400 W, 2.9 - 3.5 GHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

Description Cree’s CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is mat

400 W, 2.9 - 3.5 GHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

The CGHV35400F1 is a gallium-nitride (GaN) fully matched IMFET housed in a thermally enhanced air cavity package. Operating at 50V, the device is capable of 500W of pulsed output power, with 2mS pulse lengths at 20% duty cycle. ·2.9 – 3.5 GHz Operation\n·500 W Typical Output Power\n·11 dB Power Gain\n·70% Typical Drain Efficiency\n·50 Ohm Internally Matched\n·<0.3 dB Pulsed Amplitude Droop;

400 W, 2900 - 3500 MHz, 50-Ohm Input

文件：829.86 Kbytes Page：11 Pages

400 W, 2.9 - 3.5 GHz, GaN HEMT

Description Wolfspeed’s CGHV35400F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency and high gain for the 2.9 - 3.5 GHz S-Band radar band. The device has been developed with long pulse capability to meet the developing trends in ra

400 W, 50 Ω Input/Output Matched, GaN HEMT 2.9 - 3.5 GHz

The CGHV35400F1 is a gallium-nitride (GaN) fully matched IMFET housed in a thermally enhanced air cavity package. Operating at 50V, the device is capable of 500W of pulsed output power, with 2mS pulse lengths at 20% duty cycle. ·2.9 – 3.5 GHz Operation\n·500 W Typical Output Power\n·11 dB Power Gain\n·70% Typical Drain Efficiency\n·50 Ohm Internally Matched\n·<0.3 dB Pulsed Amplitude Droop;

400 W, 2.9 - 3.5 GHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

The CGHV35400F1 is a gallium-nitride (GaN) fully matched IMFET housed in a thermally enhanced air cavity package. Operating at 50V, the device is capable of 500W of pulsed output power, with 2mS pulse lengths at 20% duty cycle. ·2.9 – 3.5 GHz Operation\n·500 W Typical Output Power\n·11 dB Power Gain\n·70% Typical Drain Efficiency\n·50 Ohm Internally Matched\n·<0.3 dB Pulsed Amplitude Droop;

封装/外壳：440226 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：400W 50V GAN HEMT, 2.9-3.5GHZ 分立半导体产品 晶体管 - FET，MOSFET - 射频

400 W, 2900 - 3500 MHz, 50-Ohm Input

文件：829.86 Kbytes Page：11 Pages

400 W, 2900 - 3500 MHz, 50-Ohm Input

文件：829.86 Kbytes Page：11 Pages

包装：散装 描述：TEST FIXTURE FOR CGHV35400F 开发板，套件，编程器 射频评估和开发套件，开发板

UltraCMOS Divide-by-4 Prescaler, 3??3.5 GHz

文件：2.38823 Mbytes Page：13 Pages

UltraCMOS Divide-by-4 Prescaler, 3??3.5 GHz

文件：2.38823 Mbytes Page：13 Pages