MC14023B价格

参考价格:¥0.6313

型号:MC14023BDG 品牌:ON 备注:这里有MC14023B多少钱,2025年最近7天走势,今日出价,今日竞价,MC14023B批发/采购报价,MC14023B行情走势销售排行榜,MC14023B报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MC14023B

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

MC14023B

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

Motorola

摩托罗拉

MC14023B

三路 3 输入 NAND 门极

ONSEMI

安森美半导体

MC14023B

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半导体

MC14023B

B?뭆uffix Series CMOS Gates

文件:195.05 Kbytes Page:14 Pages

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

Motorola

摩托罗拉

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

Motorola

摩托罗拉

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

Motorola

摩托罗拉

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半导体

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半导体

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半导体

封装/外壳:14-SOIC(0.154",3.90mm 宽) 包装:管件 描述:IC GATE NAND 3CH 3-INP 14SOIC 集成电路(IC) 门和反相器

ONSEMI

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封装/外壳:14-SOIC(0.154",3.90mm 宽) 包装:管件 描述:IC GATE NAND 3CH 3-INP 14SOIC 集成电路(IC) 门和反相器

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

文件:135.47 Kbytes Page:11 Pages

ONSEMI

安森美半导体

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半导体

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

文件:135.47 Kbytes Page:11 Pages

ONSEMI

安森美半导体

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

文件:135.47 Kbytes Page:11 Pages

ONSEMI

安森美半导体

Triple 3-input NAND Gate

Triple 3-input NAND Gate

HitachiHitachi Semiconductor

日立日立公司

SAW Filter Electrical Characteristic

文件:44.59 Kbytes Page:1 Pages

SIPAT

胜普电子

SAW Filter Electrical Characteristic

文件:65.88 Kbytes Page:1 Pages

SIPAT

胜普电子

替换型号 功能描述 生产厂家 企业 LOGO 操作

Buffered Triple 3-Input NAND,NOR Gate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

Buffered Triple 3-Input NAND Gate

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

CMOS NAND Gates

Intersil

Buffered Triple 3-Input NAND,NOR Gate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

Buffered Triple 3-Input NAND Gate

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Buffered Triple 3-Input NAND,NOR Gate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

CMOS NAND GATES

TI

德州仪器

The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages

TI

德州仪器

The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages

TI

德州仪器

CMOS NAND GATES

TI

德州仪器

Buffered Triple 3-Input NAND,NOR Gate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

Triple 3-Input NAND(NOR) Gate

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

Triple 3-input NAND Gate

HitachiHitachi Semiconductor

日立日立公司

Triple 3-input NAND gate

Philips

飞利浦

Triple 3-input NAND gate

Philips

飞利浦

COMPLEMENTARY METAL OXIDE SILICON

NTE

INPUT NAND GATE

RANDE

MC14023B产品属性

  • 类型

    描述

  • 型号

    MC14023B

  • 制造商

    Motorola Inc

更新时间:2025-9-27 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
SOP14
945
只做原装,提供一站式配单服务,代工代料。BOM配单
ON(安森美)
24+
NA/
8735
原厂直销,现货供应,账期支持!
ON
2016+
SOP-14
3900
只做原装,假一罚十,公司可开17%增值税发票!
MOT
23+
NA
6500
全新原装假一赔十
ON/安森美
24+
SOIC-14
30000
原装正品公司现货,假一赔十!
三年内
1983
只做原装正品
ON/安森美
22+
SOP16
100000
代理渠道/只做原装/可含税
ON/安森美
25+
SOP16
54658
百分百原装现货 实单必成
onsemi
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
ON/安森美
25+
SOP14
880000
明嘉莱只做原装正品现货

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