位置：首页 > IC中文资料 > CSD85302LIC
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET 1 Features 1• Common Drain Configuration • Low On-Resistance • Small Footprint of 1.35 mm × 1.35 mm • Pb Free and Halogen Free • RoHS Compliant • ESD HBM Protection >2.5 kV 2 Applications • USB Type-C/PD • Battery Management • Battery Protection 3 Description This 20 V, 18.7 mΩ, 1. | TI 德州仪器 |   | ||
CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET 1 Features 1• Common Drain Configuration • Low On-Resistance • Small Footprint of 1.35 mm × 1.35 mm • Pb Free and Halogen Free • RoHS Compliant • ESD HBM Protection >2.5 kV 2 Applications • USB Type-C/PD • Battery Management • Battery Protection 3 Description This 20 V, 18.7 mΩ, 1. | TI 德州仪器 | | ||
CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET 1 Features 1• Common Drain Configuration • Low On-Resistance • Small Footprint of 1.35 mm × 1.35 mm • Pb Free and Halogen Free • RoHS Compliant • ESD HBM Protection >2.5 kV 2 Applications • USB Type-C/PD • Battery Management • Battery Protection 3 Description This 20 V, 18.7 mΩ, 1. | TI 德州仪器 | | ||
20 V Dual N-Channel NexFET Power MOSFET 文件：418.64 Kbytes Page：13 Pages | TI 德州仪器 | | ||
20 V Dual N-Channel NexFET Power MOSFET 文件：418.64 Kbytes Page：13 Pages | TI 德州仪器 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
24+ |
NA/ |
2011 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
TI(德州仪器) |
24+ |
PICOSTAR-4 |
88848 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
TI/德州仪器 |
25+ |
4-XFLGA |
65248 |
百分百原装现货 实单必成 |
|||
TI(德州仪器) |
24+/25+ |
10000 |
原装正品现货库存价优 |
||||
TI |
21+ |
PICOSTAR-4 |
21000 |
全新原装公司现货
|
|||
TI |
23+ |
NA |
20000 |
||||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
|||
TI(德州仪器) |
23+ |
PICOSTAR-4 |
13650 |
公司只做原装正品,假一赔十 |
|||
TI |
25+23+ |
PICOSTA |
26752 |
绝对原装正品全新进口深圳现货 |
|||
TI |
22+ |
5000 |
只做原装鄙视假货15118075546 |
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CSD85302LIC规格书下载地址
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DdatasheetPDF页码索引
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