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CD4023价格
参考价格:¥33.3014
型号:CD4023AE 品牌:Semiconductors 备注:这里有CD4023多少钱,2025年最近7天走势,今日出价,今日竞价,CD4023批发/采购报价,CD4023行情走势销售排行榜,CD4023报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
CD4023 | Buffered Triple 3-Input NAND Gate General Description These triple gates are monolithic complementary MOS(CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
CD4023 | CMOS NAND Gates Description CD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. CD4011BMS - Quad 2 Input CD4012BMS - Dual 4 Input CD4023BMS - Triple 3 I | Intersil | ||
CD4023 | Buffered Triple 3-Input NAND,NOR Gate 文件:127.67 Kbytes Page:6 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | ||
CD4023 | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | ||
CD4023 | 3路3输入与非门 | i-coreWUXI i-CORE Electronics Co., Ltd 中微爱芯无锡中微爱芯电子有限公司 | ||
CD4023 | Buffered Triple 3-Input NAND,NOR Gate | TI 德州仪器 | ||
CD4023 | Buffered Triple 3-Input NAND Gate | ONSEMI 安森美半导体 | ||
CMOS NAND Gates Features: Quiescent current specified to 15 V Maximum input leakage of 1 uA at 15 V (full package-temperature range) 1-V noise margin (full package-temperature range) | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND Gates Description CD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. CD4011BMS - Quad 2 Input CD4012BMS - Dual 4 Input CD4023BMS - Triple 3 I | Intersil | |||
Buffered Triple 3-Input NAND Gate General Description These triple gates are monolithic complementary MOS(CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Buffered Triple 3-Input NAND Gate General Description These triple gates are monolithic complementary MOS(CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Buffered Triple 3-Input NAND Gate General Description These triple gates are monolithic complementary MOS(CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Buffered Triple 3-Input NAND Gate General Description These triple gates are monolithic complementary MOS(CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Buffered Triple 3-Input NAND Gate General Description These triple gates are monolithic complementary MOS(CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND Gates Features • High-Voltage Types (20V Rating) • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V • Buffered Inputs and Outputs • Standardized Symmetrical Output Characteristics • Maximum Input Current of 1A at 18V Over Full PackageTemperature Range; 100nA at 18V and +25oC • 100 Te | RENESAS 瑞萨 | |||
CMOS NAND Gates Description CD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. CD4011BMS - Quad 2 Input CD4012BMS - Dual 4 Input CD4023BMS - Triple 3 I | Intersil | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre | TI 德州仪器 | |||
CMOS NAND GATES 文件:371.28 Kbytes Page:7 Pages | TI 德州仪器 | |||
CMOS NAND Gates 文件:200.37 Kbytes Page:4 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:371.28 Kbytes Page:7 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.18484 Mbytes Page:19 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.29026 Mbytes Page:20 Pages | TI 德州仪器 | |||
Buffered Triple 3-Input NAND,NOR Gate 文件:127.67 Kbytes Page:6 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | |||
CMOS NAND GATES 文件:525.82 Kbytes Page:13 Pages | TI 德州仪器 | |||
Buffered Triple 3-Input NAND,NOR Gate 文件:127.67 Kbytes Page:6 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | |||
Buffered Triple 3-Input NAND,NOR Gate 文件:127.67 Kbytes Page:6 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | |||
Buffered Triple 3-Input NAND,NOR Gate 文件:127.67 Kbytes Page:6 Pages | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | |||
CMOS NAND GATES 文件:525.82 Kbytes Page:13 Pages | TI 德州仪器 | |||
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件:523.01 Kbytes Page:12 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.18484 Mbytes Page:19 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.29026 Mbytes Page:20 Pages | TI 德州仪器 | |||
