丝印代码：85302；CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET

1 Features 1• Common Drain Configuration • Low On-Resistance • Small Footprint of 1.35 mm × 1.35 mm • Pb Free and Halogen Free • RoHS Compliant • ESD HBM Protection >2.5 kV 2 Applications • USB Type-C/PD • Battery Management • Battery Protection 3 Description This 20 V, 18.7 mΩ, 1.

20 V Dual N-Channel NexFET Power MOSFET

文件：418.64 Kbytes Page：13 Pages

采用 1.35mm x 1.35mm LGA 封装、具有栅极 ESD 保护的双路共漏极、24mΩ、20V、N 沟道 NexFET™ 功率 MOSFET

丝印代码：85302；CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET

1 Features 1• Common Drain Configuration • Low On-Resistance • Small Footprint of 1.35 mm × 1.35 mm • Pb Free and Halogen Free • RoHS Compliant • ESD HBM Protection >2.5 kV 2 Applications • USB Type-C/PD • Battery Management • Battery Protection 3 Description This 20 V, 18.7 mΩ, 1.

丝印代码：85302；CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET

1 Features 1• Common Drain Configuration • Low On-Resistance • Small Footprint of 1.35 mm × 1.35 mm • Pb Free and Halogen Free • RoHS Compliant • ESD HBM Protection >2.5 kV 2 Applications • USB Type-C/PD • Battery Management • Battery Protection 3 Description This 20 V, 18.7 mΩ, 1.

丝印代码：85302；CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET

1 Features 1• Common Drain Configuration • Low On-Resistance • Small Footprint of 1.35 mm × 1.35 mm • Pb Free and Halogen Free • RoHS Compliant • ESD HBM Protection >2.5 kV 2 Applications • USB Type-C/PD • Battery Management • Battery Protection 3 Description This 20 V, 18.7 mΩ, 1.

20 V Dual N-Channel NexFET Power MOSFET

文件：418.64 Kbytes Page：13 Pages