型号 功能描述 生产厂家&企业 LOGO 操作
CY7C1049BV33

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

CY7C1049BV33产品属性

  • 类型

    描述

  • 型号

    CY7C1049BV33

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    4MB(512K X 8)- FAST ASYNCH SRAM - Bulk

  • 制造商

    Cypress Semiconductor

更新时间:2025-6-24 16:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Cypress Semiconductor Corp
23+/24+
36-BSOJ
8600
只供原装进口公司现货+可订货
CY
17+
TSSOP
6200
100%原装正品现货
CY
24+
SOJ
3600
绝对原装!现货热卖!
CY
24+
SSOP
6980
原装现货,可开13%税票
CYPRESS
23+
SOJ-36
8560
受权代理!全新原装现货特价热卖!
CYPR
23+
SOJ
9526
CYPRESS/赛普拉斯
2223+
SOJ-36
26800
只做原装正品假一赔十为客户做到零风险
CYPRESS
23+
DIP-8
5000
原装正品,假一罚十
CYPR
00+
SOJ
32
原装现货海量库存欢迎咨询
CYPRESS
23+
SOJ
10
原装正品现货

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