位置：首页 > IC中文资料 > CY15B104QN
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CY15B104QN | 4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 |   | |
CY15B104QN | 4Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, 50 MHz, automotive grade 3 Features • 4Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advan | Infineon 英飞凌 | | |
4Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, 50 MHz, automotive grade 3 Features • 4Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advan | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, 50 MHz, automotive grade 3 Features • 4Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advan | Infineon 英飞凌 | | ||
4Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, 50 MHz, automotive grade 3 Features • 4Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advan | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
F-RAM（铁电RAM） | Infineon 英飞凌 | | ||
4Mb 3.3V Commercial 20MHz SPI EXCELON™ F-RAM in 8-pin GQFN | Infineon 英飞凌 | | ||
4Mb 3.3V Commercial 20MHz SPI EXCELON™ F-RAM in 8-pin GQFN | Infineon 英飞凌 | | ||
封装/外壳：8-UQFN 包装：卷带（TR） 描述：IC FRAM 4MBIT SPI 20MHZ 8GQFN 集成电路（IC） 存储器 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
封装/外壳：8-UQFN 包装：托盘 描述：IC FRAM 4MBIT SPI 50MHZ 8GQFN 集成电路（IC） 存储器 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology | Infineon 英飞凌 | | ||
4-Mbit (512 K 횞 8) Serial (SPI) F-RAM 文件：847.02 Kbytes Page：22 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8) Serial (SPI) F-RAM 文件：847.02 Kbytes Page：22 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8) Serial (SPI) F-RAM 文件：847.02 Kbytes Page：22 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CYPRESS(赛普拉斯) |
24+ |
SOP8 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
Cypress |
24+ |
N/A |
16500 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
CYPRESS |
1743 |
SOP |
5 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Cypress |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
CYPRESS/赛普拉斯 |
24+ |
SOP |
37308 |
郑重承诺只做原装进口现货 |
|||
INFINEON |
25+ |
SOP-8 |
370 |
原装进口支持检测 |
|||
Infineon Technologies |
2年内批号 |
8-GQFN(3,23x3,28) |
4800 |
只供原装进口公司现货+可订货 |
|||
SPANSION(飞索) |
2447 |
GQFN-8(3.23x3.28) |
315000 |
490个/托盘一级代理专营品牌!原装正品,优势现货,长 |
|||
Cypress(赛普拉斯) |
25+ |
- |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
CYPRESS |
24+ |
con |
10000 |
查现货到京北通宇商城 |
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2019-10-18
DdatasheetPDF页码索引
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