Hex Buffers (Non-Inverting)

General Description The CD4010C hex buffers are monolithic complementary MOS (CMOS) integrated circuits. The N- and P-channel enhancement mode transistors provide a symmetrical circuit with output swings essentially equal to the supply voltage. This results in high noise immunity over a wide su

CMOS HEX BUFFERS/CONVERTERS

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丝印代码：CD40102BE；CMOS 8-Stage Presettable Synchronous Down Counters

Features: . Synchronous or asynchronous preset . Medium-speed operation: fc = 3.6 MHz {typ.) @ Vpp = 10 V Cascadable 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18-V over full package-temperature range; 100 nA at 18 V and 25°C Noise margin (full pac

丝印代码：CD40102BE；CMOS 8-Stage Presettable Synchronous Down Counters

Features: . Synchronous or asynchronous preset . Medium-speed operation: fc = 3.6 MHz {typ.) @ Vpp = 10 V Cascadable 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18-V over full package-temperature range; 100 nA at 18 V and 25°C Noise margin (full pac

丝印代码：CD40102B；CMOS 8-Stage Presettable Synchronous Down Counters

Features: . Synchronous or asynchronous preset . Medium-speed operation: fc = 3.6 MHz {typ.) @ Vpp = 10 V Cascadable 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18-V over full package-temperature range; 100 nA at 18 V and 25°C Noise margin (full pac

丝印代码：CD40102B；CMOS 8-Stage Presettable Synchronous Down Counters

Features: . Synchronous or asynchronous preset . Medium-speed operation: fc = 3.6 MHz {typ.) @ Vpp = 10 V Cascadable 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18-V over full package-temperature range; 100 nA at 18 V and 25°C Noise margin (full pac

丝印代码：CD40103BE；CMOS 8-Stage Presettable Synchronous Down Counters

Features: . Synchronous or asynchronous preset . Medium-speed operation: fc = 3.6 MHz {typ.) @ Vpp = 10 V Cascadable 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18-V over full package-temperature range; 100 nA at 18 V and 25°C Noise margin (full pac

丝印代码：CD40103BE；CMOS 8-Stage Presettable Synchronous Down Counters

Features: . Synchronous or asynchronous preset . Medium-speed operation: fc = 3.6 MHz {typ.) @ Vpp = 10 V Cascadable 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18-V over full package-temperature range; 100 nA at 18 V and 25°C Noise margin (full pac

丝印代码：CD40103BE；CMOS 8-Stage Presettable Synchronous Down Counters

Features: . Synchronous or asynchronous preset . Medium-speed operation: fc = 3.6 MHz {typ.) @ Vpp = 10 V Cascadable 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18-V over full package-temperature range; 100 nA at 18 V and 25°C Noise margin (full pac

丝印代码：CD40103BF；CMOS 8-Stage Presettable Synchronous Down Counters

Features: . Synchronous or asynchronous preset . Medium-speed operation: fc = 3.6 MHz {typ.) @ Vpp = 10 V Cascadable 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18-V over full package-temperature range; 100 nA at 18 V and 25°C Noise margin (full pac

丝印代码：CD40103BF；CMOS 8-Stage Presettable Synchronous Down Counters

Features: . Synchronous or asynchronous preset . Medium-speed operation: fc = 3.6 MHz {typ.) @ Vpp = 10 V Cascadable 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18-V over full package-temperature range; 100 nA at 18 V and 25°C Noise margin (full pac

丝印代码：CD40103BF3A；CMOS 8-Stage Presettable Synchronous Down Counters

Features: . Synchronous or asynchronous preset . Medium-speed operation: fc = 3.6 MHz {typ.) @ Vpp = 10 V Cascadable 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18-V over full package-temperature range; 100 nA at 18 V and 25°C Noise margin (full pac

