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型号	功能描述	生产厂家企业	LOGO
CY15B104Q	4-Mbit (512 K 횞 8) Serial (SPI) F-RAM 文件：847.02 Kbytes Page：22 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY15B104QI	4Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology	Infineon 英飞凌	Infineon
CY15B104QI-20BFXI	4Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology	Infineon 英飞凌	Infineon
CY15B104QI-20BFXIT	4Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology	Infineon 英飞凌	Infineon
CY15B104QI-20LPXC	4Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology	Infineon 英飞凌	Infineon
CY15B104QI-20LPXCT	4Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology	Infineon 英飞凌	Infineon
CY15B104QI-20LPXI	4Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology	Infineon 英飞凌	Infineon
CY15B104QI-20LPXIT	4Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Features • 4-Mbit ferroelectric random access memory (EXCELON™ LP F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology	Infineon 英飞凌	Infineon
CY15B104QN	4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv	Infineon 英飞凌	Infineon
CY15B104QN	4Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, 50 MHz, automotive grade 3 Features • 4Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advan	Infineon 英飞凌	Infineon
CY15B104QN_V01	4Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, 50 MHz, automotive grade 3 Features • 4Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advan	Infineon 英飞凌	Infineon
CY15B104QN-20BFXI	4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv	Infineon 英飞凌	Infineon
CY15B104QN-20BFXIT	4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv	Infineon 英飞凌	Infineon
CY15B104QN-20LPXC	4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv	Infineon 英飞凌	Infineon
CY15B104QN-20LPXCT	4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv	Infineon 英飞凌	Infineon
CY15B104QN-20LPXI	4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv	Infineon 英飞凌	Infineon
CY15B104QN-20LPXIT	4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv	Infineon 英飞凌	Infineon
CY15B104QN-50BFXI	4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv	Infineon 英飞凌	Infineon
CY15B104QN-50BFXIT	4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv	Infineon 英飞凌	Infineon
CY15B104QN-50LPXI	4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv	Infineon 英飞凌	Infineon
CY15B104QN-50LPXIT	4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv	Infineon 英飞凌	Infineon
CY15B104QN-50SXA	4Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, 50 MHz, automotive grade 3 Features • 4Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advan	Infineon 英飞凌	Infineon
CY15B104QN-50SXAT	4Mb EXCELON™ Auto Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, 50 MHz, automotive grade 3 Features • 4Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advan	Infineon 英飞凌	Infineon
CY15B104QN-50SXI	4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv	Infineon 英飞凌	Infineon
CY15B104QN-50SXIT	4-Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 512K × 8, industrial Features • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Adv	Infineon 英飞凌	Infineon
CY15B104QSN	4Mb EXCELON™ Ultra Ferroelectric RAM (F-RAM) Serial (quad SPI), 512K × 8, 108 MHz, industrial Features • 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 101) - Infineon instant non-volatile write technology - A	Infineon 英飞凌	Infineon
CY15B104QSN	4Mb EXCELON??Ultra Ferroelectric RAM (F-RAM) Features • 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see Data retention and endurance on page 98) - Infineon instant non-volatile write technology - Adva	Infineon 英飞凌	Infineon
CY15B104QSN_V01	4Mb EXCELON™ Ultra Ferroelectric RAM (F-RAM) Serial (quad SPI), 512K × 8, 108 MHz, industrial Features • 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 101) - Infineon instant non-volatile write technology - A	Infineon 英飞凌	Infineon
CY15B104QI-20LPXC	4Mb 3.3V Commercial 20MHz SPI EXCELON™ F-RAM in 8-pin GQFN with Inrush current control	Infineon 英飞凌	Infineon
CY15B104QI-20LPXCT	F-RAM（铁电RAM）	Infineon 英飞凌	Infineon
CY15B104QI-20LPXI	封装/外壳：8-UQFN 包装：托盘描述：IC FRAM 4MBIT SPI 20MHZ 8GQFN 集成电路（IC）存储器	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY15B104QI-20LPXIT	F-RAM（铁电RAM）	Infineon 英飞凌	Infineon
CY15B104Q-LHXI	封装/外壳：8-WDFN 裸露焊盘包装：管件描述：IC FRAM 4MBIT SPI 40MHZ 8TDFN 集成电路（IC）存储器	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY15B104Q-LHXI	4-Mbit (512 K 횞 8) Serial (SPI) F-RAM 文件：847.02 Kbytes Page：22 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY15B104Q-LHXIT	4-Mbit (512 K 횞 8) Serial (SPI) F-RAM 文件：847.02 Kbytes Page：22 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY15B104QSN	Excelon??Ultra 4-Mbit (512K 횞 8) Quad SPI F-RAM 文件：1.51596 Mbytes Page：90 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY15B104Q-SXI	4-Mbit (512 K 횞 8) Serial (SPI) F-RAM 文件：847.02 Kbytes Page：22 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY15B104Q-SXIT	4-Mbit (512 K 횞 8) Serial (SPI) F-RAM 文件：847.02 Kbytes Page：22 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress

CY15B104Q供应商更多...

更新时间：2025-12-31 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	CY15B104QSN-108SXIT	CYPRESS(赛普拉斯)	24+	SOP-8	6473	百分百原装正品,可原型号开票	询价
深圳市金芯世纪电子有限公司	CY15B104Q-SXI	CYPRESS/赛普	22+		1000000		询价
中天科工半导体（深圳）有限公司	CY15B104Q-SXI	CYPRESS/赛普拉斯	25+	SOP-8	32360	CYPRESS/赛普拉斯全新特价CY15B104Q-SXI即刻询购立享优惠#长期有货	询价
深圳市冠亿通科技有限公司	CY15B104Q-LHXIES	Cypress(赛普拉斯)	25+		5000	只做原装假一罚百可开票可售样	询价
柒号芯城电子商务(深圳)有限公司	CY15B104Q-SXI	CYPRESS	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市拓亿芯电子有限公司	CY15B104Q-SXI	CYPRESS/赛普拉斯	25+	SOIC-8	15000	全新原装现货,假一赔十	询价
深圳市高捷芯城科技有限公司	CY15B104QSN-108SXIT	CYPRESS(赛普拉斯)	24+	SOP-8	2317	特价优势库存质量保证稳定供货	询价
深圳市中联芯电子有限公司	CY15B104Q-SXI	CYPRESS	24+	SOIC-8	2820	只做原装有挂有货假一赔十	询价
深圳市东来宝电子科技有限公司	CY15B104Q-LHXIT	Infineon	24+	DFN8	9620	郑重承诺只做原装进口现货	询价
深圳市勤思达科技有限公司	CY15B104Q-LHXIT	CYPRESS	2023+	QFN8	3000	全网最低/原装现货	询价

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CY15B104Q芯片相关品牌

CY15B104Q规格书下载地址

CY15B104Q参数引脚图相关

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CY15B102Q-SXM百分百原装，等你来

CY22150FZXC 全新原装正品 现货

CY15B108QN-40LPXI

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CY10C680J，CY10C6R2J，CY10C750J，CY10C820J，CY10C910J

CY14B108N-BA25XI进口原装，主营军工级IC

DdatasheetPDF页码索引

CY22150FZXC 全新原装正品现货

CY2071ASC-198 原装正品贸泽微优势供应