型号 功能描述 生产厂家 企业 LOGO 操作
CGH40120P-TB

120 W, RF Power GaN HEMT

文件:1.035359 Mbytes Page:12 Pages

Cree

科锐

120 W, RF Power GaN HEMT

Description Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain an

WOLFSPEED

120 W, RF Power GaN HEMT

Description Wolfspeed’s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high ga

WOLFSPEED

120 W, RF Power GaN HEMT

文件:1.21044 Mbytes Page:13 Pages

Cree

科锐

120 W, RF Power GaN HEMT

文件:1.21044 Mbytes Page:13 Pages

Cree

科锐

120 W, RF Power GaN HEMT

文件:1.21044 Mbytes Page:13 Pages

Cree

科锐

更新时间:2025-12-23 10:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CREE
18+
SMD
85600
保证进口原装可开17%增值税发票
CREE
638
原装正品
24+
N/A
47000
一级代理-主营优势-实惠价格-不悔选择
cree
160
Cree
25+23+
BGA
19489
绝对原装正品全新进口深圳现货
Cornell-Dubilier
2022+
1
全新原装 货期两周
CREE
23+
RFMOSFET
50000
全新原装正品现货,支持订货
Cree
23+
高频管
2660
原厂原装正品
Cree/Wolfspeed
22+
9000
原厂渠道,现货配单
CREE/科锐
23+
MOSFET
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种

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