丝印代码：CD40103BF3A；CMOS 8-Stage Presettable Synchronous Down Counters

Features: . Synchronous or asynchronous preset . Medium-speed operation: fc = 3.6 MHz {typ.) @ Vpp = 10 V Cascadable 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18-V over full package-temperature range; 100 nA at 18 V and 25°C Noise margin (full pac

丝印代码：CD40103B；CMOS 8-Stage Presettable Synchronous Down Counters

Features: . Synchronous or asynchronous preset . Medium-speed operation: fc = 3.6 MHz {typ.) @ Vpp = 10 V Cascadable 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18-V over full package-temperature range; 100 nA at 18 V and 25°C Noise margin (full pac

丝印代码：CD40103B；CMOS 8-Stage Presettable Synchronous Down Counters

Features: . Synchronous or asynchronous preset . Medium-speed operation: fc = 3.6 MHz {typ.) @ Vpp = 10 V Cascadable 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18-V over full package-temperature range; 100 nA at 18 V and 25°C Noise margin (full pac

丝印代码：CD40105BE；CMOS FIFO Register

Features: # Independent asynchronous inputs and outputs ® 3state outputs ® Expandable in sither direction = Status indicators on input and output ® Reset capability ® Standardized, symmetrical output characteristics 100% tested for quiescent current at 20 / #5.V, 10-V, and 16-V parametri

丝印代码：CD40105BE；CMOS FIFO Register

Features: # Independent asynchronous inputs and outputs ® 3state outputs ® Expandable in sither direction = Status indicators on input and output ® Reset capability ® Standardized, symmetrical output characteristics 100% tested for quiescent current at 20 / #5.V, 10-V, and 16-V parametri

丝印代码：CD40105BF；CMOS FIFO Register

Features: # Independent asynchronous inputs and outputs ® 3state outputs ® Expandable in sither direction = Status indicators on input and output ® Reset capability ® Standardized, symmetrical output characteristics 100% tested for quiescent current at 20 / #5.V, 10-V, and 16-V parametri

丝印代码：CD40105BF；CMOS FIFO Register

Features: # Independent asynchronous inputs and outputs ® 3state outputs ® Expandable in sither direction = Status indicators on input and output ® Reset capability ® Standardized, symmetrical output characteristics 100% tested for quiescent current at 20 / #5.V, 10-V, and 16-V parametri

丝印代码：CD40105BF3A；CMOS FIFO Register

Features: # Independent asynchronous inputs and outputs ® 3state outputs ® Expandable in sither direction = Status indicators on input and output ® Reset capability ® Standardized, symmetrical output characteristics 100% tested for quiescent current at 20 / #5.V, 10-V, and 16-V parametri

丝印代码：CD40105BF3A；CMOS FIFO Register

Features: # Independent asynchronous inputs and outputs ® 3state outputs ® Expandable in sither direction = Status indicators on input and output ® Reset capability ® Standardized, symmetrical output characteristics 100% tested for quiescent current at 20 / #5.V, 10-V, and 16-V parametri

丝印代码：CD40106BE；CD40106B CMOS Hex Schmitt-Trigger Inverters

1 Features 1• Schmitt-Trigger Inputs • Hysteresis Voltage (Typical): – 0.9 V at VDD = 5 V – 2.3 V at VDD = 10 V – 3.5 V at VDD = 15 V • Noise Immunity Greater Than 50% • No Limit On Input Rise and Fall Times • Standardized, Symmetrical Output Characteristics • For Quiescent Current at

丝印代码：CD40106BE；CD40106B CMOS Hex Schmitt-Trigger Inverters

1 Features 1• Schmitt-Trigger Inputs • Hysteresis Voltage (Typical): – 0.9 V at VDD = 5 V – 2.3 V at VDD = 10 V – 3.5 V at VDD = 15 V • Noise Immunity Greater Than 50% • No Limit On Input Rise and Fall Times • Standardized, Symmetrical Output Characteristics • For Quiescent Current at

