Description

Cree’s CMPA2735030S is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit

(MMIC). GaN has superior properties compared to silicon or gallium

arsenide, including higher breakdown voltage, higher saturated electron

drift velocity and higher thermal conductivity. GaN HEMTs also offer

greater power density and wider bandwidths compared to Si and GaAs

transistors. This MMIC contains a two-stage reactively matched amplifier

design approach enabling high power and power added efficiency to be

achieved in a 5mm x 5mm, surface mount (QFN package).

Features

• 32 dB Small Signal Gain

• Operation up to 50 V

• High Breakdown Voltage

• High Temperature Operation

• 5 mm x 5 mm Total Product Size

Applications

• Civil and Military Pulsed Radar Amplifiers