型号 功能描述 生产厂家&企业 LOGO 操作
CY7C1049BN

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription TheCY7C1049isahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=15ns •Lowactivepower —1210mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400µWa

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049BNV33isahigh-performanceCMOSStaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —504mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

封装/外壳:36-BSOJ(0.400",10.16mm 宽) 包装:托盘 描述:IC SRAM 4MBIT PARALLEL 36SOJ 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:36-BSOJ(0.400",10.16mm 宽) 包装:散装 描述:IC SRAM 4MBIT PARALLEL 36SOJ 集成电路(IC) 存储器

ETC

知名厂家

512Kx8StaticRAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

FunctionalDescription[1] TheCY7C1049Bisahigh-performanceCMOSstaticRAMorganizedas524,288wordsby8bits. Features •Highspeed —tAA=12ns •Lowactivepower —1320mW(max.) •LowCMOSstandbypower(CommercialLversion) —2.75mW(max.) •2.0VDataRetention(400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

512Kx8StaticRAM

文件:293.91 Kbytes Page:9 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

4-Mbit(512K횞8)StaticRAMTTL-compatibleinputsandoutputs

文件:330.03 Kbytes Page:12 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

CY7C1049BN产品属性

  • 类型

    描述

  • 型号

    CY7C1049BN

  • 制造商

    Rochester Electronics LLC

  • 制造商

    Cypress Semiconductor

更新时间:2025-6-24 15:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Cypress
23+
SOP/QFP
3200
全新原装、诚信经营、公司现货销售!
CYPRESS(赛普拉斯)
24+
BSOJ-36
14093
正规渠道,大量现货,只等你来。
CYPRESS
22+
SOJ
8000
原装正品支持实单
Cypress Semiconductor Corp
23+
36-SOJ
7300
专注配单,只做原装进口现货
Cypress Semiconductor Corp
23+
36-SOJ
7300
专注配单,只做原装进口现货
ADI
23+
SOJ36
7000
CYPRESS/赛普拉斯
2447
SOJ36
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
CYPRESS/赛普拉斯
24+
SOJ36
21574
郑重承诺只做原装进口现货
Cypress Semiconductor Corp
24+
36-SOJ
56200
一级代理/放心采购
Cypress
22+
36SOJ
9000
原厂渠道,现货配单

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