位置：首页 > IC中文资料 > CY15B104QN
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CY15B104QN | 4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 |   | |
CY15B104QN | 4Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, 50 MHz, automotive grade 3 Features • 4Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advan | Infineon 英飞凌 | | |
4Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, 50 MHz, automotive grade 3 Features • 4Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advan | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, 50 MHz, automotive grade 3 Features • 4Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advan | Infineon 英飞凌 | | ||
4Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, 50 MHz, automotive grade 3 Features • 4Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advan | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv | Infineon 英飞凌 | | ||
F-RAM（铁电RAM） | Infineon 英飞凌 | | ||
4Mb 3.3V Commercial 20MHz SPI EXCELON™ F-RAM in 8-pin GQFN | Infineon 英飞凌 | | ||
F-RAM（铁电RAM） | Infineon 英飞凌 | | ||
封装/外壳：8-UQFN 包装：卷带（TR） 描述：IC FRAM 4MBIT SPI 20MHZ 8GQFN 集成电路（IC） 存储器 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
封装/外壳：8-SOIC（0.209"，5.30mm 宽） 包装：管件 描述：IC FRAM 4MBIT SPI 50MHZ 8SOIC 集成电路（IC） 存储器 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology | Infineon 英飞凌 | | ||
4-Mbit (512 K 횞 8) Serial (SPI) F-RAM 文件：847.02 Kbytes Page：22 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8) Serial (SPI) F-RAM 文件：847.02 Kbytes Page：22 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (512 K 횞 8) Serial (SPI) F-RAM 文件：847.02 Kbytes Page：22 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SPANSION(飞索) |
2021+ |
GQFN-8(3.23x3.28) |
499 |
||||
Infineon Technologies |
2年内批号 |
8-GQFN(3,23x3,28) |
4800 |
只供原装进口公司现货+可订货 |
|||
Cypress |
24+ |
N/A |
16500 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
CYPRESS/赛普拉斯 |
23+ |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
INFINEON/英飞凌 |
23+ |
PG-VQFN-8 |
28611 |
为终端用户提供优质元器件 |
|||
SPANSION(飞索) |
2447 |
GQFN-8(3.23x3.28) |
315000 |
490个/托盘一级代理专营品牌!原装正品,优势现货,长 |
|||
Cypress |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
Cypress |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
Infineon |
24+ |
SOIC-8 |
5000 |
原厂原装，价格优势，欢迎洽谈！ |
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2019-10-18
DdatasheetPDF页码索引
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