丝印代码：CD40106BE；CD40106B CMOS Hex Schmitt-Trigger Inverters

1 Features 1• Schmitt-Trigger Inputs • Hysteresis Voltage (Typical): – 0.9 V at VDD = 5 V – 2.3 V at VDD = 10 V – 3.5 V at VDD = 15 V • Noise Immunity Greater Than 50% • No Limit On Input Rise and Fall Times • Standardized, Symmetrical Output Characteristics • For Quiescent Current at

丝印代码：CD40106BF；CD40106B CMOS Hex Schmitt-Trigger Inverters

1 Features 1• Schmitt-Trigger Inputs • Hysteresis Voltage (Typical): – 0.9 V at VDD = 5 V – 2.3 V at VDD = 10 V – 3.5 V at VDD = 15 V • Noise Immunity Greater Than 50% • No Limit On Input Rise and Fall Times • Standardized, Symmetrical Output Characteristics • For Quiescent Current at

丝印代码：CD40106BF；CD40106B CMOS Hex Schmitt-Trigger Inverters

1 Features 1• Schmitt-Trigger Inputs • Hysteresis Voltage (Typical): – 0.9 V at VDD = 5 V – 2.3 V at VDD = 10 V – 3.5 V at VDD = 15 V • Noise Immunity Greater Than 50% • No Limit On Input Rise and Fall Times • Standardized, Symmetrical Output Characteristics • For Quiescent Current at

丝印代码：CD40106BF3A；CD40106B CMOS Hex Schmitt-Trigger Inverters

1 Features 1• Schmitt-Trigger Inputs • Hysteresis Voltage (Typical): – 0.9 V at VDD = 5 V – 2.3 V at VDD = 10 V – 3.5 V at VDD = 15 V • Noise Immunity Greater Than 50% • No Limit On Input Rise and Fall Times • Standardized, Symmetrical Output Characteristics • For Quiescent Current at

丝印代码：CD40106BF3A；CD40106B CMOS Hex Schmitt-Trigger Inverters

1 Features 1• Schmitt-Trigger Inputs • Hysteresis Voltage (Typical): – 0.9 V at VDD = 5 V – 2.3 V at VDD = 10 V – 3.5 V at VDD = 15 V • Noise Immunity Greater Than 50% • No Limit On Input Rise and Fall Times • Standardized, Symmetrical Output Characteristics • For Quiescent Current at

丝印代码：CD40106BM；CD40106B CMOS Hex Schmitt-Trigger Inverters

1 Features 1• Schmitt-Trigger Inputs • Hysteresis Voltage (Typical): – 0.9 V at VDD = 5 V – 2.3 V at VDD = 10 V – 3.5 V at VDD = 15 V • Noise Immunity Greater Than 50% • No Limit On Input Rise and Fall Times • Standardized, Symmetrical Output Characteristics • For Quiescent Current at

丝印代码：CD40106BM；CD40106B CMOS Hex Schmitt-Trigger Inverters

1 Features 1• Schmitt-Trigger Inputs • Hysteresis Voltage (Typical): – 0.9 V at VDD = 5 V – 2.3 V at VDD = 10 V – 3.5 V at VDD = 15 V • Noise Immunity Greater Than 50% • No Limit On Input Rise and Fall Times • Standardized, Symmetrical Output Characteristics • For Quiescent Current at

丝印代码：CD40106BM；CD40106B CMOS Hex Schmitt-Trigger Inverters

1 Features 1• Schmitt-Trigger Inputs • Hysteresis Voltage (Typical): – 0.9 V at VDD = 5 V – 2.3 V at VDD = 10 V – 3.5 V at VDD = 15 V • Noise Immunity Greater Than 50% • No Limit On Input Rise and Fall Times • Standardized, Symmetrical Output Characteristics • For Quiescent Current at

