CY7C1049价格

参考价格:¥38.2016

型号:CY7C1049CV33-10VXA 品牌:Cypress 备注:这里有CY7C1049多少钱,2025年最近7天走势,今日出价,今日竞价,CY7C1049批发/采购报价,CY7C1049行情走势销售排行榜,CY7C1049报价。
型号 功能描述 生产厂家&企业 LOGO 操作
CY7C1049

512Kx8StaticRAM

FunctionalDescription TheCY7C1049isahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —1210mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400µWa

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription TheCY7C1049isahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —1210mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400µWa

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription TheCY7C1049isahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —1210mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400µWa

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription TheCY7C1049isahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —1210mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400µWa

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription TheCY7C1049isahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —1210mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400µWa

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription TheCY7C1049isahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —1210mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400µWa

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription TheCY7C1049isahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —1210mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400µWa

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription TheCY7C1049isahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —1210mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400µWa

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription TheCY7C1049isahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —1210mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400µWa

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(660

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

CY7C1049产品属性

  • 类型

    描述

  • 型号

    CY7C1049

  • 制造商

    AZTEC

  • 功能描述

    NEW

更新时间:2025-6-24 12:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS/赛普拉斯
23+
44-TSOP
90000
只做原装 !全系列供应可长期供货稳定价格优势!
CYPRESS/赛普拉斯
06+
SOJ
788
原装现货 价格优势
CY
23+
SOJ
6680
受权代理!全新原装现货特价热卖!
CYPRESS
23+
6000
原装现货特价
CYPRESS
2014+
14730
公司原装现货常备库存!
CYPRESS
PB-FREE
20
全新原装!优势库存热卖中!
CYPRESS(赛普拉斯)
24+
TSOPII-44
5768
百分百原装正品,可原型号开票
CYPRESS
SOJ36
1200
专业分销全系列产品!绝对原装正品!量大可订!价格优
CYPRESS
25+
原厂封装
10280
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力!
Cypress
24+
TSOP
6800
只做自己库存,全新原装进口正品假一赔百,可开13个点增票

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