型号 功能描述 生产厂家 企业 LOGO 操作
MC14023BCP

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

Motorola

摩托罗拉

MC14023BCP

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

MC14023BCP

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

ONSEMI

安森美半导体

封装/外壳:14-DIP(0.300",7.62mm) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC GATE NAND 3CH 3-INP 14DIP 集成电路(IC) 门和反相器

ONSEMI

安森美半导体

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半导体

B-SUFFIX SERIES CMOS GATES

文件:134.49 Kbytes Page:12 Pages

ONSEMI

安森美半导体

Triple 3-input NAND Gate

Triple 3-input NAND Gate

HitachiHitachi Semiconductor

日立日立公司

SAW Filter Electrical Characteristic

文件:44.59 Kbytes Page:1 Pages

SIPAT

胜普电子

SAW Filter Electrical Characteristic

文件:65.88 Kbytes Page:1 Pages

SIPAT

胜普电子

替换型号 功能描述 生产厂家 企业 LOGO 操作

Buffered Triple 3-Input NAND,NOR Gate

NSC

国半

Buffered Triple 3-Input NAND Gate

Fairchild

仙童半导体

CMOS NAND Gates

Intersil

Buffered Triple 3-Input NAND,NOR Gate

NSC

国半

Buffered Triple 3-Input NAND Gate

Fairchild

仙童半导体

Buffered Triple 3-Input NAND,NOR Gate

NSC

国半

CMOS NAND GATES

TI

德州仪器

The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages

TI

德州仪器

The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages

TI

德州仪器

CMOS NAND GATES

TI

德州仪器

Buffered Triple 3-Input NAND,NOR Gate

NSC

国半

Triple 3-Input NAND(NOR) Gate

NSC

国半

Triple 3-input NAND Gate

HitachiHitachi Semiconductor

日立日立公司

Triple 3-input NAND gate

Philips

飞利浦

Triple 3-input NAND gate

Philips

飞利浦

B-Suffix Series CMOS Gates

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

Motorola

摩托罗拉

B-SUFFIX SERIES CMOS GATES

ONSEMI

安森美半导体

B−Suffix Series CMOS Gates

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

Motorola

摩托罗拉

COMPLEMENTARY METAL OXIDE SILICON

NTE

INPUT NAND GATE

RANDE

MC14023BCP产品属性

  • 类型

    描述

  • 型号

    MC14023BCP

  • 功能描述

    逻辑门 3-18V Triple 3-Input

  • RoHS

  • 制造商

    Texas Instruments

  • 产品

    OR

  • 逻辑系列

    LVC

  • 栅极数量

    2

  • 线路数量(输入/输出)

    2/1

  • 高电平输出电流

    - 16 mA

  • 低电平输出电流

    16 mA

  • 传播延迟时间

    3.8 ns

  • 电源电压-最大

    5.5 V

  • 电源电压-最小

    1.65 V

  • 最大工作温度

    + 125 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    DCU-8

  • 封装

    Reel

更新时间:2025-11-18 21:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOT
98+
DIP14
3300
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MOT
23+
NA
112
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73
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DIP14
12360
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MOT
25+
4
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ON
DIP-14
68500
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MOTOROLA
NEW
原厂封装
9526
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MOTOROLA/摩托罗拉
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DIP14
9800
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DIP14
3000
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ON
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DIP
7000
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