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CY15B104QSN_V01中文资料
CY15B104QSN_V01数据手册规格书PDF详情
Features
• 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512K × 8
- Virtually unlimited endurance of 100 trillion (1014) read/write cycles
- 151-year data retention (see “Data retention and endurance” on page 101)
- Infineon instant non-volatile write technology
- Advanced high-reliability ferroelectric process
• Single and multi I/O serial peripheral interface (SPI)
- Serial bus interface SPI protocols
- Supports SPI mode 0 (0, 0) and mode 3 (1, 1) for all SDR mode transfers
- Supports SPI mode 0 (0, 0) for all DDR mode transfers
- Extended I/O SPI protocols
- Dual SPI (DPI) protocols
- Quad SPI (QPI) protocols
• SPI clock frequency
- Up to 108-MHz frequency SPI single data rate (SDR)
- Up to 54-MHz frequency SPI double data rate (DDR)
• Execute-in-place (XIP) for memory read/write
• Write protection, data security, and data integrity
• Hardware protection using the write protect (WP) pin
• Software block protection
• Embedded error correction code (ECC) and cyclic redundancy check (CRC) for enhanced data integrity
- ECC detects and corrects 1-bit error. If a 2-bit error occurs, it does not correct but reports through the ECC
status register
- CRC detects any accidental change to raw data
• Extended electronic signatures
- Device ID includes manufacturer ID and product ID
- Unique ID
- User programmable Serial Number
• Dedicated 256-byte special sector F-RAM
- Dedicated special sector write and read
- Content can survive up to three standard reflow cycles
• Low-power consumption at high speed
- 10 mA (typ) active current for 108 MHz SPI SDR
- 16 mA (typ) active current for 108 MHz QSPI SDR and 54-MHz QSPI DDR
- 110 μA (typ) standby current
- 0.80 μA (typ) deep power down mode current
- 0.1 μA (typ) hibernate mode current
• Low-voltage operation:
- CY15V104QSN: VDD = 1.71 V to 1.89 V
- CY15B104QSN: VDD = 1.8 V to 3.6 V
• Operating temperature: –40°C to +85°C
• Packages
- 8-pin small outline integrated circuit (SOIC) package
- 8-pin grid-array quad flat no-lead (GQFN) package (NRND)[1]
- 8-pin ultra-thin fine-pitch land grid array (UFLGA) package
• Restriction of hazardous substances (RoHS) compliant
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON |
25+ |
原封装 |
9960 |
郑重承诺只做原装进口货 |
|||
INFINEON/英飞凌 |
23+ |
PG-VQFN-8 |
28611 |
为终端用户提供优质元器件 |
|||
Infineon Technologies |
2024 |
940 |
全新、原装 |
||||
Cypress(赛普拉斯) |
2511 |
- |
4945 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
Cypress |
22+ |
8SOIC |
9000 |
原厂渠道,现货配单 |
|||
Cypress |
23+ |
8SOIC |
9000 |
原装正品,支持实单 |
|||
Cypress |
Cypress专业分销 |
40 |
Cypress一级分销,原装原盒原包装! |
||||
CypressSemiconductor |
24+ |
SMD |
15600 |
F-RAMF-RAMMemorySerial |
|||
CYPRESS |
25+23+ |
SOP8 |
32411 |
绝对原装正品全新进口深圳现货 |
|||
CYPRESS/赛普拉斯 |
1948+ |
SOIC-8 |
6852 |
只做原装正品现货!或订货假一赔十! |
CY15B104QSN_V01 资料下载更多...
CY15B104QSN_V01 芯片相关型号
- 1927221
- ATS-20E-205-C1-R0
- ATS-20E-206-C1-R0
- B36H3
- B36J3
- B39D3
- B3SD3
- B3SK3
- B3SK3RGB-F6C-0001HO
- BC308
- CC1352P
- CY15B104QSN
- GMRT108
- GMRT112
- GMRT116
- GMRTD08
- GMRTE02
- GMRTE04
- GMRTE04.003100
- GMRTE06
- GMRTE08
- GMRTE12
- GMRTE16
- GMRTE24
- H5G0.75L
- H5G0.75L-0101000M
- H5G0.75L-010200M
- H5G0.75L-010305M
- H5G0.75L-010500M
- SMF6.0A
Datasheet数据表PDF页码索引
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Infineon Technologies AG 英飞凌科技股份公司
英飞凌科技股份公司(Infineon Technologies AG)是一家全球领先的半导体制造商,成立于1999年,总部位于德国。英飞凌专注于提供高效能和高可靠性的半导体解决方案,广泛应用于汽车、工业、通信以及消费电子等多个领域。公司的产品涵盖了功率半导体、微控制器、安全芯片和传感器等多种类型,致力于满足客户在能效、节能和安全方面的需求。 在汽车电子领域,英飞凌是重要的市场参与者,提供各种关键的解决方案,例如用于电动汽车和混合动力汽车的功率管理系统。此外,英飞凌还专注于提高工业自动化和智能家居系统的性能,通过其先进的传感器和控制技术促进智能制造和数字化转型。 公司在全球范围内拥有多个研发和制