型号 功能描述 生产厂家 企业 LOGO 操作

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Genera

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)

Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery

IRF

INSULATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

更新时间:2025-10-22 11:26:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
99+
TO-220
110
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
三年内
1983
只做原装正品
INFINEON/英飞凌
24+
TO-220
1479
只做原厂渠道 可追溯货源
IR
2015+
TO-220AB
12500
全新原装,现货库存长期供应
Infineon Technologies
23+
原装
8000
只做原装现货
IR
23+
TO-220
50000
全新原装正品现货,支持订货
IR
24+
TO-220AB
8866
ir
24+
N/A
6980
原装现货,可开13%税票
IR
24+
TO-220AB
27500
原装正品,价格最低!
IR
23+
TO-220
4500
原装正品假一罚百!可开增票!

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