| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CY15B104Q | 4-Mbit(512K횞8)Serial(SPI)F-RAM 文件：847.02 Kbytes Page：22 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 |  |   |
4MbEXCELON™LPFerroelectricRAM(F-RAM) Features •4-Mbitferroelectricrandomaccessmemory(EXCELON™LPF-RAM)logicallyorganizedas512K×8 -Virtuallyunlimitedendurance1000trillion(1015)read/writes -151-yeardataretention(See“Dataretentionandendurance”onpage26) -Infineoninstantnon-volatilewritetechnology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
4MbEXCELON™LPFerroelectricRAM(F-RAM) Features •4-Mbitferroelectricrandomaccessmemory(EXCELON™LPF-RAM)logicallyorganizedas512K×8 -Virtuallyunlimitedendurance1000trillion(1015)read/writes -151-yeardataretention(See“Dataretentionandendurance”onpage26) -Infineoninstantnon-volatilewritetechnology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
4MbEXCELON™LPFerroelectricRAM(F-RAM) Features •4-Mbitferroelectricrandomaccessmemory(EXCELON™LPF-RAM)logicallyorganizedas512K×8 -Virtuallyunlimitedendurance1000trillion(1015)read/writes -151-yeardataretention(See“Dataretentionandendurance”onpage26) -Infineoninstantnon-volatilewritetechnology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
4MbEXCELON™LPFerroelectricRAM(F-RAM) Features •4-Mbitferroelectricrandomaccessmemory(EXCELON™LPF-RAM)logicallyorganizedas512K×8 -Virtuallyunlimitedendurance1000trillion(1015)read/writes -151-yeardataretention(See“Dataretentionandendurance”onpage26) -Infineoninstantnon-volatilewritetechnology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
4MbEXCELON™LPFerroelectricRAM(F-RAM) Features •4-Mbitferroelectricrandomaccessmemory(EXCELON™LPF-RAM)logicallyorganizedas512K×8 -Virtuallyunlimitedendurance1000trillion(1015)read/writes -151-yeardataretention(See“Dataretentionandendurance”onpage26) -Infineoninstantnon-volatilewritetechnology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
4MbEXCELON™LPFerroelectricRAM(F-RAM) Features •4-Mbitferroelectricrandomaccessmemory(EXCELON™LPF-RAM)logicallyorganizedas512K×8 -Virtuallyunlimitedendurance1000trillion(1015)read/writes -151-yeardataretention(See“Dataretentionandendurance”onpage26) -Infineoninstantnon-volatilewritetechnology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
4MbEXCELON™LPFerroelectricRAM(F-RAM) Features •4-Mbitferroelectricrandomaccessmemory(EXCELON™LPF-RAM)logicallyorganizedas512K×8 -Virtuallyunlimitedendurance1000trillion(1015)read/writes -151-yeardataretention(See“Dataretentionandendurance”onpage26) -Infineoninstantnon-volatilewritetechnology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
4-MbEXCELON™LPFerroelectricRAM(F-RAM)Serial(SPI),512K×8,industrial Features •4-Mbferroelectricrandomaccessmemory(F-RAM)logicallyorganizedas512K×8 -Virtuallyunlimitedenduranceof1000trillion(1015)read/writecycles -151-yeardataretention(See“Dataretentionandendurance”onpage27) -Infineoninstantnon-volatilewritetechnology -Adv | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
4-MbEXCELON™LPFerroelectricRAM(F-RAM)Serial(SPI),512K×8,industrial Features •4-Mbferroelectricrandomaccessmemory(F-RAM)logicallyorganizedas512K×8 -Virtuallyunlimitedenduranceof1000trillion(1015)read/writecycles -151-yeardataretention(See“Dataretentionandendurance”onpage27) -Infineoninstantnon-volatilewritetechnology -Adv | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
4-MbEXCELON™LPFerroelectricRAM(F-RAM)Serial(SPI),512K×8,industrial Features •4-Mbferroelectricrandomaccessmemory(F-RAM)logicallyorganizedas512K×8 -Virtuallyunlimitedenduranceof1000trillion(1015)read/writecycles -151-yeardataretention(See“Dataretentionandendurance”onpage27) -Infineoninstantnon-volatilewritetechnology -Adv | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
4-MbEXCELON™LPFerroelectricRAM(F-RAM)Serial(SPI),512K×8,industrial Features •4-Mbferroelectricrandomaccessmemory(F-RAM)logicallyorganizedas512K×8 -Virtuallyunlimitedenduranceof1000trillion(1015)read/writecycles -151-yeardataretention(See“Dataretentionandendurance”onpage27) -Infineoninstantnon-volatilewritetechnology -Adv | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
4-MbEXCELON™LPFerroelectricRAM(F-RAM)Serial(SPI),512K×8,industrial Features •4-Mbferroelectricrandomaccessmemory(F-RAM)logicallyorganizedas512K×8 -Virtuallyunlimitedenduranceof1000trillion(1015)read/writecycles -151-yeardataretention(See“Dataretentionandendurance”onpage27) -Infineoninstantnon-volatilewritetechnology -Adv | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