丝印代码：CD40106BM；CD40106B CMOS Hex Schmitt-Trigger Inverters

1 Features 1• Schmitt-Trigger Inputs • Hysteresis Voltage (Typical): – 0.9 V at VDD = 5 V – 2.3 V at VDD = 10 V – 3.5 V at VDD = 15 V • Noise Immunity Greater Than 50% • No Limit On Input Rise and Fall Times • Standardized, Symmetrical Output Characteristics • For Quiescent Current at

丝印代码：CD40106BM；CD40106B CMOS Hex Schmitt-Trigger Inverters

1 Features 1• Schmitt-Trigger Inputs • Hysteresis Voltage (Typical): – 0.9 V at VDD = 5 V – 2.3 V at VDD = 10 V – 3.5 V at VDD = 15 V • Noise Immunity Greater Than 50% • No Limit On Input Rise and Fall Times • Standardized, Symmetrical Output Characteristics • For Quiescent Current at

丝印代码：CD40106BM；CD40106B CMOS Hex Schmitt-Trigger Inverters

1 Features 1• Schmitt-Trigger Inputs • Hysteresis Voltage (Typical): – 0.9 V at VDD = 5 V – 2.3 V at VDD = 10 V – 3.5 V at VDD = 15 V • Noise Immunity Greater Than 50% • No Limit On Input Rise and Fall Times • Standardized, Symmetrical Output Characteristics • For Quiescent Current at

丝印代码：CD40106BM；CD40106B CMOS Hex Schmitt-Trigger Inverters

1 Features 1• Schmitt-Trigger Inputs • Hysteresis Voltage (Typical): – 0.9 V at VDD = 5 V – 2.3 V at VDD = 10 V – 3.5 V at VDD = 15 V • Noise Immunity Greater Than 50% • No Limit On Input Rise and Fall Times • Standardized, Symmetrical Output Characteristics • For Quiescent Current at

丝印代码：CD40106BM；CD40106B CMOS Hex Schmitt-Trigger Inverters

1 Features 1• Schmitt-Trigger Inputs • Hysteresis Voltage (Typical): – 0.9 V at VDD = 5 V – 2.3 V at VDD = 10 V – 3.5 V at VDD = 15 V • Noise Immunity Greater Than 50% • No Limit On Input Rise and Fall Times • Standardized, Symmetrical Output Characteristics • For Quiescent Current at

丝印代码：CD40106BM；CD40106B CMOS Hex Schmitt-Trigger Inverters

1 Features 1• Schmitt-Trigger Inputs • Hysteresis Voltage (Typical): – 0.9 V at VDD = 5 V – 2.3 V at VDD = 10 V – 3.5 V at VDD = 15 V • Noise Immunity Greater Than 50% • No Limit On Input Rise and Fall Times • Standardized, Symmetrical Output Characteristics • For Quiescent Current at

丝印代码：CD40106B；CD40106B CMOS Hex Schmitt-Trigger Inverters

1 Features 1• Schmitt-Trigger Inputs • Hysteresis Voltage (Typical): – 0.9 V at VDD = 5 V – 2.3 V at VDD = 10 V – 3.5 V at VDD = 15 V • Noise Immunity Greater Than 50% • No Limit On Input Rise and Fall Times • Standardized, Symmetrical Output Characteristics • For Quiescent Current at

丝印代码：CD40106B；CD40106B CMOS Hex Schmitt-Trigger Inverters

1 Features 1• Schmitt-Trigger Inputs • Hysteresis Voltage (Typical): – 0.9 V at VDD = 5 V – 2.3 V at VDD = 10 V – 3.5 V at VDD = 15 V • Noise Immunity Greater Than 50% • No Limit On Input Rise and Fall Times • Standardized, Symmetrical Output Characteristics • For Quiescent Current at

丝印代码：CD40107BE；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

丝印代码：CD40107BE；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

丝印代码：CD40107BF；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

丝印代码：CD40107BF；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

丝印代码：CD40107BF3A；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

丝印代码：CD40107BF3A；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

丝印代码：CD40109BE；CMOS Quad Low-to-High Voltage Level Shifter

Features: Independence of power supply sequence considerations—V cc can exceed Vp, input signals can exceed both Ve and Vpp Up and down level-shifting capability Three-state outputs with seperate enable controls Standardized, symmetrical output characteristics 100% tested for quiescent

