Cree’s CMPA2735030D is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

GaN has superior properties compared to silicon or gallium arsenide,

including higher breakdown voltage, higher saturated electron drift velocity

and higher thermal conductivity. GaN HEMTs also offer greater power

density and wider bandwidths compared to Si and GaAs transistors. This

MMIC contains a two-stage reactively matched amplifier design approach enabling

very wide bandwidths to be achieved.

Features

• 35 dB Small Signal Gain

• 40 W Typical PSAT

• Operation up to 50 V

• High Breakdown Voltage

• High Temperature Operation

• Size 0.130 x 0.08 x 0.004 inches

Applications

• Civil and Military Pulsed Radar Amplifiers