型号 功能描述 生产厂家&企业 LOGO 操作
CY7C1049BN

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description The CY7C1049 is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 1210 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW a

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (66

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:36-BSOJ(0.400",10.16mm 宽) 包装:托盘 描述:IC SRAM 4MBIT PARALLEL 36SOJ 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:36-BSOJ(0.400",10.16mm 宽) 包装:散装 描述:IC SRAM 4MBIT PARALLEL 36SOJ 集成电路(IC) 存储器

ETC

知名厂家

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:443.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

Functional Description[1] The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 8 Static RAM

文件:293.91 Kbytes Page:9 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512 K 횞 8) Static RAM TTL-compatible inputs and outputs

文件:330.03 Kbytes Page:12 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1049BN产品属性

  • 类型

    描述

  • 型号

    CY7C1049BN

  • 制造商

    Rochester Electronics LLC

  • 制造商

    Cypress Semiconductor

更新时间:2025-8-15 8:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS/赛普拉斯
24+
SOJ36
21574
郑重承诺只做原装进口现货
CYPRES
24+
QFN
8265
公司现货库存,支持实单
CYPRESS/赛普拉斯
24+
NA/
3750
原装现货,当天可交货,原型号开票
CYPRESS/赛普拉斯
25+
SOJ36
500
原装正品,假一罚十!
CYPRESS
2138+
原厂标准封装
8960
代理CYPRESS全系列芯片,原装现货
CYPRESS
21+
SOJ36
246
原装现货假一赔十
Cypress Semiconductor Corp
23+
36-SOJ
7300
专注配单,只做原装进口现货
Cypress
25+
电联咨询
7800
公司现货,提供拆样技术支持
CYPRESS
22+
SOJ
8000
原装正品支持实单
Cypress
25+
SOP/QFP
3200
全新原装、诚信经营、公司现货销售!

CY7C1049BN数据表相关新闻