| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CSD85302L.B | 丝印代码：85302；CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET 1 Features 1• Common Drain Configuration • Low On-Resistance • Small Footprint of 1.35 mm × 1.35 mm • Pb Free and Halogen Free • RoHS Compliant • ESD HBM Protection >2.5 kV 2 Applications • USB Type-C/PD • Battery Management • Battery Protection 3 Description This 20 V, 18.7 mΩ, 1. | TI 德州仪器 |   | |
丝印代码：85302；CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET 1 Features 1• Common Drain Configuration • Low On-Resistance • Small Footprint of 1.35 mm × 1.35 mm • Pb Free and Halogen Free • RoHS Compliant • ESD HBM Protection >2.5 kV 2 Applications • USB Type-C/PD • Battery Management • Battery Protection 3 Description This 20 V, 18.7 mΩ, 1. | TI 德州仪器 | | ||
丝印代码：85302；CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET 1 Features 1• Common Drain Configuration • Low On-Resistance • Small Footprint of 1.35 mm × 1.35 mm • Pb Free and Halogen Free • RoHS Compliant • ESD HBM Protection >2.5 kV 2 Applications • USB Type-C/PD • Battery Management • Battery Protection 3 Description This 20 V, 18.7 mΩ, 1. | TI 德州仪器 | | ||
20 V Dual N-Channel NexFET Power MOSFET 文件：418.64 Kbytes Page：13 Pages | TI 德州仪器 | | ||
20 V Dual N-Channel NexFET Power MOSFET 文件：418.64 Kbytes Page：13 Pages | TI 德州仪器 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE |
1517+ |
TO-220 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CREE |
24+/25+ |
648 |
原装正品现货库存价优 |
||||
CREE |
2517+ |
TO-220 |
8850 |
只做原装正品现货或订货假一赔十! |
|||
CREE(科锐) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
WOLFSPEED |
21+ |
QFN |
100 |
只做原装鄙视假货15118075546 |
|||
CreeInc |
24+ |
TO-220-2 |
1464 |
||||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
|||
CREE |
2025+ |
TO220 |
3625 |
全新原厂原装产品、公司现货销售 |
|||
CREE/科锐 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
CREE |
20+ |
TO220-2 |
10323 |
终端可以免费供样,支持BOM配单! |
CSD85302L.B规格书下载地址
CSD85302L.B参数引脚图相关
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DdatasheetPDF页码索引
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