丝印代码：CD40109BE；CMOS Quad Low-to-High Voltage Level Shifter

Features: Independence of power supply sequence considerations—V cc can exceed Vp, input signals can exceed both Ve and Vpp Up and down level-shifting capability Three-state outputs with seperate enable controls Standardized, symmetrical output characteristics 100% tested for quiescent

丝印代码：CD40109BF；CMOS Quad Low-to-High Voltage Level Shifter

Features: Independence of power supply sequence considerations—V cc can exceed Vp, input signals can exceed both Ve and Vpp Up and down level-shifting capability Three-state outputs with seperate enable controls Standardized, symmetrical output characteristics 100% tested for quiescent

丝印代码：CD40109BF；CMOS Quad Low-to-High Voltage Level Shifter

Features: Independence of power supply sequence considerations—V cc can exceed Vp, input signals can exceed both Ve and Vpp Up and down level-shifting capability Three-state outputs with seperate enable controls Standardized, symmetrical output characteristics 100% tested for quiescent

丝印代码：CD40109BF3A；CMOS Quad Low-to-High Voltage Level Shifter

Features: Independence of power supply sequence considerations—V cc can exceed Vp, input signals can exceed both Ve and Vpp Up and down level-shifting capability Three-state outputs with seperate enable controls Standardized, symmetrical output characteristics 100% tested for quiescent

丝印代码：CD40109BF3A；CMOS Quad Low-to-High Voltage Level Shifter

Features: Independence of power supply sequence considerations—V cc can exceed Vp, input signals can exceed both Ve and Vpp Up and down level-shifting capability Three-state outputs with seperate enable controls Standardized, symmetrical output characteristics 100% tested for quiescent

丝印代码：CD40109B；CMOS Quad Low-to-High Voltage Level Shifter

Features: Independence of power supply sequence considerations—V cc can exceed Vp, input signals can exceed both Ve and Vpp Up and down level-shifting capability Three-state outputs with seperate enable controls Standardized, symmetrical output characteristics 100% tested for quiescent

丝印代码：CD40109B；CMOS Quad Low-to-High Voltage Level Shifter

Features: Independence of power supply sequence considerations—V cc can exceed Vp, input signals can exceed both Ve and Vpp Up and down level-shifting capability Three-state outputs with seperate enable controls Standardized, symmetrical output characteristics 100% tested for quiescent

丝印代码：CD40109B；CMOS Quad Low-to-High Voltage Level Shifter

Features: Independence of power supply sequence considerations—V cc can exceed Vp, input signals can exceed both Ve and Vpp Up and down level-shifting capability Three-state outputs with seperate enable controls Standardized, symmetrical output characteristics 100% tested for quiescent

丝印代码：CD4010BE；CMOS Hex Buffers/Converters

Features: = 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C 5.V, 10-V, and 15-V parametric ratings

丝印代码：CD4010BE；CMOS Hex Buffers/Converters

Features: = 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C 5.V, 10-V, and 15-V parametric ratings

丝印代码：CD4010BF；CMOS Hex Buffers/Converters

Features: = 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C 5.V, 10-V, and 15-V parametric ratings

丝印代码：CD4010BF；CMOS Hex Buffers/Converters

Features: = 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C 5.V, 10-V, and 15-V parametric ratings

丝印代码：CD4010BF3A；CMOS Hex Buffers/Converters

Features: = 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C 5.V, 10-V, and 15-V parametric ratings

丝印代码：CD4010BF3A；CMOS Hex Buffers/Converters

Features: = 100% tested for quiescent current at 20 V Maximum input current of 1 uA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C 5.V, 10-V, and 15-V parametric ratings

32-STAGE STATIC LEFT/RIGHT SHIFT REGISTER