4Mb EXCELON??Ultra Ferroelectric RAM (F-RAM)

Features • 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see Data retention and endurance on page 98) - Infineon instant non-volatile write technology - Adva

4Mb EXCELON™ Ultra Ferroelectric RAM (F-RAM) Serial (quad SPI), 512K × 8, 108 MHz, industrial

Features • 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 101) - Infineon instant non-volatile write technology - A

Excelon??Ultra 4-Mbit (512K 횞 8) Quad SPI F-RAM

文件：1.51596 Mbytes Page：90 Pages

4Mb EXCELON™ Ultra Ferroelectric RAM (F-RAM) Serial (quad SPI), 512K × 8, 108 MHz, industrial

Features • 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 101) - Infineon instant non-volatile write technology - A

封装/外壳：8-UQFN 包装：卷带（TR） 描述：IC FRAM 4MBIT SPI/QUAD I/O 8GQFN 集成电路（IC） 存储器

F-RAM（铁电RAM）

4Mb 3.0V 工业级 108MHz QSPI EXCELON ™ F-RAM，8 引脚 SOIC 封装

封装/外壳：8-SOIC（0.209"，5.30mm 宽） 包装：托盘 描述：IC FRAM 4MBIT 108MHZ 8SOIC 集成电路（IC） 存储器

F-RAM（铁电RAM）

4Mb EXCELON™ LP Ferroelectric RAM (F-RAM)

Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology

4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial

Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv

4-Mbit (512 K 횞 8) Serial (SPI) F-RAM

文件：847.02 Kbytes Page：22 Pages

4-Mbit (512 K 횞 8) Serial (SPI) F-RAM

文件：847.02 Kbytes Page：22 Pages

4-Mbit (512 K 횞 8) Serial (SPI) F-RAM

文件：847.02 Kbytes Page：22 Pages