500 W, 2.7 - 3.1 GHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

Description CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 - 3.1 GHz S-Band radar amplifier applications. The transistor is supplied

500 W, 2700 - 3100 MHz, 50-Ohm Input

文件：722.17 Kbytes Page：10 Pages

500W, 2.7 - 3.1 GHz, GaN IMFET

2.7 – 3.1 GHz, 500 W GaN HEMT

Description Wolfspeed’s CGHV31500F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency and high gain for the 2.7 - 3.1 GHz S-Band radar band. The device has been developed with long pulse capability to meet the developing trends in ra

500W, 2.7 - 3.1 GHz, GaN IMFET

500 W, 2700 - 3100 MHz, 50-Ohm Input

文件：722.17 Kbytes Page：10 Pages

500W, 2.7 - 3.1 GHz, GaN IMFET

包装：盒 描述：TEST FIXTURE FOR CGHV31500F 开发板，套件，编程器 射频评估和开发套件，开发板

500 W, 2700 - 3100 MHz, 50-Ohm Input

文件：722.17 Kbytes Page：10 Pages

V3 type microswitches 5A, 10A and 15A

Product ove r v i ew • Rating 5A, 10A and 15A switching S.P.D.T. • Coil spring mechanism • 6.3mm (.250), 4.8mm (.187) quick connect, solder and screw terminals • Button, lever or roller actuators