丝印代码：85302；CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET

1 Features 1• Common Drain Configuration • Low On-Resistance • Small Footprint of 1.35 mm × 1.35 mm • Pb Free and Halogen Free • RoHS Compliant • ESD HBM Protection >2.5 kV 2 Applications • USB Type-C/PD • Battery Management • Battery Protection 3 Description This 20 V, 18.7 mΩ, 1.

采用 1.35mm x 1.35mm LGA 封装、具有栅极 ESD 保护的双路共漏极、24mΩ、20V、N 沟道 NexFET™ 功率 MOSFET

这款 20V、18.7mΩ、采用 1.35mm × 1.35mm 接合栅格阵列 (LGA) 封装的双路NexFET功率金属氧化物半导体场效应晶体管 (MOSFET) 设计为在最小外形尺寸中最大限度地降低电阻。该器件的外形尺寸较小并采用共漏极配置，非常适合小型手持设备中 由电池供电的 应用。 • 共漏极配置\n• 低导通电阻\n• 1.35mm × 1.35mm 小外形封装\n• 无铅且无卤素 \n• 符合 RoHS 标准 \n• 人体放电模式 (HBM) 静电放电 (ESD) 保护 > 2.5kV;

20 V Dual N-Channel NexFET Power MOSFET

文件：418.64 Kbytes Page：13 Pages

丝印代码：85302；CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET

1 Features 1• Common Drain Configuration • Low On-Resistance • Small Footprint of 1.35 mm × 1.35 mm • Pb Free and Halogen Free • RoHS Compliant • ESD HBM Protection >2.5 kV 2 Applications • USB Type-C/PD • Battery Management • Battery Protection 3 Description This 20 V, 18.7 mΩ, 1.

丝印代码：85302；CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET

1 Features 1• Common Drain Configuration • Low On-Resistance • Small Footprint of 1.35 mm × 1.35 mm • Pb Free and Halogen Free • RoHS Compliant • ESD HBM Protection >2.5 kV 2 Applications • USB Type-C/PD • Battery Management • Battery Protection 3 Description This 20 V, 18.7 mΩ, 1.

丝印代码：85302；CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET

1 Features 1• Common Drain Configuration • Low On-Resistance • Small Footprint of 1.35 mm × 1.35 mm • Pb Free and Halogen Free • RoHS Compliant • ESD HBM Protection >2.5 kV 2 Applications • USB Type-C/PD • Battery Management • Battery Protection 3 Description This 20 V, 18.7 mΩ, 1.

20 V Dual N-Channel NexFET Power MOSFET

文件：418.64 Kbytes Page：13 Pages