型号 功能描述 生产厂家 企业 LOGO 操作
CY15B104QI

4Mb EXCELON™ LP Ferroelectric RAM (F-RAM)

Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology

Infineon

英飞凌

4Mb EXCELON™ LP Ferroelectric RAM (F-RAM)

Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology

Infineon

英飞凌

4Mb EXCELON™ LP Ferroelectric RAM (F-RAM)

Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology

Infineon

英飞凌

4Mb EXCELON™ LP Ferroelectric RAM (F-RAM)

Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology

Infineon

英飞凌

4Mb EXCELON™ LP Ferroelectric RAM (F-RAM)

Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology

Infineon

英飞凌

4Mb EXCELON™ LP Ferroelectric RAM (F-RAM)

Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology

Infineon

英飞凌

4Mb EXCELON™ LP Ferroelectric RAM (F-RAM)

Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology

Infineon

英飞凌

封装/外壳:8-UQFN 包装:管件 描述:IC FRAM 4MBIT SPI 20MHZ 8GQFN 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4Mb 3.3V Commercial 20MHz SPI EXCELON™ F-RAM in 8-pin GQFN with Inrush current control

Infineon

英飞凌

F-RAM(铁电RAM)

Infineon

英飞凌

封装/外壳:8-UQFN 包装:托盘 描述:IC FRAM 4MBIT SPI 20MHZ 8GQFN 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

F-RAM(铁电RAM)

Infineon

英飞凌

4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial

Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv

Infineon

英飞凌

4-Mbit (512 K 횞 8) Serial (SPI) F-RAM

文件:847.02 Kbytes Page:22 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512 K 횞 8) Serial (SPI) F-RAM

文件:847.02 Kbytes Page:22 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (512 K 횞 8) Serial (SPI) F-RAM

文件:847.02 Kbytes Page:22 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

更新时间:2026-1-1 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SPANSION(飞索)
2447
GQFN-8(3.23x3.28)
315000
490个/托盘一级代理专营品牌!原装正品,优势现货,长
CYPRESS/赛普拉斯
23+
SOP-8
5000
专注配单,只做原装进口现货
ADI
23+
SOP-8
7000
Cypress(赛普拉斯)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
INFINEON
25+
原封装
9960
郑重承诺只做原装进口货
Cypress
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
CY
1813
86
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CYPRESS
24+
con
10000
查现货到京北通宇商城
CONEXANT
24+
QFP100
18766
公司现货库存,支持实单
CYPRESS/赛普拉斯
23+
SOP8
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、

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