位置:首页 > IC中文资料第1415页 > CD4023B
CD4023B价格
参考价格:¥0.0000
型号:CD4023BD3 品牌:RCA 备注:这里有CD4023B多少钱,2025年最近7天走势,今日出价,今日竞价,CD4023B批发/采购报价,CD4023B行情走势销售排行榜,CD4023B报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
CD4023B | Buffered Triple 3-Input NAND Gate General Description These triple gates are monolithic complementary MOS(CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
CD4023B | CMOS NAND Gates Description CD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. CD4011BMS - Quad 2 Input CD4012BMS - Dual 4 Input CD4023BMS - Triple 3 I | Intersil | ||
CD4023B | CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | ||
CD4023B | 4 通道、2 输入、3V 至 18V 与非门 | TI 德州仪器 | ||
CD4023B | Buffered Triple 3-Input NAND,NOR Gate 文件:127.67 Kbytes Page:6 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | ||
CD4023B | CMOS NAND GATES 文件:525.82 Kbytes Page:13 Pages | TI 德州仪器 | ||
CD4023B | CMOS NAND GATES 文件:1.18484 Mbytes Page:19 Pages | TI 德州仪器 | ||
CD4023B | CMOS NAND GATES 文件:1.29026 Mbytes Page:20 Pages | TI 德州仪器 | ||
Buffered Triple 3-Input NAND,NOR Gate 文件:127.67 Kbytes Page:6 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | |||
Buffered Triple 3-Input NAND Gate General Description These triple gates are monolithic complementary MOS(CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Buffered Triple 3-Input NAND Gate General Description These triple gates are monolithic complementary MOS(CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Buffered Triple 3-Input NAND Gate General Description These triple gates are monolithic complementary MOS(CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Buffered Triple 3-Input NAND Gate General Description These triple gates are monolithic complementary MOS(CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND Gates Features • High-Voltage Types (20V Rating) • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V • Buffered Inputs and Outputs • Standardized Symmetrical Output Characteristics • Maximum Input Current of 1A at 18V Over Full PackageTemperature Range; 100nA at 18V and +25oC • 100 Te | RENESAS 瑞萨 | |||
CMOS NAND Gates Description CD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. CD4011BMS - Quad 2 Input CD4012BMS - Dual 4 Input CD4023BMS - Triple 3 I | Intersil | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
Buffered Triple 3-Input NAND,NOR Gate 文件:127.67 Kbytes Page:6 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | |||
Buffered Triple 3-Input NAND,NOR Gate 文件:127.67 Kbytes Page:6 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | |||
Buffered Triple 3-Input NAND,NOR Gate 文件:127.67 Kbytes Page:6 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | |||
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件:523.01 Kbytes Page:12 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:525.82 Kbytes Page:13 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.18484 Mbytes Page:19 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.29026 Mbytes Page:20 Pages | TI 德州仪器 | |||
封装/外壳:14-DIP(0.300",7.62mm) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC GATE NAND 3CH 3-INP 14DIP 集成电路(IC) 门和反相器 | TI2 德州仪器 | |||
CMOS NAND GATES 文件:1.29026 Mbytes Page:20 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.18484 Mbytes Page:19 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:525.82 Kbytes Page:13 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:525.82 Kbytes Page:13 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.29026 Mbytes Page:20 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.18484 Mbytes Page:19 Pages | TI 德州仪器 | |||
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件:523.01 Kbytes Page:12 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.18484 Mbytes Page:19 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.29026 Mbytes Page:20 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:525.82 Kbytes Page:13 Pages | TI 德州仪器 | |||
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件:523.01 Kbytes Page:12 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.18484 Mbytes Page:19 Pages | TI 德州仪器 | |||
