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位置：首页 > IC中文资料 > BUZ90

型号 功能描述 生产厂家 企业 LOGO 操作
BUZ90

SIPMOS® Power Transistor

• N channel\n• Enhancement mode\n• Avalanche-rated

INFINEON

英飞凌

BUZ90

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

• N channel • Enhancement mode • Avalanche-rated

SIEMENS

西门子

BUZ90

Easy driver for cost effective application

文件：65.64 Kbytes Page：2 Pages

ISC

无锡固电

BUZ900

N-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE AS BUZ905 &

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ900

BUZ900 - 晶体管, MOSFET, N沟道, 8 A, 160 V, 1.5 ohm, 1.5 V

The BUZ900 is a 160V N-channel Power MOSFET for audio applications. It features integral protection diode and enhancement mode. ·High speed switching\n·Semefab designed and diffused\n·High voltage\n·High energy rating\n·±14V Gate to source voltage\n·8A Body drain diode current\n·1°C/W Thermal resistance, junction to case;

TTELEC

BUZ900DP

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 16A@ TC=25℃ · Drain Source Voltage -VDSS= 160V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

BUZ900DP

N-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE AS BUZ905DP &am

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ900X4S

NEW PRODUCT UNDER DEVELOPMENT

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ901

N-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE AS BUZ905 &

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ901DP

N-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE AS BUZ905DP &am

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ901P

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=8A@ TC=25℃ · Drain Source Voltage -VDSS=200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

BUZ901X4S

NEW PRODUCT UNDER DEVELOPMENT

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ902

N CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY P–CHANNEL BUZ907P & BUZ908P

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ902P

N CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY P–CHANNEL BUZ907P & BUZ908P

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ903P

N CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY P–CHANNEL BUZ907P & BUZ908P

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ905

NEW PRODUCT UNDER DEVELOPMENT

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900 &

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ905DP

P-CHANNEL POWER MOSFET FOR AUDIO APPLICATIONS

[MAGNATEC] POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900DP & B

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ905DP

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -16A@ TC=25℃ · Drain Source Voltage -VDSS= -160V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

BUZ905P

P-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900P &

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ905X4S

NEW PRODUCT UNDER DEVELOPMENT

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900 &

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ906DP

P-CHANNEL POWER MOSFET FOR AUDIO APPLICATIONS

[MAGNATEC] POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900DP & B

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ906P

P-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900P &

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ906P

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -8A@ TC=25℃ · Drain Source Voltage -VDSS= -200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

BUZ906X4S

NEW PRODUCT UNDER DEVELOPMENT

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N–CHANNEL ALSO AVAILABLE AS BUZ900 &

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ907

POWER MOSFETS FOR AUDIO APPLICATIONS

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY N–CHANNEL BUZ902 & BUZ903

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ907D

P-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY N–CHANNEL BUZ902D & BUZ903D

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ907P

POWER MOSFETS FOR AUDIO APPLICATIONS

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY N–CHANNEL BUZ902P & BUZ903P

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ908

POWER MOSFETS FOR AUDIO APPLICATIONS

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY N–CHANNEL BUZ902 & BUZ903

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ908D

P-CHANNEL POWER MOSFET

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY N–CHANNEL BUZ902D & BUZ903D

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ908P

POWER MOSFETS FOR AUDIO APPLICATIONS

POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (220V & 250V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODES • COMPLIMENTARY N–CHANNEL BUZ902P & BUZ903P

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ90A

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 4.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

ISC

无锡固电

BUZ90A

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

• N channel • Enhancement mode • Avalanche-rated

SIEMENS

西门子

BUZ900

N-channel power MOSFET for audio applications, 160V

Magnatec

BUZ900

N-CHANNEL POWER MOSFET

文件：82.31 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BUZ900P

N?밅HANNEL POWER MOSFET

文件：43.7 Kbytes Page：4 Pages

SEME-LAB

BUZ901

N-CHANNEL POWER MOSFET

文件：82.31 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BUZ901

N-channel power mosfet

文件：184.95 Kbytes Page：4 Pages

ELEFLOW

BUZ901D

isc N-Channel MOSFET Transistor

文件：277.57 Kbytes Page：2 Pages

ISC

无锡固电

BUZ90A

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

BUZ90产品属性

  • 类型

    描述

  • Minimum Operating Temperature：

    -55°C

  • Maximum Power Dissipation：

    125000mW

  • Maximum Operating Temperature：

    150°C

  • Maximum Gate Source Voltage：

    ±14V

  • Maximum Drain Source Voltage：

    160V

  • Maximum Continuous Drain Current：

    8A

  • Configuration：

    Single

  • Channel Type：

    N

  • Channel Mode：

    Enhancement

  • Category：

    Power MOSFET

BUZ90供应商更多...

更新时间：2026-7-31 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
上海意淼电子科技有限公司
BUZ90-E3045A
FUJITSU
23+
DIP
12000
全新原装假一赔十
询价
深圳市纳艾斯科技有限公司
BUZ90
INFINEO
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
中天科工半导体（深圳）有限公司
BUZ90A
INFINEON丨英飞凌
20+
TO-220
38900
原装优势主营型号-可开原型号增税票
询价
深圳市科芯源微电子有限公司
BUZ90
SIEMENS/西门子
2026+
TO220
54648
百分百原装现货 实单必成 欢迎询价
询价
深圳市旺财半导体有限公司
BUZ90A
25+
66880
原装正品，欢迎询价
询价
贸泽芯城（深圳）电子科技有限公司
BUZ90A
SHINDENGEN/新电元
23+
TO-220
30100
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
深圳市科恒伟业电子有限公司
BUZ90
SIEMENS/西门子
2540+
TO-220
8595
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市安富世纪电子有限公司
BUZ90A
INF
23+
TO-220
50000
全新原装正品现货,支持订货
询价
深圳市富芯乐电子科技有限公司
BUZ90
SIEMENS
24+
TO-220
10000
只做原装正品现货 欢迎来电查询15919825718
询价
深圳市芯球通科技有限公司
BUZ90
Infineon(英飞凌)
23+
19850
原装正品,假一赔十
询价

BUZ90芯片相关品牌

BUZ90规格书下载地址

BUZ90参数引脚图相关

BUZ90数据表相关新闻

DdatasheetPDF页码索引

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