4-MbEXCELON™LPFerroelectricRAM(F-RAM)Serial(SPI),512K×8,industrial Features •4-Mbferroelectricrandomaccessmemory(F-RAM)logicallyorganizedas512K×8 -Virtuallyunlimitedenduranceof1000trillion(1015)read/writecycles -151-yeardataretention(See“Dataretentionandendurance”onpage27) -Infineoninstantnon-volatilewritetechnology -Adv | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
4-MbEXCELON™LPFerroelectricRAM(F-RAM)Serial(SPI),512K×8,industrial Features •4-Mbferroelectricrandomaccessmemory(F-RAM)logicallyorganizedas512K×8 -Virtuallyunlimitedenduranceof1000trillion(1015)read/writecycles -151-yeardataretention(See“Dataretentionandendurance”onpage27) -Infineoninstantnon-volatilewritetechnology -Adv | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
4-MbEXCELON™LPFerroelectricRAM(F-RAM)Serial(SPI),512K×8,industrial Features •4-Mbferroelectricrandomaccessmemory(F-RAM)logicallyorganizedas512K×8 -Virtuallyunlimitedenduranceof1000trillion(1015)read/writecycles -151-yeardataretention(See“Dataretentionandendurance”onpage27) -Infineoninstantnon-volatilewritetechnology -Adv | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
4-MbEXCELON™LPFerroelectricRAM(F-RAM)Serial(SPI),512K×8,industrial Features •4-Mbferroelectricrandomaccessmemory(F-RAM)logicallyorganizedas512K×8 -Virtuallyunlimitedenduranceof1000trillion(1015)read/writecycles -151-yeardataretention(See“Dataretentionandendurance”onpage27) -Infineoninstantnon-volatilewritetechnology -Adv | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
4-MbEXCELON™LPFerroelectricRAM(F-RAM)Serial(SPI),512K×8,industrial Features •4-Mbferroelectricrandomaccessmemory(F-RAM)logicallyorganizedas512K×8 -Virtuallyunlimitedenduranceof1000trillion(1015)read/writecycles -151-yeardataretention(See“Dataretentionandendurance”onpage27) -Infineoninstantnon-volatilewritetechnology -Adv | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
4-MbEXCELON™LPFerroelectricRAM(F-RAM)Serial(SPI),512K×8,industrial Features •4-Mbferroelectricrandomaccessmemory(F-RAM)logicallyorganizedas512K×8 -Virtuallyunlimitedenduranceof1000trillion(1015)read/writecycles -151-yeardataretention(See“Dataretentionandendurance”onpage27) -Infineoninstantnon-volatilewritetechnology -Adv | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
4-MbEXCELON™LPFerroelectricRAM(F-RAM)Serial(SPI),512K×8,industrial Features •4-Mbferroelectricrandomaccessmemory(F-RAM)logicallyorganizedas512K×8 -Virtuallyunlimitedenduranceof1000trillion(1015)read/writecycles -151-yeardataretention(See“Dataretentionandendurance”onpage27) -Infineoninstantnon-volatilewritetechnology -Adv | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
4-MbEXCELON™LPFerroelectricRAM(F-RAM)Serial(SPI),512K×8,industrial Features •4-Mbferroelectricrandomaccessmemory(F-RAM)logicallyorganizedas512K×8 -Virtuallyunlimitedenduranceof1000trillion(1015)read/writecycles -151-yeardataretention(See“Dataretentionandendurance”onpage27) -Infineoninstantnon-volatilewritetechnology -Adv | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
4MbEXCELON??UltraFerroelectricRAM(F-RAM) Features •4-Mbitferroelectricrandomaccessmemory(F-RAM)logicallyorganizedas512K×8 -Virtuallyunlimitedenduranceof100trillion(1014)read/writecycles -151-yeardataretention(seeDataretentionandenduranceonpage98) -Infineoninstantnon-volatilewritetechnology -Adva | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
封装/外壳：8-UQFN 包装：托盘 描述：IC FRAM 4MBIT SPI 20MHZ 8GQFN 集成电路（IC） 存储器 | CYP Cypress Semiconductor Corp |  | | |
4-Mbit(512K횞8)Serial(SPI)F-RAM 文件：847.02 Kbytes Page：22 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
封装/外壳：8-WDFN 裸露焊盘 包装：管件 描述：IC FRAM 4MBIT SPI 40MHZ 8TDFN 集成电路（IC） 存储器 | CYP Cypress Semiconductor Corp | | | |
4-Mbit(512K횞8)Serial(SPI)F-RAM 文件：847.02 Kbytes Page：22 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
Excelon??Ultra4-Mbit(512K횞8)QuadSPIF-RAM 文件：1.51596 Mbytes Page：90 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4-Mbit(512K횞8)Serial(SPI)F-RAM 文件：847.02 Kbytes Page：22 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
4-Mbit(512K횞8)Serial(SPI)F-RAM 文件：847.02 Kbytes Page：22 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CY |
1813 |
86 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
CYPRESS |
23+ |
NA |
39140 |
热卖原装进口 |
|||
CYPRESS/赛普拉斯 |
23+ |
SOIC-8 |
15000 |
全新原装现货,假一赔十 |
|||
CYPRESS/赛普 |
22+ |
1000000 |
|||||
CYPRESS/赛普拉斯 |
22+ |
DIP8 |
12800 |
本公司只做进口原装!优势低价出售! |
|||
CYPRESS |
24+ |
SOP8 |
6560 |
全新原装正品现货,以优势说话 ! |
|||
CYPRESS/赛普拉斯 |
23+ |
8-UQFN |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
CYPRESS |
23+ |
SOP8 |
8500 |
只做原装正品现货或订货假一赔十! |
|||
CYPRESS(赛普拉斯) |
23+ |
SOP-8 |
2317 |
特价优势库存质量保证稳定供货 |
|||
CYPRESS |
23+ |
原厂原封 |
1200 |
100%原装正品,特价销售 |
CY15B104Q芯片相关品牌
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DdatasheetPDF页码索引
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