Description

Cree’s CGHV35400F is a gallium nitride (GaN) high electron

mobility transistor (HEMT)designed specifically with high

efficiency, high gain and wide bandwidth capabilities, which

makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar

amplifier applications. The transistor is matched to 50-ohms on

the input and 50-ohms on the output. The CGHV35400 is based on

Cree’s high power density 50 V, 0.4 μm GaN on silicon carbide

(SiC) foundry process. The transistor is supplied in a ceramic/

metal flange package, type 440225.

Features

• 2.9 - 3.5 GHz Operation

• 500 W Typical Output Power

• 11 dB Power Gain

• 70 Typical Drain Efficiency

• 50 Ohm Internally Matched

• <0.3 dB Pulsed Amplitude Droop