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型号	功能描述	生产厂家企业	LOGO
CY7C1049BV33	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33	512K x 8 Static RAM	Infineon 英飞凌	Infineon
CY7C1049BV33-12VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-12VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-12ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-15VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-15VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-15ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-15ZI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-17VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-17VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-17ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-17ZI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-20VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-20VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-20ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-20ZI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-25VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-25VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33-25ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33L-12VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33L-15VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33L-15ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33L-17VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33L-17VI	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33L-17ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33L-20VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33L-20ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33L-25VC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1049BV33L-25ZC	512K x 8 Static RAM Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress

CY7C1049BV33产品属性

类型
描述
型号
CY7C1049BV33
制造商
Rochester Electronics LLC
功能描述
4MB(512K X 8)- FAST ASYNCH SRAM - Bulk
制造商
Cypress Semiconductor

CY7C1049BV33供应商更多...

更新时间：2025-12-18 9:10:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市联世界科技有限公司	CY7C1049BV3320VC	CYPRUS	24+/25+		19	原装正品现货库存价优	询价
深圳市恒达亿科技有限公司	CY7C1049BV33-20VCT	CYPRESS	25+	QFP	3200	全新原装、诚信经营、公司现货销售!	询价
现代芯城（深圳）科技有限公司	CY7C1049BV33-20VC		24+	N/A	65000	一级代理-主营优势-实惠价格-不悔选择	询价
上海磐岳电子有限公司	CY7C1049BV33-20VC	CYPRESS	2023+		5800	进口原装,现货热卖	询价
上海凌岳电子科技有限公司（上海涵恩科技）	CY7C1049BV33-20VC		2023+		3000	进口原装现货	询价
标准国际(香港)有限公司	CY7C1049BV33-20VC	Cypress	25+		30	公司优势库存热卖中!!	询价
深圳市能创芯电子科技有限公司	CY7C1049BV33-15ZI	CY	23+	TSOP44	3000	原装正品假一罚百!可开增票!	询价
深圳市坤融电子科技有限公司	CY7C1049BV33-12ZC	CYPRESS/赛普拉斯	2025+	TSOP44	5000	原装进口价格优请找坤融电子!	询价
深圳市福田区绿盛电子商行	CY7C1049BV33-20VI	CRYESS	2015+	SOJ	19889	一级代理原装现货,特价热卖!	询价
深圳市昌和盛利电子有限公司	CY7C1049BV33-20VC	CYPR	NEW	SOJ	9526	代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订	询价

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CY7C1049BV33产品属性

CY7C1049BV33供应商更多...

CY7C1049BV33芯片相关品牌

CY7C1049BV33规格书下载地址

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CY7C1061AV33-10ZXI 是由深圳市贸泽微电子有限公司重点推广的一款IC。

CY7C1041CV33-10ZXI

CY7C1049DV33-10ZSXI公司原装现货/长期供应

DdatasheetPDF页码索引