封装/外壳:14-DIP(0.300",7.62mm) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC GATE NAND 3CH 3-INP 14DIP 集成电路(IC) 门和反相器 | TI2 德州仪器 | |||
CMOS NAND GATES 文件:1.29026 Mbytes Page:20 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.18484 Mbytes Page:19 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:525.82 Kbytes Page:13 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:525.82 Kbytes Page:13 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.29026 Mbytes Page:20 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.18484 Mbytes Page:19 Pages | TI 德州仪器 | |||
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件:523.01 Kbytes Page:12 Pages | TI 德州仪器 | |||
The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件:523.01 Kbytes Page:12 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.18484 Mbytes Page:19 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:1.29026 Mbytes Page:20 Pages | TI 德州仪器 | |||
CMOS NAND GATES 文件:525.82 Kbytes Page:13 Pages | TI 德州仪器 |
替换型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
Triple 3-input NAND Gate | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
Triple 3-input NAND gate | Philips 飞利浦 | Philips | ||
Triple 3-input NAND gate | Philips 飞利浦 | Philips | ||
B-Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | ||
B−Suffix Series CMOS Gates | ONSEMI 安森美半导体 | ONSEMI | ||
B-Suffix Series CMOS Gates | Motorola 摩托罗拉 | Motorola | ||
B-SUFFIX SERIES CMOS GATES | ONSEMI 安森美半导体 | ONSEMI | ||
B-Suffix Series CMOS Gates | Motorola 摩托罗拉 | Motorola | ||
B-SUFFIX SERIES CMOS GATES | ONSEMI 安森美半导体 | ONSEMI | ||
B-Suffix Series CMOS Gates | Motorola 摩托罗拉 | Motorola | ||
COMPLEMENTARY METAL OXIDE SILICON | NTE | NTE | ||
INPUT NAND GATE | RANDE | RANDE |
CD4023产品属性
- 类型
描述
- 型号
CD4023
- 制造商
Harris Corporation
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ROHM/罗姆 |
24+ |
SOT23-5 |
6000 |
公司现货库存,支持实单 |
|||
TI(德州仪器) |
24+ |
标准封装 |
7398 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
|||
TI(德州仪器) |
24+ |
TSSOP14 |
2317 |
只做原装,提供一站式配单服务,代工代料。BOM配单 |
|||
NS |
25+ |
SOP14 |
35 |
原装正品,假一罚十! |
|||
NS |
24+ |
DIP14 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
127 |
DIPTRONICS/台湾圜达 |
450 |
92 |
||||
TI/德州仪器 |
22+ |
SOIC-14 |
500000 |
原装现货支持实单价优/含税 |
|||
TI |
24+ |
PDIP|14 |
798400 |
免费送样原盒原包现货一手渠道联系 |
|||
FSC/ON |
23+ |
原包装原封□□ |
4240 |
原装进口特价供应特价,原装元器件供应,支持开发样品更多详细咨询库存 |
|||
FSC |
25+23+ |
SMD |
30464 |
绝对原装正品全新进口深圳现货 |
CD4023规格书下载地址
CD4023参数引脚图相关
- d2002
- d126
- d1004
- d1002
- c波段
- cw7805
- cs5532
- cs1
- cpld
- cp10
- connector
- cob
- cmos传感器
- cmos
- cm2006
- cicret
- cd4543
- cd4066
- cd4051
- cd4046
- CD4030B
- CD4030A
- CD4030
- CD4029B
- CD4029
- CD4028B
- CD4028
- CD4027B
- CD4027
- CD4026B
- CD4025M
- CD4025C
- CD4025B
- CD4025
- CD4024B
- CD4024AD
- CD4024
- CD4023UBF
- CD4023UBE
- CD4023UBD
- CD4023MW
- CD4023MJ
- CD4023M
- CD4023CN
- CD4023CJ
- CD4023C
- CD4023BMW
- CD4023BMJ
- CD4023BF
- CD4023BE
- CD4023BD
- CD4023BCN
- CD4023BCJ
- CD4023B
- CD4023AF
- CD4023AE
- CD4023AD
- CD4023A
- CD4022BMW
- CD4022BMJ
- CD4022BF
- CD4022BE
- CD4022BD
- CD4022BCN
- CD4022BCJ
- CD4022B
- CD4022AF
- CD4022AE
- CD4022AD
- CD4022
- CD4021BF
- CD4021BE
- CD4021BD
- CD4021B
- CD4021AF
- CD4021AE
- CD4021AD
- CD4021
- CD4020BMW
- CD4020BMJ
- CD4020B
- CD4020
- CD4019B
- CD40193
- CD40192
- CD4018B
- CD40182
- CD40181
- CD4018
- CD4017B
- CD4017A
- CD40174
- CD4017
- CD4016B
- CD40163
- CD40162
- CD40161
CD4023数据表相关新闻
CD4017BM96
CD4017BM96
2024-5-6CD4024BM96
CD4024BM96
2022-11-22CD4024BM96
CD4024BM96 ,当天发货0755-82732291全新原装现货或门市自取.
2020-11-9CD4023BE原厂原装正品现货
焕盛达竭诚为您提供一站式配套服务。当天下单,当天发货;
2020-10-2CD4021BE 原装正品 假一赔十
原厂很远 现货很近 坚持每一片芯片都来自原厂及授权渠道
2020-5-8CD4019BCM,CD4019BCMX,CD4019BCN,CD4020BCN,CD40175BCN,CD40182BCN,CD40174BCN,CD40158CN,CD4044BCMX,CD4049UBCN,CD4051BCMTCX,CD4051BCMX,CD4051BCSJX,CD4052BCMX,CD4052BCSJ,
CD4019BCM,CD4019BCMX,CD4019BCN,CD4020BCN,CD40175BCN,CD40182BCN,CD40174BCN,CD40158CN,CD4044BCMX,CD4049UBCN,CD4051BCMTCX,CD4051BCMX,CD4051BCSJX,CD4052BCMX,CD4052BCSJ,
2019-12-18
DdatasheetPDF页码索引
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