Description

CGHV31500F is a gallium nitride (GaN) high electron mobility transistor

(HEMT) designed specifically with high efficiency, high gain and wide

bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 -

3.1 GHz S-Band radar amplifier applications. The transistor is supplied

in a ceramic/metal flange package, type 440226.

Features

• 2.7 - 3.1 GHz Operation

• 650 W Typical Output Power

• 12 dB Power Gain

• 65 Typical Drain Efficiency

• 50 Ohm Internally MatcheD

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