Description

Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high

electron mobility transistor (HEMT). The CGH40120F, operating

from a 28 volt rail, offers a general purpose, broadband solution

to a variety of RF and microwave applications. GaN HEMTs offer

high efficiency, high gain and wide bandwidth capabilities making

the CGH40120F ideal for linear and compressed amplifier circuits.

The transistor is available in a flange package. Package Types: 440193

PN: CGH40120F

Features

• Up to 2.5 GHz Operation

• 20 dB Small Signal Gain at 1.0 GHz

• 15 dB Small Signal Gain at 2.0 GHz

• 120 W Typical PSAT

• 70 Efficiency at PSAT

• 28 V Operation

Applications

• 2-Way Private Radio

• Broadband Amplifiers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB, Linear amplifiers suitable for OFDM,

W-CDMA, EDGE, CDMA waveforms