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型号	功能描述	生产厂家企业	LOGO
CY7C1049BV33	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33	512K x 8 Static RAM	INFINEON 英飞凌	INFINEON
CY7C1049BV33-12VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33-12VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33-12ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33-15VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33-15VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33-15ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33-15ZI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33-17VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33-17VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33-17ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33-17ZI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33-20VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33-20VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33-20ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33-20ZI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33-25VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33-25VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33-25ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33L-12VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33L-15VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33L-15ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33L-17VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33L-17VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33L-17ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33L-20VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33L-20ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33L-25VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1049BV33L-25ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS

CY7C1049BV33产品属性

类型
描述
型号
CY7C1049BV33
制造商
Rochester Electronics LLC
功能描述
4MB(512K X 8)- FAST ASYNCH SRAM - Bulk
制造商
Cypress Semiconductor

CY7C1049BV33供应商更多...

更新时间：2026-3-15 22:30:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市纳艾斯科技有限公司	CY7C1049BV33-20VC	CYPRESS	24+	SOJ36	8000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
标准国际(香港)有限公司	CY7C1049BV33-12VC	CY7C1049BV33-12VC	25+	6	6		询价
深圳市胜彬电子有限公司	CY7C1049BV33-12VC	CYPRESS	22+	SOJ36	8000	原装正品支持实单	询价
深圳市冠亿通科技有限公司	CY7C1049BV33L-15VCT	Cypress Semiconductor Corp	24+25+		16500	全新原厂原装现货!受权代理!可送样可提供技术支持!	询价
深圳市壹芯创科技有限公司	CY7C1049BV33-12VC	CYPRESS	22+	SOJ	4800	原装现货库存.价格优势!!	询价
深圳市恒创达实业有限公司	CY7C1049BV33-15ZC	CY	17+	TSSOP	6200	100%原装正品现货	询价
深圳诚思涵科技有限公司	CY7C1049BV33	CYPRESS	18+	TSOP44	85600	保证进口原装可开17%增值税发票	询价
天津市博通航睿技术有限公司	CY7C1049BV33-1	CYPRESS	23+	SOJ-36	7000		询价
深圳市赛尔通科技有限公司	CY7C1049BV33-20VC	CYPRESS	23+		6000	原装现货特价	询价
深圳市能元时代电子有限公司	CY7C1049BV33-10ZC	CY	23+		37079	公司原装现货!主营品牌!可含税欢迎查询	询价

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找IC，尽在114IC

CY7C1049BV33产品属性

CY7C1049BV33供应商更多...

CY7C1049BV33芯片相关品牌

CY7C1049BV33规格书下载地址

CY7C1049BV33参数引脚图相关

CY7C1049BV33数据表相关新闻

CY7C1041GN30-10ZSXIT

CY7C10612DV33-10ZSXI

CY7C1041GN30-10ZSXIT-艾飞琪电子-只做原装原厂渠道-原厂代理

CY7C1061AV33-10ZXI 是由深圳市贸泽微电子有限公司重点推广的一款IC。

CY7C1041CV33-10ZXI

CY7C1049DV33-10ZSXI公司原装现货/长期供应

DdatasheetPDF页码索引