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CD4023价格

参考价格：￥33.3014

型号：CD4023AE 品牌：Semiconductors 备注：这里有CD4023多少钱，2026年最近7天走势，今日出价，今日竞价，CD4023批发/采购报价，CD4023行情走势销售排行榜，CD4023报价。

型号	功能描述	生产厂家企业	LOGO
CD4023	Buffered Triple 3-Input NAND Gate General Description These triple gates are monolithic complementary MOS(CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outp	FAIRCHILD 仙童半导体	FAIRCHILD
CD4023	CMOS NAND Gates Description CD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. CD4011BMS - Quad 2 Input CD4012BMS - Dual 4 Input CD4023BMS - Triple 3 I	INTERSIL	INTERSIL
CD4023	3路3输入与非门 The CD4023 provides the positive triple 3-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance.It operates over a recommended VDD power supply range of 3V to 15V referenced to GND (usually ground). Unused inputs must be connecte • Wide supply voltage range from 3V to 15V\n• Fully static operation\n• 5V, 10V, and 15V parametric ratings\n• Standardized symmetrical output characteristics\n• Inputs and outputs are protected against electrostatic effects\n• Specified from -40℃ to +125℃\n• Packaging information: DIP14/SOP14/TSSOP;	I-COREWUXI i-CORE Electronics Co., Ltd 中微爱芯无锡中微爱芯电子有限公司	I-CORE
CD4023	Buffered Triple 3-Input NAND,NOR Gate	TI 德州仪器	TI
CD4023	Buffered Triple 3-Input NAND Gate	ONSEMI 安森美半导体	ONSEMI
CD4023	SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
CD4023	Buffered Triple 3-Input NAND,NOR Gate 文件：127.67 Kbytes Page：6 Pages	NSC 国半	NSC
CD4023BE	丝印代码：CD4023BE；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4023BE.A	丝印代码：CD4023BE；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4023BEE4	丝印代码：CD4023BE；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4023BF	丝印代码：CD4023BF；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4023BF.A	丝印代码：CD4023BF；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4023BF3A	丝印代码：CD4023BF3A；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4023BF3A.A	丝印代码：CD4023BF3A；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4023BM	丝印代码：CD4023BM；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4023BM96	丝印代码：CD4023BM；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4023BM96.A	丝印代码：CD4023BM；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4023BMT	丝印代码：CD4023BM；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4023BNSR	丝印代码：CD4023B；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4023BNSR.A	丝印代码：CD4023B；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4023A	CMOS NAND Gates Features: Quiescent current specified to 15 V Maximum input leakage of 1 uA at 15 V (full package-temperature range) 1-V noise margin (full package-temperature range)	TI 德州仪器	TI
CD4023B	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4023B	CMOS NAND Gates Description CD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. CD4011BMS - Quad 2 Input CD4012BMS - Dual 4 Input CD4023BMS - Triple 3 I	INTERSIL	INTERSIL
CD4023B	Buffered Triple 3-Input NAND Gate General Description These triple gates are monolithic complementary MOS(CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outp	FAIRCHILD 仙童半导体	FAIRCHILD
CD4023BC	Buffered Triple 3-Input NAND Gate General Description These triple gates are monolithic complementary MOS(CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outp	FAIRCHILD 仙童半导体	FAIRCHILD
CD4023BCM	Buffered Triple 3-Input NAND Gate General Description These triple gates are monolithic complementary MOS(CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outp	FAIRCHILD 仙童半导体	FAIRCHILD
CD4023BCN	Buffered Triple 3-Input NAND Gate General Description These triple gates are monolithic complementary MOS(CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outp	FAIRCHILD 仙童半导体	FAIRCHILD
CD4023BCS	Buffered Triple 3-Input NAND Gate General Description These triple gates are monolithic complementary MOS(CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B series output drive. The devices also have buffered outp	FAIRCHILD 仙童半导体	FAIRCHILD
CD4023B-MIL	CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4023BMS	CMOS NAND Gates Features • High-Voltage Types (20V Rating) • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V • Buffered Inputs and Outputs • Standardized Symmetrical Output Characteristics • Maximum Input Current of 1A at 18V Over Full PackageTemperature Range; 100nA at 18V and +25oC • 100 Te	RENESAS 瑞萨	RENESAS
CD4023BMS	CMOS NAND Gates Description CD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered. CD4011BMS - Quad 2 Input CD4012BMS - Dual 4 Input CD4023BMS - Triple 3 I	INTERSIL	INTERSIL
CD4023BPW	丝印代码：CM023B；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4023BPWR	丝印代码：CM023B；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4023BPWR.A	丝印代码：CM023B；CMOS NAND GATES Features: Propagation delay time = 60 ns (typ.) at CL =50 pF, Vpp = 10V = Buffered inputs and outputs = Standardized symmetrical output characteristics Maximum input current of 1 uA at 18 V over full package temperature range; 100 nA at 18 V and 25°C = 100% tested for quiescent curre	TI 德州仪器	TI
CD4023A	CMOS NAND GATES 文件：371.28 Kbytes Page：7 Pages	TI 德州仪器	TI
CD4023A	CMOS NAND Gates 文件：200.37 Kbytes Page：4 Pages	TI 德州仪器	TI
CD4023AFB	CMOS NAND GATES 文件：371.28 Kbytes Page：7 Pages	TI 德州仪器	TI
CD4023B	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4023B	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4023B	Buffered Triple 3-Input NAND,NOR Gate 文件：127.67 Kbytes Page：6 Pages	NSC 国半	NSC
CD4023B	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4023BC	Buffered Triple 3-Input NAND,NOR Gate 文件：127.67 Kbytes Page：6 Pages	NSC 国半	NSC
CD4023BCJ	Buffered Triple 3-Input NAND,NOR Gate 文件：127.67 Kbytes Page：6 Pages	NSC 国半	NSC
CD4023BCN	Buffered Triple 3-Input NAND,NOR Gate 文件：127.67 Kbytes Page：6 Pages	NSC 国半	NSC
CD4023BE	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4023BE	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI
CD4023BE	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4023BE	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4023BE	封装/外壳：14-DIP（0.300"，7.62mm）包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：IC GATE NAND 3CH 3-INP 14DIP 集成电路（IC）门和反相器	TI 德州仪器	TI
CD4023BEE4	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4023BEE4	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4023BEE4	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4023BF	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI
CD4023BF	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI
CD4023BF	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4023BF	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4023BF3A	The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages 文件：523.01 Kbytes Page：12 Pages	TI 德州仪器	TI
CD4023BF3A	CMOS NAND GATES 文件：1.18484 Mbytes Page：19 Pages	TI 德州仪器	TI
CD4023BF3A	CMOS NAND GATES 文件：1.29026 Mbytes Page：20 Pages	TI 德州仪器	TI
CD4023BF3A	CMOS NAND GATES 文件：525.82 Kbytes Page：13 Pages	TI 德州仪器	TI

