Description

Wolfspeed’s CGHV35400F1 is a gallium nitride (GaN) high electron mobility

transistor (HEMT) designed specifically with high efficiency and high gain for

the 2.9 - 3.5 GHz S-Band radar band. The device has been developed with long

pulse capability to meet the developing trends in radar architectures. The

transistor is matched to 50-ohms on the input and 50-ohms on the output. The

CGHV35400F1 is based on Wolfspeed’s high power density 50 V, 0.4 µm GaN

on silicon carbide (SiC) manufacturing process. The transistor is supplied in a

ceramic/metal flange package of type 440226.

Features

• 500 W Typical PSAT

• >65 Typical Drain Efficiency

• 13 dB Large Signal Gain

• High Temperature Operation

Note: Features are typical performance across

frequency under 25°C operation. Please reference

performance charts for additional details.

Applications

• Civil and Military Pulsed

Radar Amplifiers