CD4023BM价格
参考价格：￥0.8528
型号：CD4023BM 品牌：TI 备注：这里有CD4023BM多少钱，2026年最近7天走势，今日出价，今日竞价，CD4023BM批发/采购报价，CD4023BM行情走势销售排行榜，CD4023BM报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CD4023BM | 丝印代码：CD4023BM；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 |   | |
丝印代码：CD4023BM；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | | ||
丝印代码：CD4023BM；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | | ||
丝印代码：CD4023BM；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | | ||
CD4023BM | Buffered Triple 3-Input NAND,NOR Gate 文件：127.67 Kbytes Page：6 Pages | NSC 国半 | | |
CD4023BM | 封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE NAND 3CH 3-INP 14SOIC 集成电路（IC） 门和反相器 | TI 德州仪器 | | |
CD4023BM | CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages | TI 德州仪器 | | |
CD4023BM | The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages | TI 德州仪器 | | |
CD4023BM | CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages | TI 德州仪器 | | |
CD4023BM | CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages | TI 德州仪器 | | |
CMOS NAND Gates Description CD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. CD4011BMS - Quad 2 Input CD4012BMS - Dual 4 Input CD4023BMS - Triple 3 I | INTERSIL | | ||
CMOS NAND Gate CD4011BMS - Quad 2 Input CD4012BMS - Dual 4 Input CD4023BMS - Triple 3 Input\nCD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered.\nThe CD4011B • High-Voltage Types (20V Rating) \n• Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V \n• Buffered Inputs and Outputs \n• Standardized Symmetrical Output Characteristics \n• Maximum Input Current of 1µA at 18V Over Full Package- Temperature Range; 100nA at 18V and +25oC \n• 100% Tes; | RENESAS 瑞萨 | | ||
CMOS NAND Gates Features • High-Voltage Types (20V Rating) • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V • Buffered Inputs and Outputs • Standardized Symmetrical Output Characteristics • Maximum Input Current of 1A at 18V Over Full PackageTemperature Range; 100nA at 18V and +25oC • 100 Te | RENESAS 瑞萨 | | ||
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages | TI 德州仪器 | | ||
CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages | TI 德州仪器 | | ||
CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages | TI 德州仪器 | | ||
CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages | TI 德州仪器 | | ||
CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages | TI 德州仪器 | | ||
CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages | TI 德州仪器 | | ||
CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages | TI 德州仪器 | | ||
CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages | TI 德州仪器 | | ||
CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages | TI 德州仪器 | | ||
CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages | TI 德州仪器 | | ||
Buffered Triple 3-Input NAND,NOR Gate 文件：127.67 Kbytes Page：6 Pages | NSC 国半 | | ||
Buffered Triple 3-Input NAND,NOR Gate 文件：127.67 Kbytes Page：6 Pages | NSC 国半 | | ||
CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages | TI 德州仪器 | | ||
封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE NAND 3CH 3-INP 14SOIC 集成电路（IC） 门和反相器 | TI 德州仪器 | | ||
CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages | TI 德州仪器 | | ||
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages | TI 德州仪器 | | ||
CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages | TI 德州仪器 | | ||
CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages | TI 德州仪器 | | ||
CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages | TI 德州仪器 | | ||
CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages | TI 德州仪器 | | ||
Buffered Triple 3-Input NAND,NOR Gate 文件：127.67 Kbytes Page：6 Pages | NSC 国半 | | ||
Buffered Triple 3-Input NAND,NOR Gate 文件：127.67 Kbytes Page：6 Pages | NSC 国半 | | ||
Buffered Triple 3-Input NAND,NOR Gate 文件：127.67 Kbytes Page：6 Pages | NSC 国半 | |
| 替换型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Buffered Triple 3-Input NAND,NOR Gate | NSC 国半 | NSC | | |
Buffered Triple 3-Input NAND Gate | FAIRCHILD 仙童半导体 | FAIRCHILD | | |
CMOS NAND Gates | INTERSIL | INTERSIL | | |
Buffered Triple 3-Input NAND,NOR Gate | NSC 国半 | NSC | | |
Buffered Triple 3-Input NAND Gate | FAIRCHILD 仙童半导体 | FAIRCHILD | | |
Buffered Triple 3-Input NAND,NOR Gate | NSC 国半 | NSC | | |
CMOS NAND GATES | TI 德州仪器 | TI | | |
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages | TI 德州仪器 | TI | | |
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages | TI 德州仪器 | TI | | |
CMOS NAND GATES | TI 德州仪器 | TI | | |
Triple 3-Input NAND(NOR) Gate | NSC 国半 | NSC | | |
Triple 3-input NAND Gate | HITACHIHitachi Semiconductor 日立日立公司 | HITACHI | | |
Triple 3-input NAND gate | PHILIPS 飞利浦 | PHILIPS | | |
Triple 3-input NAND gate | PHILIPS 飞利浦 | PHILIPS | | |
B-Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | | |
B-Suffix Series CMOS Gates | MOTOROLA 摩托罗拉 | MOTOROLA | | |
B-SUFFIX SERIES CMOS GATES | ONSEMI 安森美半导体 | ONSEMI | | |
B−Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | | |
B-Suffix Series CMOS Gates | MOTOROLA 摩托罗拉 | MOTOROLA | | |
B-SUFFIX SERIES CMOS GATES | ONSEMI 安森美半导体 | ONSEMI | | |
B-Suffix Series CMOS Gates | MOTOROLA 摩托罗拉 | MOTOROLA | | |
COMPLEMENTARY METAL OXIDE SILICON | NTE | NTE | | |
INPUT NAND GATE | RANDE | RANDE | |
CD4023BM产品属性
- 类型
描述
- Low Dose Rate (LDR) (krad (Si))：
ELDRS free
- DLA SMD：
5962R9662103V9A
- Qualification Level：
QML Class V (space)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
25+ |
SOP |
32000 |
TI/德州仪器全新特价CD4023BM96即刻询购立享优惠#长期有货 |
|||
TI/德州仪器 |
24+ |
SOP |
2500 |
只做原装真实库存13714450367 |
|||
TI |
26+ |
DIP/SMD |
6980 |
原装现货,可开13%税票 |
|||
TI |
20+ |
N/A |
3600 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
TI |
23+ |
NA |
20000 |
||||
陶瓷 |
25+ |
CDIP-14 |
880000 |
明嘉莱只做原装正品现货 |
|||
TI |
22+ |
5000 |
只做原装鄙视假货15118075546 |
||||
TI |
25+ |
SOP |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
TI(德州仪器) |
26+ |
CDIP-14 |
3600 |
十二年VIP会员,诚信经营,原装库存·可零售! |
|||
陶瓷 |
24+ |
CDIP-14 |
52446 |
只做原装进口现货 |
CD4023BM规格书下载地址
CD4023BM参数引脚图相关
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CD4023BM数据表相关新闻
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原厂很远 现货很近 坚持每一片芯片都来自原厂及授权渠道
2020-5-8CD4019BCM，CD4019BCMX，CD4019BCN，CD4020BCN，CD40175BCN，CD40182BCN，CD40174BCN，CD40158CN，CD4044BCMX，CD4049UBCN，CD4051BCMTCX，CD4051BCMX，CD4051BCSJX，CD4052BCMX，CD4052BCSJ，
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2019-12-18
DdatasheetPDF页码索引
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