替换型号	功能描述	生产厂家企业	LOGO
HD14023B	Triple 3-input NAND Gate	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HEF4023BD	Triple 3-input NAND gate	PHILIPS 飞利浦	PHILIPS
HEF4023BP	Triple 3-input NAND gate	PHILIPS 飞利浦	PHILIPS
MC14023B	B-Suffix Series CMOS Gates	ONSEMI 安森美半导体	ONSEMI
MC14023B	B−Suffix Series CMOS Gates	ONSEMI 安森美半导体	ONSEMI
MC14023B	B-Suffix Series CMOS Gates	MOTOROLA 摩托罗拉	MOTOROLA
MC14023B	B-SUFFIX SERIES CMOS GATES	ONSEMI 安森美半导体	ONSEMI
MC14023BCL	B-Suffix Series CMOS Gates	MOTOROLA 摩托罗拉	MOTOROLA
MC14023BCP	B-SUFFIX SERIES CMOS GATES	ONSEMI 安森美半导体	ONSEMI
MC14023BCP	B-Suffix Series CMOS Gates	MOTOROLA 摩托罗拉	MOTOROLA
NTE4023B	COMPLEMENTARY METAL OXIDE SILICON	NTE	NTE
SCL4023B	INPUT NAND GATE	RANDE	RANDE

CD4023产品属性

类型
描述
Function：
NAND gates
Description：
Triple 3-input NAND gate
VCC (V)：
3.0 - 15.0
Logic switching levels：
CMOS
Tamb (°C)：
-40~125
Nr of pins：
14
Package：
DIP14/SOP14/TSSOP14

CD4023供应商更多...

