N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 11A, RDS(ON) = 180mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel 100 V (D-S) MOSFET

FEATURES • DT-TrenchPower MOSFET • 175 °C Junction Temperature • 100 Rg Tested APPLICATIONS • Primary Side Switch

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 11A, RDS(ON) = 180mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

N-Channel MOSFET uses advanced trench technology

文件：1.30558 Mbytes Page：4 Pages

N Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 11A, RDS(ON) = 175mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 185mW @VGS = 5V.

N-Channel 100 V (D-S) MOSFET

FEATURES • DT-TrenchPower MOSFET • 175 °C Junction Temperature • 100 Rg Tested APPLICATIONS • Primary Side Switch

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 11A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

文件：416.48 Kbytes Page：4 Pages

N Channel MOSFET

N-Channel 100 V (D-S) MOSFET

APPLICATIONS • Primary Side Switch

N-Channel 100 V (D-S) MOSFET

文件：443.06 Kbytes Page：5 Pages

N-Channel 100 V (D-S) MOSFET

文件：1.68514 Mbytes Page：7 Pages

12A, 100V N-CHANNEL POWER MOSFET

文件：194.56 Kbytes Page：5 Pages

N-Channel 100 V (D-S) MOSFET

文件：1.00844 Mbytes Page：7 Pages