B参数引脚图相关

CY7C1049B数据表相关新闻

CY7C1041GN30-10ZSXIT

CY7C10612DV33-10ZSXI

CY7C1041GN30-10ZSXIT-艾飞琪电子-只做原装原厂渠道-原厂代理

CY7C1061AV33-10ZXI 是由深圳市贸泽微电子有限公司重点推广的一款IC。

CY7C1041CV33-10ZXI

CY7C1049DV33-10ZSXI公司原装现货/长期供应

DdatasheetPDF页码索引