位置：首页 > IC中文资料 > CSD85302L.B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CSD85302L.B | CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET 1 Features 1• Common Drain Configuration • Low On-Resistance • Small Footprint of 1.35 mm × 1.35 mm • Pb Free and Halogen Free • RoHS Compliant • ESD HBM Protection >2.5 kV 2 Applications • USB Type-C/PD • Battery Management • Battery Protection 3 Description This 20 V, 18.7 mΩ, 1. | TI 德州仪器 |   | |
CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET 1 Features 1• Common Drain Configuration • Low On-Resistance • Small Footprint of 1.35 mm × 1.35 mm • Pb Free and Halogen Free • RoHS Compliant • ESD HBM Protection >2.5 kV 2 Applications • USB Type-C/PD • Battery Management • Battery Protection 3 Description This 20 V, 18.7 mΩ, 1. | TI 德州仪器 | | ||
CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET 1 Features 1• Common Drain Configuration • Low On-Resistance • Small Footprint of 1.35 mm × 1.35 mm • Pb Free and Halogen Free • RoHS Compliant • ESD HBM Protection >2.5 kV 2 Applications • USB Type-C/PD • Battery Management • Battery Protection 3 Description This 20 V, 18.7 mΩ, 1. | TI 德州仪器 | | ||
20 V Dual N-Channel NexFET Power MOSFET 文件：418.64 Kbytes Page：13 Pages | TI 德州仪器 | | ||
20 V Dual N-Channel NexFET Power MOSFET 文件：418.64 Kbytes Page：13 Pages | TI 德州仪器 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
TI |
18+19+ |
QFN |
13400 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TI/德州仪器 |
23+ |
4-XFLGA |
3126 |
原装正品代理渠道价格优势 |
|||
TI/德州仪器 |
24+ |
VSON-8 |
9600 |
原装现货,优势供应,支持实单! |
|||
TI/德州仪器 |
23+ |
VSON-8 |
50000 |
全新原装正品现货,支持订货 |
|||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
||||
24+ |
N/A |
51000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
TI(德州仪器) |
2447 |
VSON-8 |
115000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
TI/德州仪器 |
23+ |
VSON-8 |
50000 |
全新原装正品现货,支持订货 |
|||
TI(德州仪器) |
2021+ |
8000 |
原装现货，欢迎询价 |
CSD85302L.B规格书下载地址
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DdatasheetPDF页码索引
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