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型号	功能描述	生产厂家&企业	LOGO
CY7C1049BV33	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-12VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-12VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-12ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-15VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-15VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-15ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-15ZI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-17VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-17VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-17ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-17ZI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-20VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-20VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-20ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-20ZI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-25VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-25VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-25ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33L-12VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33L-15VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33L-15ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33L-17VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33L-17VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33L-17ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33L-20VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33L-20ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33L-25VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33L-25ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress

CY7C1049BV33产品属性

类型
描述
型号
CY7C1049BV33
制造商
Rochester Electronics LLC
功能描述
4MB(512K X 8)- FAST ASYNCH SRAM - Bulk
制造商
Cypress Semiconductor

CY7C1049BV33供应商更多...

更新时间：2025-8-17 14:54:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市向鸿伟业电子有限公司	CY7C1049BV33-15VIT	CYPRESS/赛普拉斯	2402+	SOJ-36	8324	原装正品!实单价优!	询价
深圳市一线半导体有限公司	CY7C1049BV33-15VC		24+	SOJ	7003		询价
深圳市冠亿通科技有限公司	CY7C1049BV33-15ZC	Cypress	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市纳艾斯科技有限公司	CY7C1049BV33-20VC	CYPRESS	24+	SOJ36	8000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳市赛尔通科技有限公司	CY7C1049BV33-20VC	CYPRESS	23+		6000	原装现货特价	询价
深圳市壹芯创科技有限公司	CY7C1049BV33-20VC	CYPRESS	22+	SOJ	4800	原装现货库存.价格优势!!	询价
深圳市英卓尔科技有限公司	CY7C1049BV33-12ZC	CYPRESS	20+	TSOP	2960	诚信交易大量库存现货	询价
深圳市胜彬电子有限公司	CY7C1049BV33-25VI	CYPRESS	22+	SOJ36	8000	原装正品支持实单	询价
深圳市能元时代电子有限公司	CY7C1049BV33-20VC	CYPRESS	23+	SOJ-36L	12800	公司只有原装欢迎来电咨询。	询价
深圳市威雅利发展有限公司	CY7C1049BV33-20VCT	CYPRESS	101	SOJ-36	2500	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价

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CY7C1049BV33产品属性

CY7C1049BV33供应商更多...

CY7C1049BV33芯片相关品牌

CY7C1049BV33规格书下载地址

CY7C1049BV33参数引脚图相关

CY7C1049BV33数据表相关新闻

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CY7C1061AV33-10ZXI 是由深圳市贸泽微电子有限公司重点推广的一款IC。

CY7C1041CV33-10ZXI

CY7C1049DV33-10ZSXI公司原装现货/长期供应

DdatasheetPDF页码索引