CY7C1049价格

参考价格:¥38.2016

型号:CY7C1049CV33-10VXA 品牌:Cypress 备注:这里有CY7C1049多少钱,2025年最近7天走势,今日出价,今日竞价,CY7C1049批发/采购报价,CY7C1049行情走势销售排行榜,CY7C1049报价。
型号 功能描述 生产厂家 企业 LOGO 操作
CY7C1049

512K x 8 Static RAM

Functional Description The CY7C1049 is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 1210 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW a

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1049

512K x 8 Static RAM

Infineon

英飞凌

512K x 8 Static RAM

Functional Description The CY7C1049 is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 1210 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW a

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description The CY7C1049 is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 1210 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW a

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description The CY7C1049 is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 1210 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW a

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description The CY7C1049 is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 1210 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW a

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description The CY7C1049 is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 1210 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW a

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description The CY7C1049 is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 1210 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW a

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description The CY7C1049 is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 1210 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW a

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description The CY7C1049 is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 1210 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW a

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1049产品属性

  • 类型

    描述

  • 型号

    CY7C1049

  • 制造商

    AZTEC

  • 功能描述

    NEW

更新时间:2025-12-20 17:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS
23+
6000
原装现货特价
CYPERSS
2025+
SOJ
4759
原装进口价格优 请找坤融电子!
CYPRESS/赛普拉斯
06+
SOJ
788
原装现货 价格优势
Cypress(赛普拉斯)
25+
5000
只做原装 假一罚百 可开票 可售样
CYPRESS
SOJ36
1200
专业分销全系列产品!绝对原装正品!量大可订!价格优
CYPRESS
25+
PB-FREE
20
全新原装!优势库存热卖中!
CYPRESS(赛普拉斯)
24+
TSOPII-44
14093
正规渠道,大量现货,只等你来。
CYPRESS
25+
14730
公司原装现货常备库存!
CYPRESS/赛普拉斯
23+
SOJ
18204
原装正品代理渠道价格优势
CY
17+
TSSOP
6200
100%原装正品现货

CY7C1049芯片相关品牌

CY7C1049数据表相关新闻