30 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

Description Cree’s CMPA2735030S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift ve

封装/外壳：32-VFQFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：30W GAN MMIC PA, 50V, 2.7-3.5GHZ RF/IF，射频/中频和 RFID 射频放大器

30 W, 2.7 - 3.5 GHz, 50 V, GaN MMIC Power Amplifier

包装：盒 描述：2.7-3.5GHZ, AMP W/ CMPA2735030S 开发板，套件，编程器 射频评估和开发套件，开发板

30 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

Cree’s CMPA2735030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and hi

30 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

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