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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CMPA2735030D | 30 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and hi | WOLFSPEED |   | |
CMPA2735030D | 30 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier 文件：529.14 Kbytes Page：9 Pages | Cree 科锐 | | |
CMPA2735030D | 30 W, 2.7 - 3.5 GHz, 50 V, GaN MMIC Power Amplifier | MACOM | | |
30 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Description Cree’s CMPA2735030S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift ve | WOLFSPEED | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE |
三年内 |
1983 |
只做原装正品 |
||||
CREE/科锐 |
23+ |
die |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CREE(科锐) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
CREE |
638 |
原装正品 |
|||||
CREE |
15 |
SMD |
6000 |
绝对原装自己现货 |
|||
MAXIM/美信 |
专业军工 |
NA |
1000 |
只做原装正品军工级部分订货 |
|||
QORVO |
24+ |
SMD |
5000 |
QORVO“芯达集团”专营品牌原装正品假一罚十 |
|||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
|||
CREE全系列可接受订货 |
23+ |
CREE全系列可接受订货 |
100 |
原厂授权代理分销现货只做原装正迈科技样品支持现货 |
|||
Cree/Wolfspeed |
22+ |
9000 |
原厂渠道,现货配单 |
CMPA2735030D芯片相关品牌
CMPA2735030D规格书下载地址
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CMPA2735030D数据表相关新闻
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原装现货
2019-9-27
DdatasheetPDF页码索引
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