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件:523.01 Kbytes Page:12 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.29026 Mbytes Page:20 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.18484 Mbytes Page:19 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:525.82 Kbytes Page:13 Pages | TI 德州仪器 | |||
Buffered Triple 3-Input NAND,NOR Gate 文件:127.67 Kbytes Page:6 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | |||
封装/外壳:14-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC GATE NAND 3CH 3-INP 14SOIC 集成电路(IC) 门和反相器 | TI2 德州仪器 | |||
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件:523.01 Kbytes Page:12 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:525.82 Kbytes Page:13 Pages | TI 德州仪器 |
替换型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
Buffered Triple 3-Input NAND,NOR Gate | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
CMOS NAND Gates | Intersil | Intersil | ||
Buffered Triple 3-Input NAND Gate | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Triple 3-Input NAND(NOR) Gate | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
Triple 3-input NAND Gate | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
Triple 3-input NAND gate | Philips 飞利浦 | Philips | ||
Triple 3-input NAND gate | Philips 飞利浦 | Philips | ||
B-Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | ||
B-Suffix Series CMOS Gates | Motorola 摩托罗拉 | Motorola | ||
B-SUFFIX SERIES CMOS GATES | ONSEMI 安森美半导体 | ONSEMI | ||
B−Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | ||
B-Suffix Series CMOS Gates | Motorola 摩托罗拉 | Motorola | ||
B-SUFFIX SERIES CMOS GATES | ONSEMI 安森美半导体 | ONSEMI | ||
B-Suffix Series CMOS Gates | Motorola 摩托罗拉 | Motorola | ||
COMPLEMENTARY METAL OXIDE SILICON | NTE | NTE | ||
INPUT NAND GATE | RANDE | RANDE |
CD4023B产品属性
- 类型
描述
- 型号
CD4023B
- 制造商
Fairchild Semiconductor Corporation
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FSC |
24+ |
SOP |
6430 |
原装现货/欢迎来电咨询 |
|||
FSC |
24+ |
DIP14 |
5650 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
Fairchild/ON |
23+ |
14DIP |
9000 |
原装正品,支持实单 |
|||
TI |
24+ |
DIP |
15800 |
绝对原装现货,价格低,欢迎询购! |
|||
FAIRCILD |
22+ |
SOP |
8000 |
原装正品支持实单 |
|||
NSC |
21+ |
DIP-14 |
1638 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
NS/国半 |
24+ |
DIP-14 |
37935 |
郑重承诺只做原装进口现货 |
|||
TI(德州仪器) |
24+ |
TSSOP14 |
2317 |
只做原装,提供一站式配单服务,代工代料。BOM配单 |
|||
ROHM/罗姆 |
24+ |
SOT23-5 |
6000 |
公司现货库存,支持实单 |
|||
TI(德州仪器) |
24+ |
标准封装 |
7398 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
CD4023B规格书下载地址
CD4023B参数引脚图相关
- d2002
- d126
- d1004
- d1002
- c波段
- cw7805
- cs5532
- cs1
- cpld
- cp10
- connector
- cob
- cmos传感器
- cmos
- cm2006
- cicret
- cd4543
- cd4066
- cd4051
- cd4046
- CD4030M
- CD4030C
- CD4030B
- CD4030A
- CD4030
- CD4029B
- CD4029
- CD4028B
- CD4028
- CD4027B
- CD4027
- CD4026B
- CD4025M
- CD4025C
- CD4025B
- CD4025
- CD4024BCJ
- CD4024B
- CD4024AF
- CD4024AE
- CD4024AD
- CD4024
- CD4023UBF
- CD4023UBE
- CD4023UBD
- CD4023MW
- CD4023MJ
- CD4023M
- CD4023CN
- CD4023CJ
- CD4023C
- CD4023BMW
- CD4023BMJ
- CD4023BF
- CD4023BE
- CD4023BD
- CD4023BCN
- CD4023BCJ
- CD4023AF
- CD4023AE
- CD4023AD
- CD4023A
- CD4023
- CD4022BMW
- CD4022BMJ
- CD4022BF
- CD4022BE
- CD4022BD
- CD4022BCN
- CD4022BCJ
- CD4022B
- CD4022AF
- CD4022AE
- CD4022AD
- CD4022
- CD4021BF
- CD4021BE
- CD4021BD
- CD4021B
- CD4021AF
- CD4021AE
- CD4021
- CD4020B
- CD4020
- CD4019B
- CD40193
- CD40192
- CD4018B
- CD40182
- CD40181
- CD4018
- CD4017B
- CD4017A
- CD40174
- CD4017
- CD4016B
- CD40163
CD4023B数据表相关新闻
CD4017BM96
CD4017BM96
2024-5-6CD4024BM96
CD4024BM96
2022-11-22CD4024BM96
CD4024BM96 ,当天发货0755-82732291全新原装现货或门市自取.
2020-11-9CD4023BE原厂原装正品现货
焕盛达竭诚为您提供一站式配套服务。当天下单,当天发货;
2020-10-2CD4021BE 原装正品 假一赔十
原厂很远 现货很近 坚持每一片芯片都来自原厂及授权渠道
2020-5-8CD4019BCM,CD4019BCMX,CD4019BCN,CD4020BCN,CD40175BCN,CD40182BCN,CD40174BCN,CD40158CN,CD4044BCMX,CD4049UBCN,CD4051BCMTCX,CD4051BCMX,CD4051BCSJX,CD4052BCMX,CD4052BCSJ,
CD4019BCM,CD4019BCMX,CD4019BCN,CD4020BCN,CD40175BCN,CD40182BCN,CD40174BCN,CD40158CN,CD4044BCMX,CD4049UBCN,CD4051BCMTCX,CD4051BCMX,CD4051BCSJX,CD4052BCMX,CD4052BCSJ,
2019-12-18
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105