型号 功能描述 生产厂家 企业 LOGO 操作
CY7C1049BN

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description The CY7C1049 is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 1210 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW a

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:36-BSOJ(0.400",10.16mm 宽) 包装:托盘 描述:IC SRAM 4MBIT PARALLEL 36SOJ 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:36-BSOJ(0.400",10.16mm 宽) 包装:散装 描述:IC SRAM 4MBIT PARALLEL 36SOJ 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:293.91 Kbytes Page:9 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512 K 횞 8) Static RAM TTL-compatible inputs and outputs

文件:330.03 Kbytes Page:12 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1049BN产品属性

  • 类型

    描述

  • 型号

    CY7C1049BN

  • 制造商

    Rochester Electronics LLC

  • 制造商

    Cypress Semiconductor

更新时间:2025-12-21 11:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
24+
N/A
52000
一级代理-主营优势-实惠价格-不悔选择
CYPRESS/赛普拉斯
2025+
SOJ36
2500
原装进口价格优 请找坤融电子!
CYPRESS/赛普拉斯
2447
SOJ36
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
Cypress
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
CYPRESS/赛普拉斯
23+
SOJ36
50000
全新原装正品现货,支持订货
Cypress
23+
36-SOJ
73390
专业分销产品!原装正品!价格优势!
Cypress
25+
电联咨询
7800
公司现货,提供拆样技术支持
Cypress
22+
36SOJ
9000
原厂渠道,现货配单
CYPRESS(赛普拉斯)
24+
BSOJ-36
14093
正规渠道,大量现货,只等你来。
CYPRESS/赛普拉斯
24+
SOJ36
21574
郑重承诺只做原装进口现货

CY7C1049BN数据表相关新闻