更新时间：2026-5-15 14:15:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	CD4023BM96	TI	25+	N/A	7786	原装正品现货,原厂订货,可支持含税原型号开票。	询价
中天科工半导体（深圳）有限公司	CD4023BM96	TI/德州仪器	25+	SOP	32000	TI/德州仪器全新特价CD4023BM96即刻询购立享优惠#长期有货	询价
深圳市毅创辉电子科技有限公司	CD4023BPWR	TI	23+	14-TSSOP	15000	TI现货商!原装正品!	询价
深圳市佳鑫美电子科技有限公司	CD4023BM96	TI/德州仪器	25+	SOIC-14_150mil	4987	强势库存!绝对原装公司现货!	询价
深圳市壹芯创科技有限公司	CD4023	TI	24+	DIP14SOP14	130531	全新原装正品!现货库存!可开13点增值税发票	询价
深圳市卓越微芯电子有限公司	CD4023BM96	TI	25+	SOP	9500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市坤融电子科技有限公司	CD4023BF3A	TI/德州仪器	2025+	DIP	5000	原装进口价格优请找坤融电子!	询价
深圳市欧立现代科技有限公司	CD4023BE	TI	24+	DIP	15800	绝对原装现货,价格低,欢迎询购!	询价
深圳市创新迹电子有限公司	CD4023BM96	TI/德州仪器	2021+	SOP	9000	原装现货,随时欢迎询价	询价
深圳市华来深电子有限公司	CD4023BM96	TI	23+	SOP	12560	受权代理!全新原装现货特价热卖!	询价

CD4023芯片相关品牌

CD4023规格书下载地址

CD4023参数引脚图相关

CD4023数据表相关新闻

CD4017BM96
CD4017BM96
2024-5-6
CD4024BM96
CD4024BM96
2022-11-22
CD4024BM96
CD4024BM96 ，当天发货0755-82732291全新原装现货或门市自取.
2020-11-9
CD4023BE原厂原装正品现货
焕盛达竭诚为您提供一站式配套服务。当天下单，当天发货；
2020-10-2
CD4021BE 原装正品假一赔十
原厂很远现货很近坚持每一片芯片都来自原厂及授权渠道
2020-5-8
CD4019BCM，CD4019BCMX，CD4019BCN，CD4020BCN，CD40175BCN，CD40182BCN，CD40174BCN，CD40158CN，CD4044BCMX，CD4049UBCN，CD4051BCMTCX，CD4051BCMX，CD4051BCSJX，CD4052BCMX，CD4052BCSJ，
CD4019BCM，CD4019BCMX，CD4019BCN，CD4020BCN，CD40175BCN，CD40182BCN，CD40174BCN，CD40158CN，CD4044BCMX，CD4049UBCN，CD4051BCMTCX，CD4051BCMX，CD4051BCSJX，CD4052BCMX，CD4052BCSJ，
2019-12-18

DdatasheetPDF页码索引

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找IC，尽在114IC

CD4023价格

CD4023产品属性

CD4023供应商更多...

CD4023芯片相关品牌

CD4023规格书下载地址

CD4023参数引脚图相关

CD4023数据表相关新闻

CD4017BM96

CD4024BM96

CD4024BM96

CD4023BE原厂原装正品现货

CD4021BE 原装正品 假一赔十

CD4019BCM，CD4019BCMX，CD4019BCN，CD4020BCN，CD40175BCN，CD40182BCN，CD40174BCN，CD40158CN，CD4044BCMX，CD4049UBCN，CD4051BCMTCX，CD4051BCMX，CD4051BCSJX，CD4052BCMX，CD4052BCSJ，

DdatasheetPDF页码索引

CD4021BE 原装正品假一赔十