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位置：首页 > IC中文资料第1178页 > CED1

CED1价格

参考价格：￥0.0000

型号：CED1KB15RH 品牌：Russell 备注：这里有CED1多少钱，2025年最近7天走势，今日出价，今日竞价，CED1批发/采购报价，CED1行情走势销售排行榜，CED1报价。
型号 功能描述 生产厂家&企业 LOGO 操作
CED1010AL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,63A,RDS(ON)=9.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant RDS(ON)=14mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED1010L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,63A,RDS(ON)=9.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant RDS(ON)=13mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED1012

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CED1012L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CED10P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-100V,-8A,RDS(ON)=350mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CED110P03

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-92A,RDS(ON)=6.0mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.0mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED1185

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 800V,3.4A,RDS(ON)=2.9W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED1188SA

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 800V,6.8A,RDS(ON)=0.72W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED11N65S

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V,8A,RDS(ON)=0.42W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED11P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V,-7A,RDS(ON)=270mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED11P20

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -200V,-10.5A,RDS(ON)=0.36W@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. ComparabletoAEC-Q101.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED1210

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,62A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED1210A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,53A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED12N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,11A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CED12N10

N-Channel 100 V (D-S) MOSFET

FEATURES •DT-TrenchPowerMOSFET •175°CJunctionTemperature •100RgTested APPLICATIONS •PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
CED12N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,11A,RDS(ON)=180mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED12N10L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,11A,RDS(ON)=175mΩ@VGS=10V. RDS(ON)=185mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CED12N10L

N-Channel 100 V (D-S) MOSFET

FEATURES •DT-TrenchPowerMOSFET •175°CJunctionTemperature •100RgTested APPLICATIONS •PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
CED12N10L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,11A,RDS(ON)=175mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=185mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED12P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-100V,-9A,RDS(ON)=315mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CED12P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V,-9A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED12P15

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -150V,-12A,RDS(ON)=0.24W@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED1310S

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,74A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED1310SL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,76A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=11.5mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED13N65S

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V@TJmax,12.3A,RDS(ON)=0.32W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED14G04

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■40V,125A,RDS(ON)=3.8mΩ@VGS=10V. RDS(ON)=6.8mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CED14N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,12A,RDS(ON)=100mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant RDS(ON)=140mW@VGS=6V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED1588S

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 850V@TJmax,11A,RDS(ON)=0.42W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED15N60LN

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V,13.6A,RDS(ON)=0.28W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED15N60SA

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V@TJmax,13.4A,RDS(ON)=0.28W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED1610LA

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,36A,RDS(ON)=16.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=24mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED16N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,13.3A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CED16N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,13.3A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED16N10L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,13.3A,RDS(ON)=115mΩ@VGS=10V. RDS(ON)=125mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CED16N10L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,13.3A,RDS(ON)=115mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. RDS(ON)=125mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED16N10SL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,12A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=165mW@VGS=3V. RDS(ON)=130mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CED1710

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,17A,RDS(ON)=85mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CED1Z

8-/6-/4-Channel DAS with 16-Bit,Bipolar Input,Simultaneous Sampling ADC

GENERALDESCRIPTION TheAD76061/AD7606-6/AD7606-4are16-bit,simultaneoussampling,analog-to-digitaldataacquisitionsystems(DAS)witheight,six,andfourchannels,respectively.Eachpartcontainsanaloginputclampprotection,asecond-orderantialiasingfilter,atrack-and-holdamplifier,

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
CED1Z

8-Channel DAS with 14-Bit, Bipolar Input, Simultaneous Sampling ADC

GENERALDESCRIPTION TheAD76071isa14-bit,simultaneoussampling,analog-to-digitaldataacquisitionsystem(DAS).Thepartcontainsanaloginputclampprotection;asecond-orderantialiasingfilter;atrackand-holdamplifier;a14-bitchargeredistribution,successiveapproximationanalog-to-

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
CED1185

N-Channel Enhancement Mode Field Effect Transistor

文件：651.5 Kbytes Page：4 Pages

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CED12N10

N-Channel MOSFET uses advanced trench technology

文件：1.30558 Mbytes Page：4 Pages

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

DOINGTER
CED12N10_08

N-Channel Enhancement Mode Field Effect Transistor

文件：416.48 Kbytes Page：4 Pages

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CED12P10_08

P-Channel Enhancement Mode Field Effect Transistor

文件：263.94 Kbytes Page：4 Pages

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CED13N07

N-Channel Enhancement Mode Field Effect Transistor

文件：173.2 Kbytes Page：4 Pages

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CED16N10L

N-Channel MOSFET uses advanced trench technology

文件：1.33831 Mbytes Page：5 Pages

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

DOINGTER
CED1A151MCB6358

封装/外壳：径向，Can - SMD 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：ALUMINUM ELECTROLYTIC CAPACITORS 电容器 铝电解电容器

ETC

知名厂家

CED1A221MCB6377

封装/外壳：径向，Can - SMD 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：ALUMINUM ELECTROLYTIC CAPACITORS 电容器 铝电解电容器

ETC

知名厂家

CED1Z

8-Channel DAS with 18-Bit, Bipolar, Simultaneous Sampling ADC

文件：725.06 Kbytes Page：33 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
CED1Z

8-Channel Differential DAS

文件：878.55 Kbytes Page：37 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
CED1Z

8-Channel Differential DAS with 18-Bit

文件：799.95 Kbytes Page：36 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

CED1产品属性

  • 类型

    描述

  • 型号

    CED1

  • 制造商

    Arlington Industries

  • 功能描述

    Decora Insert White Reversable Cable Pass Through Wallplate

  • 制造商

    ARLINGTON INDUSTRIES

  • 功能描述

    CABLE PASS THROUGH WALLPLATE DECORA INSERT WHITE REVERSABLE

CED1供应商更多...

更新时间：2025-5-13 19:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市威雅利发展有限公司
CED1012
CET
07+
SOT-223
6560
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市永贝尔科技有限公司
CED1012
CET
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
深圳市科恒伟业电子有限公司
CED1012
CET/華瑞
21+
SOT-223
9852
只做原装正品现货!或订货假一赔十!
询价
深圳市一线半导体有限公司
CED1057
24+
3
询价
艾睿国际（香港）有限公司
CED12N10
VBsemi(台湾微碧)
2447
TO-251
105000
80个/管一级代理专营品牌!原装正品,优势现货,长期
询价
深圳市创新迹电子有限公司
CED1012
CET
23+
TO-251
7300
专注配单,只做原装进口现货
询价
深圳市宏捷佳电子科技有限公司
CED11P20
CET
25+
TO-251
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
贸泽芯城（深圳）电子科技有限公司
CED1012/CEU1012
CET/華瑞
23+
TO-251 TO-252
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
深圳市华来深电子有限公司
CED1012
CET
23+
SOT-223
8650
受权代理!全新原装现货特价热卖!
询价
深圳市河锋鑫科技有限公司
CED1012
C
TO-251
22+
6000
十年配单,只做原装
询价

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